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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD22N08S2L50ATMA1

Name: IPD22N08S2L50ATMA1
Brand: Infineon Technologies
SKU: IPD22N08S2L50ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD22N08S2L50ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD22N08S2L50ATMA1.pdf

Description:: MOSFET N-CH 75V 27A TO252-3

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Product details

Overview

IPD22N08S2L50ATMA1 from Infineon Technologies is an N-channel logic-level OptiMOS® power MOSFET designed for high-efficiency DC-DC conversion and automotive load switching. It features 75 V V_DS, 50 mΩ R_DS(on) at V_GS = 10 V, 25 A continuous drain current, AEC-Q101 qualification, and PG-TO252-3-11 surface-mount package.

For engineers reviewing the IPD22N08S2L50ATMA1 datasheet, IPD22N08S2L50ATMA1 pinout, IPD22N08S2L50ATMA1 application, or IPD22N08S2L50ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), ultra-low conduction loss, 100% avalanche ruggedness, and thermal performance in automotive under-hood environments.

Technical Context

This MOSFET employs Infineon's second-generation OptiMOS® trench technology optimized for low R_DS(on) × Q_g figure-of-merit and fast switching with controlled EMI. Its gate threshold voltage (1.2–2.0 V) ensures reliable turn-on with 3.3 V or 5 V logic controllers without level-shifting.

The integrated body diode supports synchronous rectification and freewheeling in buck converters and motor drives, with t_rr = 44 ns and Q_rr = 66 nC at T_j = 25 °C - enabling efficient hard-switched topologies up to 200 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - supports 48 V automotive systems and industrial 24/48 V rails with 25 % voltage margin
R_DS(on) max	50 mΩ @ V_GS = 10 V - enables ≤1.25 W conduction loss at 5 A, critical for thermally constrained PCB layouts
I_D cont	25 A @ T_C = 25 °C - rated for sustained high-current loads in engine control units and battery disconnects
E_AS	94 mJ - guarantees single-pulse avalanche robustness during inductive load switching transients
Q_g	21–33 nC - balances switching speed and gate driver power requirements in 100–200 kHz SMPS designs
t_r/t_f	20 ns / 10 ns - minimizes switching transition losses while maintaining EMI control via moderate dV/dt
T_j max	+175 °C - qualified for under-hood automotive applications including transmission control and ADAS power stages

Pinout & Package

IPD22N08S2L50ATMA1 uses the PG-TO252-3-11 (DPAK) thermally enhanced surface-mount package with exposed drain pad for low R_thJC = 2 K/W. The three terminals are arranged in standard DPAK orientation: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Logic-level compatible input requiring ≤2.0 V threshold; connects to MCU GPIO or dedicated gate driver
Pin 2 (Drain)	High-side power terminal	Exposed copper tab - must be soldered to ≥6 cm² PCB copper pour for thermal management per datasheet layout guidelines
Pin 3 (Source)	Reference node	Common return path for gate drive and load current; ties to ground or low-side switch source in half-bridge configurations

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling
MSL1 rating	Compatible with lead-free reflow profiles up to 260 °C peak - eliminates moisture sensitivity concerns in high-volume SMT assembly
Ultra-low R_DS(on)	38.5 mΩ typ. @ V_GS = 10 V - reduces I²R losses by >30 % vs. legacy 60 V MOSFETs in 12 V starter-generator systems
100 % avalanche tested	Each unit subjected to single-pulse E_AS stress - ensures field reliability in inductive load switching without external snubbers
Green package	Lead-free and RoHS-compliant construction - meets EU ELV Directive and global automotive environmental compliance mandates

Applications

Automotive Engine Control Unit (ECU)

Industrial 48 V DC-DC Converter

Use Scenario: High-side switch for fuel injector drivers and solenoid actuation in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Power switch controlling 12–24 V inductive loads with precise PWM timing and fast turn-off to limit back-EMF energy.

Use Value: 44 ns reverse recovery time and 66 nC Q_rr minimize cross-conduction loss and diode commutation stress during high-frequency injection cycles.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 200 kHz with zero-voltage switching (ZVS) assist.

Use Value: 50 mΩ R_DS(on) and 2 K/W R_thJC enable >97 % efficiency at 25 A output while maintaining <90 °C junction temperature on 6 cm² PCB copper.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) Precharge Circuit

Use Scenario: Half-bridge high-side switch in 3-phase inverter driving 24 V brushless EPS motors.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 25 A peak phase current with short-circuit protection response.

Use Value: 94 mJ avalanche energy rating allows safe clamping of motor phase inductance flyback during fault conditions without external TVS.

Use Scenario: Precharge MOSFET limiting inrush current into OBC DC-link capacitors during AC-to-DC startup.

IC Role / Device Role / Timing Role: Controlled soft-start switch activated before main relay closure, rated for repeated 100 A pulsed current.

Use Value: 108 A pulsed drain current rating and 175 °C operation ensure reliability across 10,000+ precharge cycles in EV charging duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DS, 3.5 mΩ R_DS(on) @ 10 V, DFN5x6 package, no AEC-Q101	Limited to 24–48 V non-automotive systems; lower R_DS(on) but higher gate charge (42 nC)	Prefer for space-constrained industrial SMPS where voltage margin is sufficient and automotive qualification is not required.
IRF3205PBF	55 V V_DS, 8 mΩ R_DS(on) @ 10 V, TO-220 package, no AEC-Q101 or MSL1	Requires through-hole assembly; lacks automotive qualification and high-temp capability (T_j max = 175 °C not validated)	Acceptable for cost-sensitive prototyping or legacy 12 V industrial controls where reflow compatibility and AEC compliance are unnecessary.

Compared with STL220N6F7 and IRF3205PBF, IPD22N08S2L50ATMA1 uniquely combines AEC-Q101 qualification, 75 V rating, MSL1 reflow support, and 175 °C operation - making it the only option qualified for production automotive power stages requiring both voltage headroom and thermal resilience.

Availability

IPD22N08S2L50ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, industrial 48 V DC-DC converters, and electric power steering motor drivers requiring stable component supply and long-term lifecycle assurance.

Supply support for IPD22N08S2L50ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive powertrain and industrial power conversion systems.

FAQ

What is the maximum gate-source voltage rating for IPD22N08S2L50ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable logic-level drive, keep V_GS between 4.5 V and 15 V - the plateau voltage is 3.9 V, and full enhancement occurs above 5 V per datasheet transfer characteristics.

Does IPD22N08S2L50ATMA1 require a gate resistor in automotive applications?

Yes - a series gate resistor (typically 5–22 Ω) is required to dampen ringing, control dV/dt, and prevent shoot-through in bridge configurations. The 21–33 nC total gate charge and 9.1 Ω test condition in the datasheet confirm that gate drive strength must be matched to switching frequency and layout parasitics.

Can IPD22N08S2L50ATMA1 replace IRFZ44N in existing designs?

No - IRFZ44N has 55 V V_DS and 28 mΩ R_DS(on), while IPD22N08S2L50ATMA1 offers 75 V rating and 50 mΩ R_DS(on). Though pin-compatible in TO-220, the PG-TO252-3-11 package requires PCB redesign. Also, its lower gate threshold (1.6 V typ.) may cause unintended turn-on if driven by marginal 5 V sources.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the diode supports 25 A continuous forward current at T_C = 25 °C and exhibits 0.9–1.3 V forward voltage at 22 A. However, its 44 ns t_rr and 66 nC Q_rr make it appropriate for ≤200 kHz operation; for >300 kHz, a discrete Schottky or GaN FET is recommended to reduce recovery losses.

IPD22N08S2L50ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 31µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 630 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD22N08S2L50ATMA1 FAQ

1.How can I place an order for IPD22N08S2L50ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD22N08S2L50ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD22N08S2L50ATMA1 reliable?

The price and inventory of IPD22N08S2L50ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD22N08S2L50ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD22N08S2L50ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD22N08S2L50ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD22N08S2L50ATMA1?

IPD22N08S2L50ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD22N08S2L50ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD22N08S2L50ATMA1?

For technical support, including IPD22N08S2L50ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD22N08S2L50ATMA1 requirements.

6.How does Aetrix verify that IPD22N08S2L50ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD22N08S2L50ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD22N08S2L50ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD22N08S2L50ATMA1?

All IPD22N08S2L50ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD22N08S2L50ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD22N08S2L50ATMA1 part is unused and in its original packaging.

Return procedure for IPD22N08S2L50ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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