Infineon Technologies IPD25CN10NGATMA1

Overview

IPD25CN10NGATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 (DPAK) package, rated for 100 V V_DS, 35 A continuous drain current at T_C = 25 °C, and 25 mΩ max R_DS(on) at V_GS = 10 V. It features 175 °C maximum junction temperature, halogen-free construction per IEC61249-2-21, and is optimized for high-frequency switching in DC-DC converters and synchronous rectification in server power supplies.

For engineers reviewing the IPD25CN10NGATMA1 datasheet, IPD25CN10NGATMA1 pinout, IPD25CN10NGATMA1 application, or IPD25CN10NGATMA1 equivalent, key selection criteria include its 19–25 mΩ typical-to-max R_DS(on), 23–31 nC total gate charge, 1560–2070 pF input capacitance, and validated 6 kV/µs dv/dt ruggedness under hard-switching conditions.

Technical Context

This OptiMOS™2 device uses planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low gate charge × R_DS(on) figure-of-merit (FOM), enabling efficient operation above 300 kHz in buck converters. Its 1.1 Ω gate resistance and 5.6 V gate plateau voltage support predictable turn-on timing with standard 1.6 Ω external gate resistors.

The integrated body diode exhibits 85 ns reverse recovery time and 165 nC Q_rr at I_F = 35 A, di_F/dt = 100 A/µs, making it suitable for synchronous rectification where diode conduction loss and EMI from reverse recovery must be minimized.

Key Specifications

Pinout & Package

IPD25CN10NGATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain pad on underside for thermal conduction. The package measures 6.5 mm × 6.2 mm × 2.3 mm and requires minimum 6 cm² copper area on FR4 PCB for specified R_thJC = 2.1 K/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB26CN10NG and IPP26CN10NG, IPD25CN10NGATMA1 offers identical electrical performance in a surface-mount DPAK package optimized for automated assembly and moderate-power density, with thermal performance balanced between TO252's compactness and TO263's enhanced cooling.

Availability

IPD25CN10NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IPD25CN10NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™2 family, designed specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial power supplies where low R_DS(on) and controlled gate charge are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D for IPD25CN10NGATMA1 is 25 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO252-3 package with standard PCB copper area, and must be applied in thermal design calculations alongside R_thJC = 2.1 K/W.

Does this MOSFET require a gate resistor for safe operation?

Yes - a series gate resistor (typically 1.6 Ω) is recommended to control dV/dt and limit peak gate current during switching. The device's 1.1 Ω internal gate resistance and 31 nC total gate charge make external resistance essential to prevent ringing and overshoot, especially in half-bridge configurations with fast drivers.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode has 85 ns reverse recovery time and 165 nC Q_rr at I_F = 35 A, enabling reliable synchronous rectification in buck and LLC topologies up to 500 kHz. Its soft recovery characteristic reduces EMI compared to standard fast-recovery diodes.

What is the thermal resistance from junction to ambient under standard conditions?

Under standard test conditions (40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area for drain connection, vertical orientation in still air), R_thJA is 40 K/W for IPD25CN10NGATMA1. This value assumes minimal footprint layout; adding thermal vias or larger copper can improve it to ~30 K/W in optimized designs.