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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD25N06S240ATMA2

Name: IPD25N06S240ATMA2
Brand: Infineon Technologies
SKU: IPD25N06S240ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD25N06S240ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD25N06S240ATMA2.pdf

Description:: MOSFET N-CH 55V 29A TO252-31

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Product details

Overview

IPD25N06S240ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET with 55 V V_DS, 40 mΩ max R_DS(on) at V_GS = 10 V and I_D = 13 A, 175 °C maximum junction temperature, and AEC-Q101 qualification-used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPD25N06S240ATMA2 datasheet, IPD25N06S240ATMA2 pinout, IPD25N06S240ATMA2 application, or IPD25N06S240ATMA2 equivalent, key selection criteria include ultra-low conduction loss (28.6–40 mΩ), 100% avalanche ruggedness (80 mJ), thermal resistance R_thJC = 2.2 K/W, and SMD-compatible PG-TO252-3-11 package for automotive power switching.

Technical Context

This OptiMOS® device employs trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit (14–18 nC total gate charge) and fast switching (t_r = 20 ns, t_f = 19 ns). Its integrated body diode features low V_SD = 0.9–1.3 V and t_rr = 31 ns, enabling efficient synchronous rectification and freewheeling in hard-switched topologies.

The MOSFET operates across –55 °C to +175 °C, with gate threshold voltage V_GS(th) tightly specified at 2.1–4.0 V and stable over temperature. It supports 100% unclamped inductive switching (UIS) stress testing per JEDEC JESD24-11, confirming robustness in automotive load-dump and inductive kick scenarios.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-source blocking voltage for 12 V/24 V automotive battery rail applications
R_DS(on) max	40 mΩ at V_GS = 10 V, I_D = 13 A - Enables ≤1.3 W conduction loss at 25 A continuous current
I_D cont	29 A at T_C = 25 °C - Supports high-current motor gate drivers and solenoid drivers without forced cooling
E_AS	80 mJ - Confirmed single-pulse avalanche energy rating ensures reliability under inductive turn-off stress
R_thJC	2.2 K/W - Low junction-to-case thermal resistance enables direct heatsink mounting for thermal management
Q_g total	14.0–18.0 nC - Optimized gate drive energy for 100–500 kHz switching in buck and half-bridge converters
V_GS(th)	2.1–4.0 V - Compatible with standard 3.3 V/5 V logic-level gate drivers while avoiding spurious turn-on
t_r/t_f	20 ns / 19 ns - Fast edge rates reduce switching losses and EMI in high-frequency power stages

Pinout & Package

IPD25N06S240ATMA2 uses the PG-TO252-3-11 surface-mount package (also known as D-Pak), featuring a thermally enhanced exposed drain pad for low R_thJC and mechanical stability on PCBs. The three terminals are arranged in standard TO252 footprint with pin 1 (Gate), pin 2 (Drain), and pin 3 (Source).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal accepting 0–10 V logic signal; requires <20 Ω series gate resistor to damp ringing
Pin 2 (D)	Drain	Main high-side or low-side power path connection; electrically tied to exposed copper pad for thermal conduction
Pin 3 (S)	Source	Reference node for gate drive and current sensing; connects to ground or floating return in half-bridge configurations

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood environments including thermal cycling, humidity, and vibration per ISO/TS 16949
100% UIS tested	Each unit subjected to unclamped inductive switching stress up to 80 mJ, ensuring field reliability
Green package	Lead-free, halogen-free PG-TO252-3-11 compliant with RoHS Directive 2011/65/EU and ELV requirements
Ultra-low R_DS(on)	28.6 mΩ typical at 25 °C enables >96% efficiency in 12 V input buck converters at 20 A output
High T_j rating	175 °C maximum operating junction temperature allows operation in engine bay ambient up to 125 °C

Applications

Engine Control Unit (ECU) Power Stage

Automotive DC-DC Converter

Use Scenario: Switching high-current fuel injector or ignition coil drivers in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Low-side switch controlling inductive loads with precise PWM timing and fast turn-off to prevent back-EMF damage.

Use Value: 80 mJ avalanche rating absorbs inductive energy without external snubbers; 40 mΩ R_DS(on) minimizes heat generation during 10–20 ms pulse bursts.

Use Scenario: High-efficiency 12 V to 5 V/3.3 V step-down conversion for infotainment and ADAS modules.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in buck converter secondary side, replacing Schottky diode to reduce conduction loss.

Use Value: V_SD = 0.9–1.3 V and t_rr = 31 ns enable >2 % efficiency gain vs. diode solution at 5 A load; 2.2 K/W R_thJC supports compact heatsinking.

Electric Power Steering (EPS) Motor Driver

Automotive HVAC Blower Control

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor (24 V system).

IC Role / Device Role / Timing Role: High-speed switching element handling 30 A peak phase current with <20 ns rise/fall times to minimize dead-time losses.

Use Value: Q_g = 14–18 nC reduces gate driver power demand; 175 °C T_j rating sustains operation during sustained torque assist events.

Use Scenario: PWM-controlled blower motor driver in climate control systems (12 V nominal).

IC Role / Device Role / Timing Role: Low-side power switch modulating motor speed via variable duty-cycle gate drive.

Use Value: 29 A continuous current rating supports 300 W fan loads; AEC-Q101 qualification ensures long-term reliability in cabin temperature cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF8AG	60 V V_DS, 3.2 mΩ typ R_DS(on) at 10 V, but only rated to 150 °C T_j	Higher current density but lower thermal margin; not AEC-Q101 certified	Prefer for non-automotive industrial 60 V systems where thermal headroom exceeds 25 °C
IRF3205PbF	55 V V_DS, 8.0 mΩ R_DS(on), TO-220 package, no AEC-Q101 or avalanche testing	Through-hole mounting; lacks automotive qualification and 175 °C rating	Acceptable for cost-sensitive 12 V consumer-grade power supplies with derated current

Compared with STL220N6LF8AG and IRF3205PbF, IPD25N06S240ATMA2 uniquely combines AEC-Q101 compliance, 175 °C operation, 100% UIS testing, and SMD PG-TO252 packaging-making it the only option qualified for under-hood automotive switching where thermal and reliability constraints are strictest.

Availability

IPD25N06S240ATMA2 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering inverters, HVAC blower drivers, and ADAS domain controllers requiring stable component supply across extended product lifecycles.

Supply support for IPD25N06S240ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation automotive power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in engine bay and chassis control applications.

FAQ

What is the maximum allowable gate-source voltage for IPD25N06S240ATMA2?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable switching, gate drive should be limited to 10–12 V for full enhancement and kept below 15 V during transients, with appropriate clamping if using bootstrap or isolated gate drivers.

Does IPD25N06S240ATMA2 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic parasitic body diode with continuous forward current rating of 29 A and pulsed current capability of 116 A. Key parameters include forward voltage V_SD = 0.9–1.3 V at I_F = 25 A and T_j = 25 °C, reverse recovery time t_rr = 31 ns, and reverse recovery charge Q_rr = 40 nC-critical for evaluating freewheeling losses in synchronous rectifiers.

Can IPD25N06S240ATMA2 be used in a high-side configuration with 12 V supply?

Yes, it can operate as a high-side switch when paired with a gate driver capable of providing ≥10 V above the source potential (e.g., bootstrap or isolated driver). Its V_GS(th) range (2.1–4.0 V) and 55 V V_DS rating make it suitable for 12 V automotive high-side loads, provided gate drive voltage swing and layout minimize Miller-induced shoot-through.

Is thermal derating required when operating IPD25N06S240ATMA2 at elevated ambient temperatures?

Yes-continuous drain current must be derated linearly above T_C = 25 °C. At T_C = 100 °C, I_D drops to 21 A (per datasheet), and power dissipation falls to ~25 W. Thermal design must account for R_thJC = 2.2 K/W and PCB copper area; for 125 °C ambient, a minimum 6 cm² 70 µm copper pour is recommended to maintain T_j ≤ 175 °C.

IPD25N06S240ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 4V @ 26µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 513 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD25N06S240ATMA2 FAQ

1.How can I place an order for IPD25N06S240ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD25N06S240ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD25N06S240ATMA2 reliable?

The price and inventory of IPD25N06S240ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD25N06S240ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD25N06S240ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD25N06S240ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD25N06S240ATMA2?

IPD25N06S240ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD25N06S240ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD25N06S240ATMA2?

For technical support, including IPD25N06S240ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD25N06S240ATMA2 requirements.

6.How does Aetrix verify that IPD25N06S240ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD25N06S240ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD25N06S240ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD25N06S240ATMA2?

All IPD25N06S240ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD25N06S240ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD25N06S240ATMA2 part is unused and in its original packaging.

Return procedure for IPD25N06S240ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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