Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD30N06S215ATMA2

Name: IPD30N06S215ATMA2
Brand: Infineon Technologies
SKU: IPD30N06S215ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD30N06S215ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD30N06S215ATMA2.pdf

Description:: MOSFET N-CH 55V 30A TO252-31

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,559

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD30N06S215ATMA2 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO252-3-11 package, rated for 55 V V_DS, 30 A continuous drain current at T_C = 25 °C, and ultra-low 14.7 mΩ R_DS(on) max at V_GS = 10 V. It operates up to 175 °C, passes 100% single-pulse avalanche testing (240 mJ), and is used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPD30N06S215ATMA2 datasheet, IPD30N06S215ATMA2 pinout, IPD30N06S215ATMA2 application, or IPD30N06S215ATMA2 equivalent, key selection criteria include its AEC-Q101 qualification, 1.1 K/W junction-to-case thermal resistance, integrated body diode with 45 ns t_rr, and SMD-compatible lead-free PG-TO252 footprint for automotive power switching.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.1 V gate plateau voltage supports stable Miller region control during hard-switching.

The integrated body diode exhibits 1.3 V forward voltage at 30 A and 25 °C, with 78 nC Q_rr and soft recovery behavior-critical for reducing EMI in synchronous rectification and H-bridge motor drives where reverse recovery stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 42 V automotive supply rails and transient clamping requirements.
R_DS(on) max	14.7 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1 W conduction loss at 30 A, supporting compact thermal design.
E_AS	240 mJ - Confirmed single-pulse avalanche energy rating ensures ruggedness against inductive load turn-off spikes.
t_r/t_f	28 ns / 19 ns - Fast switching transitions reduce overlap loss in high-frequency PWM applications (e.g., >100 kHz DC-DC).
Q_g	110 nC max - Defines gate drive power requirement; compatible with standard 1 A peak gate drivers.
T_j max	175 °C - Supports operation in under-hood environments without derating in most mounting configurations.
R_thJC	1.1 K/W - Enables direct heatsink mounting for high-power dissipation (e.g., 136 W at T_C = 25 °C).

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, lead-free, MSL1 rated to 260 °C peak reflow. Exposed drain pad provides low-inductance, high-current path and thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense resistor; carries full load current.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires <110 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output	Exposed metal pad on underside - primary thermal and current path; must be soldered to ≥6 cm² copper pour.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including temperature cycling, HTRB, and UHAST.
Ultra-low R_DS(on)	11.3 mΩ typical at 10 V gate drive - reduces I²R losses by >30% vs. legacy 30 A MOSFETs in same package.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress - guarantees minimum 240 mJ ruggedness without screening fallout.
Integrated body diode	Soft-recovery t_rr = 45 ns, Q_rr = 78 nC - minimizes voltage overshoot and ringing in freewheeling paths.
Thermal robustness	R_thJC = 1.1 K/W - allows 69 A chip-limited current at 25 °C case temperature when properly heatsinked.

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 30 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization; handles inductive kickback via avalanche capability.

Use Value: 240 mJ E_AS rating eliminates need for external snubbers; 14.7 mΩ R_DS(on) limits self-heating during repetitive pulsing.

Use Scenario: PWM-controlled 24 V blower motor in climate control systems, operating continuously at 25 A.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in 20–50 kHz inverter stage; conducts continuous current with minimal conduction loss.

Use Value: 175 °C T_j max and 1.1 K/W R_thJC enable reliable operation in confined under-dash enclosures without active cooling.

12 V–48 V Automotive DC-DC Converter

Electric Power Steering (EPS) Phase Leg

Use Scenario: Synchronous rectifier in 300 kHz buck converter stepping 48 V battery down to 12 V for infotainment systems.

IC Role / Device Role / Timing Role: Secondary-side power switch; body diode conducts during dead time; MOSFET conducts during active PWM phase.

Use Value: 45 ns t_rr and soft recovery reduce switching loss and EMI; 110 nC Q_g supports efficient gate driving at high frequency.

Use Scenario: High-current phase leg switch in 3-phase EPS inverter delivering up to 30 A RMS per phase.

IC Role / Device Role / Timing Role: Low-side switch in three half-bridges; commutates motor current with precise timing and low loss.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; 14.7 mΩ R_DS(on) minimizes heat generation during assist torque peaks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL30DN6LF7AG	R_DS(on) = 15.5 mΩ max; 60 V V_DS; same PG-TO252 package; Q_g = 95 nC max	Slightly higher conduction loss; lower gate charge reduces driver stress	Preferable where gate drive capability is limited but thermal margin exists.
IRF3710PBF	R_DS(on) = 28 mΩ max; 100 V V_DS; TO-220 package; non-automotive grade	Higher R_DS(on) doubles conduction loss; through-hole mounting increases assembly cost	Only suitable for non-automotive industrial prototypes lacking AEC-Q101 or thermal constraints.

Compared with STL30DN6LF7AG and IRF3710PBF, IPD30N06S215ATMA2 delivers superior thermal performance (1.1 K/W vs. ~2.5 K/W for TO-220), guaranteed avalanche ruggedness, and automotive qualification-making it the only viable choice for production-grade engine bay applications requiring long-term reliability.

Availability

IPD30N06S215ATMA2 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and electronic fuel injection systems requiring stable component supply across extended vehicle lifecycles.

Supply support for IPD30N06S215ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS® 2nd generation automotive power MOSFET product line, engineered specifically for high-current, high-temperature switching in 12 V and 42 V vehicle electrical architectures.

FAQ

Is IPD30N06S215ATMA2 pin-compatible with earlier IPD30N06S2 versions?

Yes, IPD30N06S215ATMA2 maintains identical PG-TO252-3-11 pinout and mechanical footprint as prior revisions of the IPD30N06S2 series. Electrical specifications-including R_DS(on), Q_g, and E_AS-are consistent with Rev. 1.0 datasheet, and no layout changes are required for drop-in replacement in existing designs.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² copper area (single layer, 70 µm thick) on FR4 PCB for the drain pad. This configuration achieves R_thJA = 50 K/W. Smaller areas increase thermal resistance linearly; using less than 2 cm² raises R_thJA above 75 K/W and risks exceeding T_j limits at full load.

Does this MOSFET require a gate resistor for automotive applications?

A gate resistor (typically 5–15 Ω) is recommended to dampen gate oscillation and limit peak gate current during fast switching. With 110 nC total gate charge and typical 12 V gate drive, a 10 Ω resistor limits dV/dt to safe levels and prevents shoot-through in half-bridge configurations common in EPS and HVAC inverters.

Can IPD30N06S215ATMA2 be used in synchronous rectification without external diode?

Yes-the integrated body diode has characterized soft recovery (t_rr = 45 ns, Q_rr = 78 nC) and is rated for 30 A continuous forward current. In synchronous buck topologies operating below 500 kHz, it can serve as the freewheeling path during dead time, eliminating discrete diode cost and footprint while maintaining efficiency.

IPD30N06S215ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1485 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD30N06S215ATMA2 FAQ

1.How can I place an order for IPD30N06S215ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD30N06S215ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD30N06S215ATMA2 reliable?

The price and inventory of IPD30N06S215ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD30N06S215ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD30N06S215ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD30N06S215ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD30N06S215ATMA2?

IPD30N06S215ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD30N06S215ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD30N06S215ATMA2?

For technical support, including IPD30N06S215ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD30N06S215ATMA2 requirements.

6.How does Aetrix verify that IPD30N06S215ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD30N06S215ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD30N06S215ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD30N06S215ATMA2?

All IPD30N06S215ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD30N06S215ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD30N06S215ATMA2 part is unused and in its original packaging.

Return procedure for IPD30N06S215ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…