Infineon Technologies IPD30N08S2L21ATMA1

Overview

IPD30N08S2L21ATMA1 from Infineon Technologies is an N-channel logic-level OptiMOS® power MOSFET in PG-TO252-3-11 (DPAK) package, rated for 75 V V_DS, 30 A continuous drain current at T_C = 100 °C, and ultra-low R_DS(on) of 15.9 mΩ (typ.) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and operates up to 175 °C - deployed in automotive body control modules and 12 V DC-DC synchronous rectification.

For engineers reviewing the IPD30N08S2L21ATMA1 datasheet, IPD30N08S2L21ATMA1 pinout, IPD30N08S2L21ATMA1 application, or IPD30N08S2L21ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low conduction loss at 4.5 V gate drive (R_DS(on) ≤ 26 mΩ), thermal resistance (R_thJC = 1.1 K/W), and integrated avalanche ruggedness (E_AS = 240 mJ).

Technical Context

This device uses trench-based silicon MOSFET technology optimized for low R_DS(on) and fast switching in 12 V automotive systems. Its logic-level gate enables direct drive from microcontrollers without level-shifting, while the integrated body diode supports synchronous rectification with t_rr = 50 ns and Q_rr = 120 nC.

The PG-TO252-3-11 package features a thermally enhanced drain pad and MSL1 rating for lead-free reflow up to 260 °C. Thermal design is supported by validated R_thJC = 1.1 K/W and R_thJA = 50 K/W on 6 cm² PCB copper area - critical for high-current motor drivers and load switches.

Key Specifications

Pinout & Package

IPD30N08S2L21ATMA1 is housed in PG-TO252-3-11 (DPAK), a surface-mount package with exposed drain pad for thermal dissipation. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STL100N3LLH6 and IRL3803PBF, IPD30N08S2L21ATMA1 uniquely combines 75 V rating, AEC-Q101 compliance, logic-level drive, and DPAK thermal performance - making it the only drop-in solution for production automotive body electronics requiring both ruggedness and space-constrained layout.

Availability

IPD30N08S2L21ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, engine cooling fan drivers, and industrial 24 V load switches requiring stable component supply across multi-year production cycles.

Supply support for IPD30N08S2L21ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-current, low-voltage automotive and industrial switching applications demanding low gate charge and high thermal reliability.

FAQ

Is IPD30N08S2L21ATMA1 pin-compatible with earlier IPD30N08S2L versions?

Yes - IPD30N08S2L21ATMA1 uses the same PG-TO252-3-11 package and identical pinout (G-D-S) as prior revisions of the IPD30N08S2L series. Electrical specifications are unchanged; the "21" suffix denotes tape-and-reel packaging per AEC-Q101 release standards.

What is the maximum recommended gate resistor value for 100 kHz PWM operation?

For 100 kHz switching with minimal overshoot, a gate resistor of 3.9 Ω is validated per Infineon's application note ANPS071E. Higher values (>10 Ω) increase t_d(on) and t_d(off), raising switching losses; lower values (<2.2 Ω) risk ringing due to PCB trace inductance.

Does this MOSFET require a gate pull-down resistor in automotive applications?

Yes - a 10 kΩ gate-to-source pull-down resistor is mandatory to prevent unintended turn-on from EMI or floating gate conditions during MCU reset or sleep modes. This is specified in Infineon's automotive design guidelines for OptiMOS® devices.

Can IPD30N08S2L21ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (see Fig. 9) enables current sharing. Use matched gate resistors (±5%), symmetrical PCB layout, and common-source routing. Derate total current by 15% to account for thermal coupling between devices on shared copper areas.