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Infineon Technologies IPD50N03S4L06ATMA1

Name: IPD50N03S4L06ATMA1
Brand: Infineon Technologies
SKU: IPD50N03S4L06ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N03S4L06ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N03S4L06ATMA1.pdf

Description:: MOSFET N-CH 30V 50A TO252-31

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Product details

Overview

IPD50N03S4L06ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 5.5 mΩ R_DS(on) at V_GS = 10 V. It features 100% single-pulse avalanche testing, 175 °C maximum junction temperature, and integrated body diode with 0.95 V typical V_SD at 50 A.

For engineers reviewing the IPD50N03S4L06ATMA1 datasheet, IPD50N03S4L06ATMA1 pinout, IPD50N03S4L06ATMA1 application, or IPD50N03S4L06ATMA1 equivalent, key selection criteria include its automotive-grade reliability, low R_DS(on) at 4.5 V gate drive, thermal resistance of 2.7 K/W (junction-to-case), and suitability for high-current DC-DC, motor control, and load switching in harsh environments.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology to achieve low conduction losses while maintaining fast switching performance. Its gate threshold voltage (1.0–2.2 V) enables robust turn-on with standard 3.3 V or 5 V logic-level drivers, and its Q_g of 24–31 nC supports efficient gate driving at frequencies up to several hundred kHz.

The integrated Schottky-like body diode delivers t_rr = 17 ns and Q_rr = 14 nC under defined conditions, reducing switching loss during freewheeling. Thermal design is enabled by a validated R_thJC of 2.7 K/W and compatibility with standard FR4 PCBs using 6 cm² copper area for drain connection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V automotive and industrial power rails
R_DS(on) max	5.5 mΩ at V_GS = 10 V - Enables <1.4 W conduction loss at 50 A continuous operation
I_D continuous	50 A at T_C = 25 °C - Supported by bondwire-limited current rating and 2.7 K/W thermal path
E_AS	36 mJ - Confirmed single-pulse avalanche energy for robustness against inductive switching stress
Q_g	24–31 nC - Determines gate driver power requirement and switching speed trade-off
t_r/t_f	1 ns / 7 ns - Fast edge rates support high-frequency synchronous rectification and PWM control
V_GS(th)	1.0–2.2 V - Ensures reliable turn-on with 3.3 V microcontrollers without level-shifting
T_j max	+175 °C - Qualified for under-hood automotive applications and high-ambient industrial use

Pinout & Package

Package: PG-TO252-3-11 (DPAK variant with exposed drain pad, 3-pin surface-mount). Standardized footprint compatible with IPC-7351B DPAK-3 land pattern.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <31 nC charge for full enhancement
Pin 3 (Drain)	Power output	Exposed copper pad on bottom side - primary thermal and current path to PCB copper

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis systems per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse E_AS = 36 mJ stress, ensuring ruggedness in inductive loads
Low R_DS(on) at 4.5 V	6.9–9.0 mΩ - Enables direct drive from 5 V MCUs in battery-powered and start-stop systems
MSL1 reflow rating	Peak solder temperature up to 260 °C - compatible with standard lead-free SMT assembly lines
Green product (RoHS)	Halogen-free, lead-free, and compliant with EU Directive 2011/65/EU

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Driver

Use Scenario: High-side load switching for headlamps, fog lamps, and HVAC actuators in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: N-channel MOSFET used as low-side switch with external high-side driver or as part of half-bridge configuration.

Use Value: 50 A rating and 175 °C T_j ensure uninterrupted operation during engine bay thermal transients and cold-crank voltage dips.

Use Scenario: Bidirectional current control in brushed DC motors for conveyor systems and automated valves.

IC Role / Device Role / Timing Role: Power stage switch in H-bridge topology, handling forward/reverse commutation and regenerative braking.

Use Value: Low Q_gd (3–6 nC) and fast t_f (7 ns) minimize shoot-through risk and reduce switching loss during direction reversal.

48 V Mild Hybrid DC-DC Converter

Server PSU OR-ing FET

Use Scenario: Synchronous rectification in buck-derived 48 V–12 V converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200–500 kHz PWM frequency with 10 V gate drive.

Use Value: R_DS(on) of 4.9 mΩ at 10 V ensures <1.2 W conduction loss at 50 A, improving converter efficiency above 95%.

Use Scenario: Hot-swap and redundancy management in 12 V server backplanes with dual PSUs.

IC Role / Device Role / Timing Role: OR-ing FET placed between PSU output and system rail to prevent backfeed and enable seamless switchover.

Use Value: Integrated body diode with 0.95 V V_SD and 17 ns t_rr minimizes forward drop and reverse recovery loss during transient load steps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N3LLH6	R_DS(on) = 3.3 mΩ @ 10 V; higher gate charge (Q_g = 42 nC); TO-263 package	Better conduction loss but slower switching; requires larger gate driver capability	Preferred where ultra-low R_DS(on) dominates over switching frequency constraints
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 10 V; no AEC-Q101 qualification; TO-220AB package	Lacks automotive qualification and MSL1 reflow rating; not suitable for automotive production	Suitable only for cost-sensitive industrial prototypes without automotive compliance needs

Compared with STL130N3LLH6 and IRL3803PBF, IPD50N03S4L06ATMA1 offers balanced conduction-switching performance, guaranteed automotive qualification, and surface-mount compatibility-making it optimal for volume automotive electronics where reliability, thermal management, and assembly yield are critical.

Availability

IPD50N03S4L06ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, 48 V mild hybrid DC-DC converters, and server OR-ing applications requiring stable component supply across multi-year production cycles.

Supply support for IPD50N03S4L06ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-T2 family, engineered for high-efficiency, high-reliability power switching in automotive and industrial applications where thermal robustness and gate-drive flexibility are essential.

FAQ

Is IPD50N03S4L06ATMA1 suitable for 48 V battery systems?

Yes. With a 30 V V_DS rating and 175 °C maximum junction temperature, it operates safely in 48 V nominal systems when used with appropriate derating and layout-especially in synchronous rectifier roles where peak drain-source voltage remains below 30 V due to active clamping or topology constraints.

What is the recommended gate resistor value for 100 kHz PWM operation?

For 100 kHz operation with a 31 nC total gate charge and typical 1–2 A gate driver, a 10 Ω series resistor balances switching speed and ringing suppression. This yields ~30 ns effective rise/fall times while limiting dV/dt-induced crosstalk in multi-FET layouts.

Does this MOSFET require a gate driver IC when driven by a 3.3 V MCU?

Yes. While V_GS(th) starts at 1.0 V, full enhancement (R_DS(on) ≤ 9.0 mΩ) requires ≥4.5 V. A level-shifting gate driver such as TC4427 or MIC4423 is required to deliver sufficient V_GS and peak current for reliable 50 A switching.

Can IPD50N03S4L06ATMA1 replace IPD50N03S4L08ATMA1 in existing designs?

No. The "06" suffix denotes 5.5 mΩ R_DS(on), while "08" specifies 8.0 mΩ. Substituting introduces lower conduction loss but may increase gate drive demand and alter thermal behavior-requiring validation of gate loop stability, PCB copper thermal capacity, and avalanche margin under fault conditions.

IPD50N03S4L06ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50N03S4L06ATMA1 FAQ

1.How can I place an order for IPD50N03S4L06ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N03S4L06ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N03S4L06ATMA1 reliable?

The price and inventory of IPD50N03S4L06ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N03S4L06ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N03S4L06ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N03S4L06ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N03S4L06ATMA1?

IPD50N03S4L06ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N03S4L06ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N03S4L06ATMA1?

For technical support, including IPD50N03S4L06ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N03S4L06ATMA1 requirements.

6.How does Aetrix verify that IPD50N03S4L06ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N03S4L06ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N03S4L06ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N03S4L06ATMA1?

All IPD50N03S4L06ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N03S4L06ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N03S4L06ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N03S4L06ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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