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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N04S408ATMA1

Name: IPD50N04S408ATMA1
Brand: Infineon Technologies
SKU: IPD50N04S408ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N04S408ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N04S408ATMA1.pdf

Description:: MOSFET N-CH 40V 50A TO252-3

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Product details

Overview

IPD50N04S408ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-313 package, rated for 40 V V_DS, 7.9 mΩ R_DS(on) at 10 V V_GS, and 50 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested-used in automotive DC-DC converters, motor control H-bridges, and high-efficiency power switches.

For engineers reviewing the IPD50N04S408ATMA1 datasheet, IPD50N04S408ATMA1 pinout, IPD50N04S408ATMA1 application, or IPD50N04S408ATMA1 equivalent, key selection criteria include its 3.3 K/W R_thJC, 55 mJ single-pulse avalanche energy, integrated body diode with 34 ns t_rr, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This MOSFET employs trench-based silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while the 17.2–22.4 nC total gate charge supports fast switching at moderate gate resistance (e.g., 3.5 Ω).

The device integrates a co-packaged freewheeling diode with 0.9–1.3 V forward voltage at 50 A and exhibits controlled reverse recovery (Q_rr = 27 nC), making it suitable for synchronous rectification and hard-switched topologies where diode performance impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V automotive battery rails including load dump transients.
R_DS(on) max	7.9 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.5 W conduction loss at full current, reducing heatsink requirements.
I_D continuous	50 A at T_C = 25 °C - Limited by bondwire; derates to 47 A at 100 °C case temperature.
E_AS	55 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive switching stress without external snubbers.
t_rr	34 ns - Fast reverse recovery time minimizes commutation losses and voltage overshoot in bridge configurations.
R_thJC	3.3 K/W - Low junction-to-case thermal resistance allows direct mounting to heatsinks for high-power density designs.
Q_g	17.2–22.4 nC - Gate charge value determines required driver peak current and switching speed trade-offs.

Pinout & Package

IPD50N04S408ATMA1 uses the PG-TO252-3-313 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package meets MSL1 per J-STD-020 and supports lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge.
Pin 2 (Gate)	Control input	Receives gate drive signal; requires <20 V absolute max rating and low-impedance path to minimize ringing.
Pin 3 (Drain)	Power output / high-side connection	Exposed copper pad on bottom surface-must be soldered to PCB copper pour for thermal and current conduction.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including engine control, ADAS power stages, and body electronics.
100% avalanche tested	Each unit undergoes single-pulse avalanche stress test ensuring robustness in inductive load switching.
Green Product (RoHS)	Lead-free and halogen-free construction compliant with EU RoHS Directive 2011/65/EU.
175 °C operating temperature	Enables placement near hot components (e.g., engines, inverters) without derating or thermal throttling.
Low Q_gd/Q_g ratio	Typical 5.5 nC Q_gd vs. 22.4 nC Q_g improves Miller immunity and reduces switching instability risk.

Applications

Automotive DC-DC Converters

Motor Control H-Bridges

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: 7.9 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 12 mΩ devices, improving efficiency at 25 A load.

Use Scenario: Bidirectional 12 V brushed DC motor drive in power seats and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with PWM frequency up to 20 kHz.

Use Value: 50 A continuous rating and 200 A pulsed capability support stall-current handling without thermal shutdown.

LED Headlamp Drivers

Start-Stop System Power Switches

Use Scenario: Constant-current LED string regulation with dimming via PWM modulation.

IC Role / Device Role / Timing Role: High-side current-sense FET with fast turn-on (<12 ns) and minimal gate charge.

Use Value: 34 ns t_rr and 27 nC Q_rr suppress voltage spikes during PWM edge transitions, reducing EMI filter size.

Use Scenario: Main battery disconnect and pre-charge control during engine restart cycles.

IC Role / Device Role / Timing Role: Primary power path switch managing 300–500 A inrush with soft-start sequencing.

Use Value: 55 mJ E_AS withstands repeated 100 A inductive transients during contactor bounce events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N4LF6AG	R_DS(on) = 6.8 mΩ (typ), Q_g = 25.5 nC, same PG-TO252 package	Lower R_DS(on) but higher gate charge increases driver loss; no AEC-Q101 documentation publicly available	Prefer when lowest conduction loss dominates and AEC validation is not mandated.
IRF7470PBF	R_DS(on) = 10.5 mΩ, Q_g = 15.5 nC, TO-252 package, non-automotive grade	Higher R_DS(on) increases conduction loss; lacks 175 °C rating and avalanche testing	Acceptable for industrial 12 V supplies where automotive reliability is not required.

Compared with STL130N4LF6AG and IRF7470PBF, IPD50N04S408ATMA1 delivers certified automotive ruggedness, lower gate charge than ST's part, and superior thermal margin-making it optimal for safety-critical 12 V power stages where lifetime reliability is non-negotiable.

Availability

IPD50N04S408ATMA1 is available at Aetrix Electronics and suitable for automotive power management, motor control, LED lighting, and start-stop system designs requiring stable component supply across extended product lifecycles.

Supply support for IPD50N04S408ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor drive applications.

FAQ

What is the maximum allowable gate-source voltage for IPD50N04S408ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with minimum 6 V to ensure reliable turn-on across temperature and process variation. Gate drive circuits must include clamping or Zener protection if subject to transient coupling.

Does IPD50N04S408ATMA1 have an integrated body diode, and what are its key parameters?

Yes-it features a monolithic body diode with 50 A continuous forward current rating, 200 A pulsed capability, and 0.9–1.3 V forward voltage at 50 A and 25 °C. Reverse recovery time is 34 ns with 27 nC Q_rr, enabling use in synchronous rectification without external diodes in many 12 V topologies.

Can IPD50N04S408ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.5%/°C) enables inherently stable current sharing. Successful parallel operation requires matched layout, symmetrical gate drive paths, and individual gate resistors (≥5 Ω) to damp oscillation. Thermal coupling between devices must also be minimized.

Is the PG-TO252-3-313 package lead-free and RoHS-compliant?

Yes-the package uses lead-free solderable terminations and complies with EU RoHS Directive 2011/65/EU. It is classified as "Green Product" by Infineon, containing no intentionally added halogens or restricted substances above threshold limits. MSL1 rating confirms suitability for standard Pb-free reflow profiles.

IPD50N04S408ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 17µA

Gate Charge (Qg) (Max) @ Vgs:: 22.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1780 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD50N04S408ATMA1 FAQ

1.How can I place an order for IPD50N04S408ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N04S408ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N04S408ATMA1 reliable?

The price and inventory of IPD50N04S408ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N04S408ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N04S408ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N04S408ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N04S408ATMA1?

IPD50N04S408ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N04S408ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N04S408ATMA1?

For technical support, including IPD50N04S408ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N04S408ATMA1 requirements.

6.How does Aetrix verify that IPD50N04S408ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N04S408ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N04S408ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N04S408ATMA1?

All IPD50N04S408ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N04S408ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N04S408ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N04S408ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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