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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50N04S410ATMA1

Name: IPD50N04S410ATMA1
Brand: Infineon Technologies
SKU: IPD50N04S410ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50N04S410ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50N04S410ATMA1.pdf

Description:: MOSFET N-CH 40V 50A TO252-3-313

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Product details

Overview

IPD50N04S410ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO252-3-313 (DPAK) package, rated for 40 V V_DS, 50 A continuous drain current at T_C = 25°C, and 9.3 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175°C junction temperature and is 100% avalanche tested for automotive power switching in DC-DC converters and motor control.

For engineers reviewing the IPD50N04S410ATMA1 datasheet, IPD50N04S410ATMA1 pinout, IPD50N04S410ATMA1 application, or IPD50N04S410ATMA1 equivalent, key selection criteria include its 40 V breakdown voltage, low 8.5–9.3 mΩ on-resistance, 175°C thermal rating, AEC-Q101 qualification, and TO252-3 package compatibility with high-current PCB layouts.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while 14.0–18.2 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 50 A and 34 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V automotive rail applications with margin against load dump transients.
R_DS(on), max	9.3 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1 W conduction loss at 50 A, critical for thermally constrained modules.
I_D, cont	50 A at T_C = 25°C - Supports high-current loads such as starter relays, fuel pumps, and HVAC blowers.
E_AS	42 mJ single-pulse - Withstands inductive energy from solenoids and motors during turn-off without failure.
T_j max	+175°C - Allows operation in under-hood environments without derating in engine control units.
Q_g	14.0–18.2 nC - Determines gate driver strength requirement; compatible with standard 1–2 A peak drivers.
V_GS(th)	2.0–4.0 V - Ensures reliable turn-on with 3.3 V or 5 V logic, reducing risk of partial enhancement.

Pinout & Package

Package: PG-TO252-3-313 (DPAK), surface-mount, single-drain-tab configuration with exposed drain pad for thermal conduction to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt for accurate monitoring.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring RC snubber or gate resistor to limit dV/dt-induced shoot-through.
Pin 3 (Drain)	Power output	Exposed metal tab - must be soldered to ≥6 cm² copper pour for 40 K/W R_thJA thermal performance.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including temperature cycling, humidity bias HAST, and mechanical shock.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at 42 mJ, ensuring robustness in inductive switching.
MSL1 reflow rating	Compatible with lead-free reflow profiles up to 260°C peak, eliminating moisture sensitivity handling concerns.
Green product (RoHS)	Lead-free, halogen-free, and compliant with EU RoHS Directive 2011/65/EU and REACH SVHC.
Integrated body diode	Optimized for fast recovery (t_rr = 34 ns) and low V_SD (0.9–1.3 V), enabling efficient freewheeling without discrete diode.

Applications

Automotive Body Control Module (BCM)

12 V DC-DC Buck Converter

Use Scenario: Switching power distribution to headlights, fog lamps, and interior lighting via centralized relay replacement.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 20–40 A loads with PWM dimming capability.

Use Value: 9.3 mΩ R_DS(on) reduces heat generation vs. mechanical relays, enabling compact sealed module design.

Use Scenario: Primary switch in 12 V input → 5 V/3.3 V step-down converter for infotainment and ADAS domain controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switch operating at 200–500 kHz with low Q_g and C_oss.

Use Value: 14–18 nC Q_g and 290–406 pF C_oss enable high-efficiency switching with minimal driver loss.

Electric Power Steering (EPS) Motor Driver

Automotive HVAC Blower Control

Use Scenario: Half-bridge leg in three-phase inverter driving brushless EPS assist motor (≤500 W).

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology with fast turn-off (t_f = 5 ns) and avalanche ruggedness.

Use Value: 175°C T_j rating ensures reliability during sustained torque assist under hood ambient >125°C.

Use Scenario: PWM-controlled fan speed regulation in climate control systems using 12 V brushed DC blower motors.

IC Role / Device Role / Timing Role: Low-side switch with integrated diode conducting reverse current during PWM off-time.

Use Value: 0.9–1.3 V V_SD minimizes power loss in freewheeling path, improving system efficiency by ~3% over discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N4LF6AG	R_DS(on) = 1.2 mΩ lower (8.1 mΩ typ), Q_g = 21.5 nC higher, same TO252-3 package and AEC-Q101 grade.	Better conduction loss but higher gate drive demand; suited for fixed-frequency <300 kHz designs with strong drivers.	Select when minimizing I²R loss dominates over switching loss and gate drive capability allows extra 3.5 nC charge.
IRF3205PbF	Non-AEC qualified, R_DS(on) = 8.0 mΩ typ but T_j max = 175°C not validated per AEC; older planar process, higher C_iss (1800 pF).	Not suitable for production automotive ECUs; acceptable only for non-safety prototyping or industrial 12 V systems.	Use only for cost-sensitive non-automotive applications where AEC compliance and modern switching performance are not required.

Compared with STL120N4LF6AG, IPD50N04S410ATMA1 offers lower gate charge for faster switching and better thermal stability across temperature; versus IRF3205PbF, it delivers certified automotive reliability, tighter parameter distributions, and superior dynamic performance despite slightly higher R_DS(on).

Availability

IPD50N04S410ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, 12 V DC-DC conversion, and electric power steering systems requiring stable component supply, long-term lifecycle support, and AEC-Q101 traceability.

Supply support for IPD50N04S410ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T2 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive subsystems including lighting, motor control, and power conversion.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IPD50N04S410ATMA1 supports 36 A continuous drain current at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO252-3 package and must be verified against actual board layout and ambient conditions.

Is this MOSFET suitable for synchronous rectification in a 40 V input buck converter?

Yes - its 40 V V_DS, low 9.3 mΩ R_DS(on), and fast 34 ns t_rr body diode make it suitable for synchronous rectification in 12–40 V input buck converters. However, external gate control timing must prevent shoot-through during dead-time transitions.

Does the device require a heatsink in typical automotive applications?

No dedicated heatsink is required if mounted on ≥6 cm² of 70 µm copper on FR4 PCB per Infineon's thermal test condition. For sustained 50 A operation at high ambient temperatures (>85°C), additional copper area or forced airflow is recommended to maintain T_j ≤ 175°C.

What is the significance of the "100% avalanche tested" specification?

Every unit undergoes single-pulse avalanche stress testing at 42 mJ (I_D = 25 A, V_DS = 40 V), verifying ruggedness against inductive energy spikes in motor and solenoid switching. This ensures field reliability beyond standard SOA limits and eliminates latent failures from untested devices.

IPD50N04S410ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 15µA

Gate Charge (Qg) (Max) @ Vgs:: 18.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1430 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 41W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD50N04S410ATMA1 FAQ

1.How can I place an order for IPD50N04S410ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N04S410ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N04S410ATMA1 reliable?

The price and inventory of IPD50N04S410ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N04S410ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50N04S410ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N04S410ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N04S410ATMA1?

IPD50N04S410ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N04S410ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N04S410ATMA1?

For technical support, including IPD50N04S410ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N04S410ATMA1 requirements.

6.How does Aetrix verify that IPD50N04S410ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50N04S410ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N04S410ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50N04S410ATMA1?

All IPD50N04S410ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N04S410ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N04S410ATMA1 part is unused and in its original packaging.

Return procedure for IPD50N04S410ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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