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Infineon Technologies IPD50N06S214ATMA2

Part No.:
IPD50N06S214ATMA2
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD50N06S214ATMA2.pdf
Description:
MOSFET N-CH 55V 50A TO252-31
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,427

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Product details

Overview

IPD50N06S214ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 55 V VDS, 50 A continuous drain current at TC = 25 °C, and ultra-low 14.4 mΩ max RDS(on). It delivers robust avalanche energy (240 mJ), operates up to 175 °C junction temperature, and is used in automotive body control modules for high-side load switching.

For engineers reviewing the IPD50N06S214ATMA2 datasheet, IPD50N06S214ATMA2 pinout, IPD50N06S214ATMA2 application, or IPD50N06S214ATMA2 equivalent, key selection criteria include RDS(on) at 10 V gate drive, 100% avalanche rating, thermal resistance (RthJC = 1.1 K/W), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in DC-DC converters and motor drivers. Its gate threshold voltage (2.1–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while its 167 pF reverse transfer capacitance (Crss) supports fast, controlled switching transitions.

The integrated body diode features 1.3 V forward voltage at 50 A and 45 ns reverse recovery time, enabling efficient freewheeling in inductive loads. Thermal design is supported by a low junction-to-case resistance (1.1 K/W) and validated performance on 6 cm² PCB copper area.

Key Specifications

ParameterValue and Actual Design Meaning
VDS55 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin
RDS(on) max14.4 mΩ at VGS = 10 V, ID = 32 A - Enables <1.5 W conduction loss at 50 A in high-current switching nodes
ID cont50 A at TC = 25 °C - Supported by bondwire-limited current handling and thermal interface design
EAS240 mJ - 100% production-tested single-pulse avalanche capability for inductive load protection
RthJC1.1 K/W - Enables direct heatsink mounting with predictable junction temperature rise under full load
Qg total52 nC max - Determines gate driver power requirement and switching speed in PWM applications
VGS(th)2.1–4.0 V - Ensures clean turn-on with standard microcontroller GPIO or level-shifted drivers

Pinout & Package

IPD50N06S214ATMA2 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard DPAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives gate drive signal; requires ≤20 V absolute max to avoid oxide damage
Pin 2 (Drain)High-side power output / heat pathElectrically and thermally connected to exposed copper tab; must be soldered to PCB copper pour
Pin 3 (Source)Reference return / current sense nodeServes as common reference for gate drive and current monitoring; low-inductance routing critical

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive under-hood operation including temperature cycling, humidity, and mechanical shock
MSL1 reflow ratingWithstands peak reflow temperatures up to 260 °C without delamination or parametric shift
175 °C operating TjEnables placement near heat sources (e.g., engine bay ECUs) without derating or forced cooling
Green (lead-free) packageComplies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity requirements
Integrated body diodeRated for 50 A continuous forward current and 45 ns trr, supporting synchronous rectification in buck converters

Applications

Automotive Body Control Module (BCM)12 V DC-DC Converter Primary Switch

Use Scenario: High-side switching of headlights, fog lamps, and HVAC blowers in modern BCMs.

IC Role / Device Role / Timing Role: Power MOSFET switch controlling load current with PWM dimming and short-circuit protection.

Use Value: Ultra-low RDS(on) reduces power loss and thermal stress during sustained 40–50 A loads at ambient >85 °C.

Use Scenario: Primary-side switch in non-isolated buck converter supplying 5 V/3 A to infotainment subsystems.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement for Schottky diode in high-efficiency step-down regulation.

Use Value: 14.4 mΩ RDS(on) and 52 nC Qg enable >94% efficiency at 500 kHz switching frequency with minimal gate drive loss.

Electric Power Steering (EPS) Motor DriverIndustrial PLC Output Stage

Use Scenario: Half-bridge leg in 24 V EPS motor phase control with regenerative braking.

IC Role / Device Role / Timing Role: High-current switching element handling bidirectional motor current and flyback energy.

Use Value: 240 mJ avalanche rating and 175 °C Tj ensure safe operation during motor stall and inductive kickback events.

Use Scenario: Solid-state relay replacement in programmable logic controller digital output modules.

IC Role / Device Role / Timing Role: Load switch isolating field devices (valves, solenoids) from controller logic.

Use Value: AEC-Q101 qualification provides extended reliability and lifetime prediction for industrial automation deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL130N5LF6AG60 V VDS, 130 A ID, 4.5 mΩ RDS(on), TO-263 packageHigher current rating and lower RDS(on), but larger footprint and higher gate charge (95 nC)Preferred for new designs requiring higher efficiency at >60 A, where board space allows TO-263 mounting
IRF540NPBF100 V VDS, 33 A ID, 44 mΩ RDS(on), TO-220 packageLower voltage rating margin, higher conduction loss, through-hole only, no AEC-Q101 qualificationSuitable for cost-sensitive industrial prototypes without automotive qualification requirements

Compared with STL130N5LF6AG and IRF540NPBF, IPD50N06S214ATMA2 offers optimal balance of AEC-Q101 compliance, thermal performance (1.1 K/W), and compact DPAK packaging for space-constrained automotive modules-without over-specifying voltage or gate drive demand.

Availability

IPD50N06S214ATMA2 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across multi-year production cycles.

Supply support for IPD50N06S214ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS® 2nd generation power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion applications.

FAQ

Is IPD50N06S214ATMA2 suitable for 24 V commercial vehicle applications?

Yes. With 55 V VDS, 175 °C maximum junction temperature, and AEC-Q101 qualification, it withstands 24 V system transients (e.g., load dump up to 35 V) and operates reliably in cab or chassis-mounted control units exposed to wide ambient ranges.

What is the recommended PCB layout for thermal performance?

Mount the exposed drain pad directly to ≥6 cm² of 70 µm thick copper on FR4 PCB, using ≥4 thermal vias (0.3 mm diameter) under the pad connected to internal ground or power planes. Avoid solder mask over the drain pad to maximize thermal conduction.

Does this MOSFET require a gate resistor for automotive PWM operation?

Yes. A 7.5 Ω series gate resistor is specified in the datasheet for 50 A switching tests. This value balances EMI suppression, dv/dt control, and switching speed-critical for avoiding shoot-through in half-bridge configurations used in motor drives.

Can the body diode be used for continuous freewheeling in a buck converter?

Yes. The diode is rated for 50 A continuous forward current at Tj = 25 °C and 1 A at 125 °C. For sustained operation above 25 °C, thermal design must ensure junction temperature remains ≤175 °C, typically requiring active cooling or current derating per the SOA curve.

IPD50N06S214ATMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
14.4mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:
4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
52 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1485 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11

IPD50N06S214ATMA2 FAQ

1.How can I place an order for IPD50N06S214ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50N06S214ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50N06S214ATMA2 reliable?

The price and inventory of IPD50N06S214ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N06S214ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD50N06S214ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N06S214ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50N06S214ATMA2?

IPD50N06S214ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50N06S214ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50N06S214ATMA2?

For technical support, including IPD50N06S214ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N06S214ATMA2 requirements.

6.How does Aetrix verify that IPD50N06S214ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD50N06S214ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N06S214ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD50N06S214ATMA2?

All IPD50N06S214ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N06S214ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50N06S214ATMA2 part is unused and in its original packaging.

Return procedure for IPD50N06S214ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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