Infineon Technologies IPD50N06S2L13ATMA2

Overview

IPD50N06S2L13ATMA2 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial switching applications. It features a 55 V V_DS, 10.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 34 A, 175 °C maximum junction temperature, AEC-Q101 qualification, and PG-TO252-3-11 surface-mount package. It delivers high-current capability (50 A continuous) with ultra-low conduction loss in motor control and DC-DC converter stages.

For engineers reviewing the IPD50N06S2L13ATMA2 datasheet, IPD50N06S2L13ATMA2 pinout, IPD50N06S2L13ATMA2 application, or IPD50N06S2L13ATMA2 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, avalanche energy rating (240 mJ), thermal resistance (R_thJC = 1.1 K/W), and integrated body diode performance (V_SD = 0.9–1.3 V at 50 A).

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining fast switching (t_r = 29 ns, t_f = 12 ns) and robust unclamped inductive switching capability. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.

The integrated Schottky-like body diode supports synchronous rectification and freewheeling in half-bridge topologies. Thermal design is enabled by its low junction-to-case resistance (1.1 K/W) and MSL1-rated lead-free package, supporting reflow up to 260 °C.

Key Specifications

Pinout & Package

IPD50N06S2L13ATMA2 is housed in a PG-TO252-3-11 (D-Pak) thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current PCB mounting. The package complies with MSL1 and supports lead-free reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STL130N5LF6AG and IRLR024NPBF, IPD50N06S2L13ATMA2 provides superior thermal performance (R_thJC = 1.1 K/W), guaranteed avalanche ruggedness, and automotive-grade reliability-making it the preferred choice for safety-critical 50 A switching in harsh environments.

Availability

IPD50N06S2L13ATMA2 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, server power OR-ing, and EV onboard charger auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for IPD50N06S2L13ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS® 2nd generation logic-level power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V systems.

FAQ

What is the maximum allowable gate-source voltage for IPD50N06S2L13ATMA2?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 0 V to 10 V for full enhancement, with 4.5 V sufficient for logic-level compatibility. Transient overshoot must be clamped below ±20 V using gate resistors and Zener protection.

Does IPD50N06S2L13ATMA2 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic parasitic body diode rated for 50 A continuous forward current and 200 A pulsed current. At T_j = 25 °C and I_F = 50 A, V_SD is 0.9–1.3 V, with t_rr = 52 ns and Q_rr = 99 nC under specified test conditions (V_R = 30 V, di/dt = 100 A/µs).

How does the PG-TO252-3-11 package affect thermal performance in PCB layout?

The exposed drain pad requires soldering to ≥6 cm² of 70 µm-thick copper on FR4 PCB for optimal R_thJA = 50 K/W. With minimal footprint, R_thJA rises to 75 K/W. R_thJC remains fixed at 1.1 K/W regardless of layout, enabling accurate junction temperature modeling via case temperature measurement.

Is IPD50N06S2L13ATMA2 suitable for synchronous rectification in isolated DC-DC converters?

Yes - its low R_DS(on) (10.2 mΩ), fast switching (t_r/t_f = 29/12 ns), and logic-level gate enable direct control by PWM controllers like UCC28950 or LT3791. The body diode's low Q_rr (99 nC) reduces reverse recovery loss, and 175 °C T_j supports high-density board layouts in compact converters.