Infineon Technologies IPD50N06S409ATMA2

Overview

IPD50N06S409ATMA2 from Infineon Technologies is an N-channel enhancement-mode OptiMOS®-T2 power MOSFET rated for 60 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 9.0 mΩ maximum R_DS(on) at V_GS = 10 V. It features 100% avalanche testing, AEC-Q101 qualification, and operates up to 175 °C junction temperature-designed for high-efficiency DC-DC converters and automotive body control modules.

For engineers reviewing the IPD50N06S409ATMA2 datasheet, IPD50N06S409ATMA2 pinout, IPD50N06S409ATMA2 application, or IPD50N06S409ATMA2 equivalent, key selection criteria include its 2.1 K/W R_thJC, 87 mJ single-pulse E_AS, integrated body diode with 0.95 V typical V_SD, and PG-TO252-3-11 surface-mount package optimized for thermal performance in space-constrained automotive PCBs.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized charge distribution for low gate charge (Q_g = 36–47 nC) and fast switching (t_r = 40 ns, t_f = 5 ns). Its R_DS(on) remains stable across −55 °C to 175 °C, with only +50% drift at max T_j, enabling robust operation in under-hood environments.

The device integrates a monolithic body diode with 45 ns reverse recovery time (t_rr) and 40 nC Q_rr at 100 A/µs di/dt, supporting synchronous rectification and freewheeling in high-frequency buck converters without external diode supplementation.

Key Specifications

Pinout & Package

IPD50N06S409ATMA2 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal conduction. The package measures 6.5 mm × 6.2 mm × 2.3 mm and is MSL1 rated for lead-free reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL130N6LF6AG and IRLR024NPBF, IPD50N06S409ATMA2 delivers optimal balance of low R_DS(on), controlled Q_g, AEC-Q101 compliance, and thermal performance-making it the preferred choice for production-grade automotive and industrial power stages requiring long-term reliability and minimal derating.

Availability

IPD50N06S409ATMA2 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC conversion, motor control, and LED lighting systems requiring stable component supply and full traceability.

Supply support for IPD50N06S409ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 product line-engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPD50N06S409ATMA2?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive voltage is 10 V for full R_DS(on) specification; 5 V is sufficient for logic-level compatibility but increases R_DS(on) to ~18 mΩ. Gate resistors must limit dV/dt to avoid parasitic turn-on during fast switching transitions.

Does IPD50N06S409ATMA2 require a gate driver IC in automotive applications?

A dedicated gate driver is strongly recommended when switching above 100 kHz or driving >10 A loads, due to its 47 nC total gate charge. Microcontroller GPIOs alone cannot achieve clean 10 V transitions within required rise/fall times; a driver like IRS2007 or TC4427 ensures reliable turn-on/turn-off and prevents shoot-through in bridge configurations.

How does the integrated body diode perform in freewheeling applications?

The monolithic body diode has V_SD = 0.95 V (typ) at 50 A and t_rr = 45 ns, enabling efficient freewheeling in buck and flyback topologies. Its Q_rr of 40 nC is significantly lower than standard FRD diodes, reducing reverse recovery losses-but it is not optimized for continuous reverse conduction, so synchronous rectification is preferred for >100 kHz operation.

Can IPD50N06S409ATMA2 be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate resistors (<±5%), identical trace lengths, and shared thermal mass across all paralleled devices. The positive R_DS(on) temperature coefficient (−0.5%/°C) provides inherent current sharing, but mismatched R_thJC or gate delays can cause imbalance. Derate total current by 15% for two devices and 25% for three or more.