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Infineon Technologies IPD50N08S413ATMA1
- Part No.:
- IPD50N08S413ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD50N08S413ATMA1.pdf
- Description:
- MOSFET N-CH 80V 50A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,138
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Product details
Overview
IPD50N08S413ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-313 (DPAK) package, rated for 80 V VDS, 50 A continuous drain current at TC = 100 °C, and 13.2 mΩ max RDS(on) at VGS = 10 V. It delivers high-current switching in automotive body control modules, DC-DC converters, and motor drivers requiring robust avalanche capability (76 mJ single-pulse) and 175 °C operation.
For engineers reviewing the IPD50N08S413ATMA1 datasheet, IPD50N08S413ATMA1 pinout, IPD50N08S413ATMA1 application, or IPD50N08S413ATMA1 equivalent, key selection criteria include its 2.1 K/W junction-to-case thermal resistance, 100% avalanche-tested reliability, integrated body diode with 74 ns trr, and MSL1 reflow compatibility up to 260 °C - critical for automotive PCB assembly and high-temperature under-hood designs.
Technical Context
This device implements a trench-gate silicon MOSFET architecture optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while the 19–30 nC total gate charge supports efficient PWM control at frequencies up to several hundred kHz.
The integrated body diode exhibits 0.9–1.3 V forward voltage at 50 A and 25 °C, with controlled reverse recovery (Qrr = 49 nC), minimizing commutation losses in synchronous rectification and H-bridge configurations. Thermal design is enabled by its low RthJC and validated 175 °C continuous operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum blocking voltage for 24 V nominal automotive systems with 3× transient margin |
| RDS(on), max | 13.2 mΩ at VGS = 10 V, ID = 50 A - Enables <1.3 W conduction loss at full load in compact thermal layouts |
| ID, cont | 50 A at TC = 100 °C - Sustains high-current loads without derating in engine bay environments |
| EAS | 76 mJ (ID = 25 A) - Withstands inductive energy spikes in motor drive and solenoid switching |
| RthJC | 2.1 K/W - Allows direct heatsinking to chassis or copper pour for thermal management without thermal interface material |
| trr | 74 ns - Reduces switching node oscillation and EMI in high-frequency DC-DC topologies |
| Qg | 19–30 nC - Supports fast, low-loss gate driving with standard MOSFET drivers (e.g., 1EDN7512B) |
Pinout & Package
IPD50N08S413ATMA1 uses the PG-TO252-3-313 (DPAK) surface-mount package with exposed drain pad for thermal and electrical performance. The package complies with JEDEC MO-238 and features MSL1 rating for lead-free reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground plane or current-sense shunt for accurate sensing |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate requiring <100 nA leakage; driven via RC-filtered logic-level signal |
| Pin 3 (Drain) | Power output / high-side switch node | Exposed metal pad on underside - must be soldered to ≥6 cm² copper area for thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, lighting, and ADAS power stages |
| 100% avalanche tested | Each unit subjected to single-pulse EAS stress - guarantees ruggedness in inductive load switching |
| 175 °C operating temperature | Enables placement near heat sources (e.g., inverters, ECUs) without external cooling |
| MSL1 reflow rating | Withstands peak solder temperatures up to 260 °C - compatible with standard lead-free SMT lines |
| Integrated body diode | Optimized for low Qrr (49 nC) and soft recovery - reduces voltage overshoot during freewheeling |
Applications
| Automotive Body Control Module (BCM) | 12 V Automotive DC-DC Converter |
|---|---|
Use Scenario: Switching power distribution to headlights, HVAC actuators, and window lift motors. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 20–40 A loads with PWM dimming and short-circuit protection. Use Value: 13.2 mΩ RDS(on) minimizes power loss and thermal rise in space-constrained BCM housings. | Use Scenario: Primary switch in synchronous buck converter stepping 12 V battery to 5 V/3.3 V for infotainment and telematics. IC Role / Device Role / Timing Role: High-efficiency main switch operating at 200–500 kHz with low Qg and fast tr/tf. Use Value: 74 ns trr and 19–30 nC Qg reduce switching losses and EMI generation in dense PCB layouts. |
| Electric Power Steering (EPS) Motor Driver | Industrial 24 V BLDC Motor Controller |
Use Scenario: Half-bridge leg in three-phase inverter supplying 30–50 A to EPS assist motor. IC Role / Device Role / Timing Role: Low-RDS(on) power stage handling repetitive 175 °C junction temperature during torque assist peaks. Use Value: AEC-Q101 qualification and 76 mJ EAS ensure functional safety compliance and fault tolerance during motor stall events. | Use Scenario: Phase-leg switch in industrial fan or pump controller operating from 24 V supply. IC Role / Device Role / Timing Role: Robust discrete MOSFET delivering high current with minimal heatsink requirement due to 2.1 K/W RthJC. Use Value: Exposed drain pad enables direct mounting to aluminum chassis - eliminates need for isolated heatsinks in cost-sensitive designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N8F7AG | 80 V, 110 A, 6.5 mΩ RDS(on), TO-263 package, no AEC-Q101 | Higher current rating but lacks automotive qualification and has larger footprint | Select when higher current headroom is needed and automotive qualification is not required |
| IRF540NPBF | 100 V, 33 A, 44 mΩ RDS(on), TO-220 package, non-automotive | Lower current, higher RDS(on), through-hole only, no avalanche testing | Choose only for legacy industrial prototypes where cost outweighs efficiency and reliability |
Compared with STL110N8F7AG and IRF540NPBF, IPD50N08S413ATMA1 uniquely balances automotive-grade reliability, DPAK thermal performance, and 50 A/13.2 mΩ capability - making it optimal for new automotive electronics where space, temperature, and qualification are co-constrained.
Availability
IPD50N08S413ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across production lifecycles.
Supply support for IPD50N08S413ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™-T2 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/24 V systems with stringent thermal and qualification requirements.
FAQ
Is IPD50N08S413ATMA1 suitable for high-frequency PWM applications?
Yes. With 5.0 ns turn-on delay, 3.6 ns rise time, and 19–30 nC total gate charge, it supports clean switching up to 500 kHz in buck converters and motor drives. Its low Crss (29–58 pF) minimizes Miller-induced shoot-through risk when paired with appropriate gate drivers.
What is the maximum PCB copper area required for thermal performance?
The datasheet specifies 6 cm² of 70 µm thick copper on FR4 for RthJA = 40 K/W. For optimal thermal performance, the exposed drain pad must be fully soldered to this area using minimum 3 thermal vias per mm² to inner ground planes.
Does this MOSFET require a gate resistor for automotive applications?
A gate resistor (typically 3.3–10 Ω) is recommended to dampen ringing caused by PCB trace inductance and prevent unintended turn-on due to dV/dt coupling. The 6.9–9.0 nC Qgs ensures stable turn-on even with moderate series resistance.
Can IPD50N08S413ATMA1 replace older OptiMOS™-T1 devices?
Yes - it is a direct drop-in replacement for IPD50N08S2-13 with improved RDS(on) (13.2 mΩ vs. 15.5 mΩ), lower Qg, and enhanced avalanche ruggedness. No layout or driver changes are required for most existing designs.
IPD50N08S413ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1711 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 72W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-313
IPD50N08S413ATMA1 FAQ
1.How can I place an order for IPD50N08S413ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD50N08S413ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD50N08S413ATMA1 reliable?
The price and inventory of IPD50N08S413ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50N08S413ATMA1 is usually 5 days.
3.What payment methods are accepted for IPD50N08S413ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50N08S413ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD50N08S413ATMA1?
IPD50N08S413ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD50N08S413ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD50N08S413ATMA1?
For technical support, including IPD50N08S413ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50N08S413ATMA1 requirements.
6.How does Aetrix verify that IPD50N08S413ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPD50N08S413ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50N08S413ATMA1 meets industry standards.
7.What is the process for return or replacement of IPD50N08S413ATMA1?
All IPD50N08S413ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50N08S413ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD50N08S413ATMA1 part is unused and in its original packaging.
Return procedure for IPD50N08S413ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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