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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50P03P4L11ATMA2

Name: IPD50P03P4L11ATMA2
Brand: Infineon Technologies
SKU: IPD50P03P4L11ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50P03P4L11ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50P03P4L11ATMA2.pdf

Description:: MOSFET P-CH 30V 50A TO252-31

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Inventory:19,021

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Product details

Overview

IPD50P03P4L11ATMA2 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET optimized for reverse battery protection in automotive and industrial power systems. It features −30 V V_DS, 10.5 mΩ R_DS(on) at −50 A/−10 V, 175 °C maximum junction temperature, AEC-Q101 qualification, and 100% single-pulse avalanche testing. Its PG-TO252-3-11 package supports high-current DC paths in compact 12 V/24 V vehicle electronics.

For engineers reviewing the IPD50P03P4L11ATMA2 datasheet, IPD50P03P4L11ATMA2 pinout, IPD50P03P4L11ATMA2 application, or IPD50P03P4L11ATMA2 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = −1.0 to −2.0 V), low R_DS(on) at −4.5 V, avalanche ruggedness (E_AS = 100 mJ), thermal resistance (R_thJC = 2.6 K/W), and AEC-Q101 compliance for automotive deployment.

Technical Context

This device operates as a high-side reverse polarity protection switch, where the source connects to battery positive and drain to load. Its logic-level gate threshold enables direct control from 3.3 V or 5 V microcontrollers without level-shifting circuitry. The integrated body diode supports freewheeling during transient events, with V_SD = −1.0 to −1.3 V at −50 A and t_rr = 35 ns.

Thermal design leverages the low R_thJC of 2.6 K/W and MSL1 reflow capability up to 260 °C. Electrical robustness includes ±16 V gate-source rating, −50 A continuous drain current at T_C = 100 °C, and safe operating area validated for single-pulse avalanche stress up to 100 mJ at T_j = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V: Maximum reverse-battery voltage it blocks without breakdown in automotive 24 V systems.
R_DS(on) max	10.5 mΩ at −50 A/−10 V: Enables <1 W conduction loss at full rated current, reducing heatsink requirements.
V_GS(th)	−1.0 to −2.0 V: Ensures reliable turn-on with standard logic-level MCU GPIOs (3.3 V/5 V).
E_AS	100 mJ: Withstands single-pulse inductive energy from load dump or hot-swap transients without failure.
T_j max	+175 °C: Supports operation in under-hood environments and high-power density PCB layouts.
R_thJC	2.6 K/W: Allows efficient heat transfer from die to heatsink or copper pour, critical for sustained 42 A operation at 100 °C case temp.
I_D cont	−50 A at T_C = 25 °C: Matches high-current fusible link replacement in battery management modules.
Q_g	42–55 nC: Determines gate driver strength needed for fast switching in active protection circuits.

Pinout & Package

IPD50P03P4L11ATMA2 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal and electrical performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level voltage to modulate channel conductivity; requires ≤100 nA leakage current handling.
Pin 2 (Drain)	Main current path output / thermal pad	Connected to load side; large copper area required for thermal dissipation and low-inductance return path.
Pin 3 (Source)	Reference node / current return	Bonded to battery positive; serves as gate reference and defines V_GS control loop ground.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including temperature cycling, HTRB, and ESD.
100% avalanche tested	Each unit undergoes single-pulse E_AS stress to guarantee minimum 100 mJ ruggedness in field operation.
Logic-level gate drive	V_GS(th) range (−1.0 to −2.0 V) ensures full enhancement with 3.3 V MCU outputs, eliminating external level shifters.
MSL1 reflow rating	Withstands peak solder temperatures up to 260 °C, compatible with standard lead-free SMT assembly processes.
Integrated body diode	V_SD = −1.0 to −1.3 V at −50 A enables low-loss freewheeling during reverse-current transients.

Applications

Automotive Reverse Battery Protection

Industrial 24 V Power Distribution

Use Scenario: Installed between vehicle battery and ECU to prevent damage during accidental reverse connection.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as fail-safe series switch, turned on only when polarity is correct.

Use Value: Eliminates need for bulky series diodes; achieves <15 mΩ total path resistance and <0.5 W loss at 40 A.

Use Scenario: Used in programmable logic controller (PLC) backplane power rails to isolate faulty modules.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical fuses, enabling remote reset and diagnostics via gate control.

Use Value: Supports hot-swap capability with controlled inrush and fault current limiting up to −200 A pulsed.

12 V/24 V Telematics Power Management

Commercial Vehicle Body Control Module

Use Scenario: Protects GPS/GSM modules powered from vehicle battery against reverse polarity during service.

IC Role / Device Role / Timing Role: Always-on reverse polarity guard with low quiescent current (<1 µA I_DSS at 25 °C).

Use Value: Maintains module readiness during ignition-off periods while blocking leakage paths below 100 nA.

Use Scenario: Integrated into door control units to safeguard window motor drivers from battery reversal.

IC Role / Device Role / Timing Role: High-current switch enabling bidirectional motor control with integrated reverse-path clamping.

Use Value: Leverages body diode's 35 ns t_rr and 26 nC Q_rr to suppress inductive kickback without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-battery protection applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD50P03P4L11AKSA1	Same die, identical specs, but in PG-TO252-3-32 package with different marking and tape/reel orientation.	No functional difference; differs only in packaging format and reel configuration (not pinout or thermal behavior).	Select when requiring Infineon's standard tape-and-reel delivery for automated SMT placement.
IRF4905SPBF	Higher R_DS(on) (20 mΩ), higher V_GS(th) (−2.0 to −4.0 V), no AEC-Q101 or avalanche testing.	Limited to non-automotive industrial use; lacks guaranteed ruggedness for load dump events.	Choose only for cost-sensitive, non-automotive 24 V systems where gate drive voltage ≥5 V is available.

Compared with IRF4905SPBF, IPD50P03P4L11ATMA2 delivers 48 % lower conduction loss and guaranteed avalanche survival, while IPD50P03P4L11AKSA1 offers identical electrical performance in an alternate packaging variant-making the ATMA2 optimal for AEC-compliant designs needing validated reliability.

Availability

IPD50P03P4L11ATMA2 is available at Aetrix Electronics and suitable for automotive ECU protection, industrial PLC power distribution, and telematics module reverse-polarity safeguarding requiring stable component supply across multi-year production cycles.

Supply support for IPD50P03P4L11ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™-P2 P-channel MOSFET product line, engineered specifically for high-efficiency reverse-battery protection and high-side switching in harsh-environment automotive and industrial applications.

FAQ

What is the maximum allowable gate-source voltage for IPD50P03P4L11ATMA2?

The absolute maximum V_GS is −16 V (negative polarity). Exceeding this risks permanent gate oxide damage. In normal operation, gate drive should remain within −10 V to ensure reliable enhancement while avoiding overstress. The device is rated for +5 V maximum positive V_GS, though forward bias is not used in typical reverse-protection configurations.

Does IPD50P03P4L11ATMA2 require a gate resistor in reverse-battery protection circuits?

Yes-a gate resistor (typically 10–100 Ω) is recommended to dampen ringing and limit peak gate current during fast switching. This prevents oscillation due to gate-drain capacitance (Crss = 32–64 pF) interacting with PCB trace inductance, especially when driven by low-impedance MCU pins or dedicated gate drivers.

Can IPD50P03P4L11ATMA2 be used in parallel for higher current capacity?

Parallel operation is feasible but requires careful layout: matched gate drive paths, symmetrical thermal coupling, and individual gate resistors. The device's positive R_DS(on) temperature coefficient (R_DS(on) increases with T_j) promotes current sharing, but layout imbalance remains the dominant risk factor for uneven current distribution.

Is the body diode in IPD50P03P4L11ATMA2 suitable for freewheeling in motor drive applications?

Yes-the body diode has V_SD = −1.0 to −1.3 V at −50 A and t_rr = 35 ns, making it suitable for low-frequency freewheeling in brushed DC motor control. However, for high-frequency PWM (>20 kHz), external Schottky diodes are preferred to minimize switching losses and avoid Q_rr-related recovery spikes.

IPD50P03P4L11ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ P2

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 10.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: +5V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD50P03P4L11ATMA2 FAQ

1.How can I place an order for IPD50P03P4L11ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50P03P4L11ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50P03P4L11ATMA2 reliable?

The price and inventory of IPD50P03P4L11ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50P03P4L11ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD50P03P4L11ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50P03P4L11ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50P03P4L11ATMA2?

IPD50P03P4L11ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50P03P4L11ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50P03P4L11ATMA2?

For technical support, including IPD50P03P4L11ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50P03P4L11ATMA2 requirements.

6.How does Aetrix verify that IPD50P03P4L11ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD50P03P4L11ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50P03P4L11ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD50P03P4L11ATMA2?

All IPD50P03P4L11ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50P03P4L11ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50P03P4L11ATMA2 part is unused and in its original packaging.

Return procedure for IPD50P03P4L11ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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