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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R650CEAUMA1

Name: IPD50R650CEAUMA1
Brand: Infineon Technologies
SKU: IPD50R650CEAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R650CEAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R650CEAUMA1.pdf

Description:: MOSFET N-CH 500V 9A TO252-3

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Product details

Overview

IPD50R650CEAUMA1 from Infineon Technologies is a 500 V, 9 A DPAK-packaged CoolMOS™ CE superjunction power MOSFET optimized for cost-sensitive PFC and hard-switching PWM stages in LCD TV, PC Silverbox, and indoor lighting power supplies. It features 0.65 Ω R_DS(on) max at 150 °C, 15 nC total gate charge, and 1.69 µJ E_oss at 400 V.

For engineers reviewing the IPD50R650CEAUMA1 datasheet, IPD50R650CEAUMA1 pinout, IPD50R650CEAUMA1 application, or IPD50R650CEAUMA1 equivalent, this device delivers high commutation ruggedness (500 A/µs di/dt), low FOM (R_DS(on) × Q_g), and robust dv/dt immunity (50 V/ns) - critical for reliable operation in resonant and quasi-resonant topologies.

Technical Context

This CoolMOS™ CE transistor implements a superjunction cell structure enabling significantly lower conduction and switching losses than planar MOSFETs at 500 V rating. Its 15 nC Q_g, 8.1 nC Q_gd, and 5.3 V gate plateau voltage support fast, controllable turn-on/turn-off with minimal drive complexity.

The device integrates an intrinsic body diode with 162 ns t_rr, 1 µC Q_rr, and 11.1 A I_rrm, enabling use in continuous-conduction-mode PFC without external diode replacement. Thermal resistance R_thJC is 1.81 °C/W, supporting 69 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link applications with 25 % margin against overvoltage transients
R_DS(on) max	0.65 Ω @ 150 °C - enables low conduction loss in 9 A continuous drain current operation
Q_g typ	15 nC - reduces gate drive power and simplifies selection of low-power gate drivers
E_oss	1.69 µJ @ 400 V - lowers capacitive turn-on loss in high-frequency hard-switched converters
t_r/t_f	5 ns / 13 ns - supports >200 kHz switching while maintaining EMI control via controlled edge rates
I_D,pulse	19 A - accommodates short-term overload conditions in adapter and lighting surge events
R_thJC	1.81 °C/W - allows thermal design with standard DPAK PCB copper area (6 cm²) without forced cooling

Pinout & Package

IPD50R650CEAUMA1 is housed in PG-TO252 (DPAK) package with exposed drain pad for thermal and electrical connection. The package complies with JEDEC TO-252 standards and supports surface-mount reflow assembly (MSL 1, 260 °C peak).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power source terminal / return path for load current	Connected to ground or low-side reference; carries full ID and IS; requires low-inductance layout
Pin 2 (Drain)	Main power output terminal / high-voltage node	Exposed pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper pour
Pin 3 (Gate)	Control input for MOSFET channel activation	High-impedance CMOS-compatible input; sensitive to noise; requires local RC snubber or ferrite bead for paralleling

Key Features

Feature	Design Value
Superjunction architecture	Enables 0.65 Ω R_DS(on) at 500 V - 40 % lower conduction loss vs. comparable planar MOSFETs
Low E_oss (1.69 µJ)	Reduces turn-on energy loss by >35 % versus prior CoolMOS™ C7 in same package at 400 V bus
High di/dt ruggedness (500 A/µs)	Supports reliable zero-current switching in LLC resonant converters without external snubbers
Robust dv/dt immunity (50 V/ns)	Prevents false turn-on during high-slew-rate transitions in half-bridge configurations
Pb-free & halogen-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow requirements

Applications

LED Driver Power Stage

PC ATX Silverbox PFC

Use Scenario: Constant-current LED driver operating in continuous-conduction-mode boost topology with 300–400 V DC-link.

IC Role / Device Role / Timing Role: Primary switch in active PFC front-end stage; handles 9 A RMS current at 65–100 kHz.

Use Value: Low R_DS(on) and E_oss reduce thermal stress and improve efficiency to >95 % at full load.

Use Scenario: Boost PFC controller in 300–500 W desktop PC power supply with universal AC input.

IC Role / Device Role / Timing Role: High-side switching element in critical-conduction-mode (CrM) or transition-mode (TM) PFC circuit.

Use Value: Fast turn-off (27 ns t_d(off)) and low Q_gd enable stable CrM operation across line and load variations.

LCD TV Backlight Inverter

Indoor Lighting Ballast

Use Scenario: Resonant half-bridge inverter driving CCFL or LED backlight with 400 V DC-link.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge; subjected to high di/dt and reverse recovery stress.

Use Value: 500 A/µs di/dt rating and soft-recovery body diode prevent latch-up during commutation.

Use Scenario: Dimmable LED ballast using buck-boost PFC + flyback DC-DC in single-stage architecture.

IC Role / Device Role / Timing Role: Main switch in high-efficiency, low-noise PFC stage operating at 65 kHz with variable load.

Use Value: 1.81 °C/W R_thJC and 69 W P_tot allow compact heatsinkless design in enclosed luminaires.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, 1.5 Ω R_DS(on), TO-220FP package, higher Q_g (25 nC)	Lower current rating and higher conduction loss limit use to <200 W adapters	Select when legacy TO-220 footprint required and thermal budget permits higher R_DS(on)
IPP65R099C7	650 V, 12 A, 0.099 Ω R_DS(on), TO-220 package, 32 nC Q_g, CoolMOS™ C7 generation	Higher voltage rating and lower R_DS(on) but larger size and higher gate drive demand	Choose for 650 V systems or where >10 A continuous current is needed; requires stronger gate driver

Compared with STP5NK50ZFP and IPP65R099C7, IPD50R650CEAUMA1 offers optimal balance of current capability (9 A), thermal performance (1.81 °C/W), and drive simplicity (15 nC Q_g) in DPAK - making it ideal for space-constrained, cost-driven 300–500 W consumer power supplies.

Availability

IPD50R650CEAUMA1 is available at Aetrix Electronics and suitable for LCD TV power supplies, PC Silverbox PFC stages, and indoor LED lighting ballasts requiring stable component supply, long-lifecycle availability, and RoHS-compliant sourcing.

Supply support for IPD50R650CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ CE product line targets cost-sensitive consumer and lighting applications where high efficiency must be achieved without premium pricing - delivering best-in-class R_DS(on) × Q_g figure-of-merit in standard packages.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 5.3 Ω gate resistor is used in the datasheet's dynamic test conditions (V_DD = 400 V, I_D = 2.3 A). For 9 A continuous operation, a 10–22 Ω resistor balances switching speed and EMI; values above 33 Ω risk excessive turn-on time and shoot-through risk in half-bridge configurations.

Can IPD50R650CEAUMA1 be paralleled in high-current PFC designs?

Yes, but gate drive must be isolated per device: use individual ferrite beads (≥100 Ω @ 100 MHz) on each gate line or dedicated totem-pole drivers. Matched PCB trace lengths and Kelvin-source routing are mandatory to ensure current sharing within ±15 % across devices.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +13 V gate drive. A negative turn-off voltage is not required due to its 50 V/ns dv/dt ruggedness and low Q_gd; however, –5 V may be used in ultra-high-noise environments to further suppress spurious turn-on.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA curve limits continuous operation to ≤4.5 A at 400 V (DC mode). For pulse operation, 19 A is allowed only for ≤100 µs pulses - verified in Figure 3 of the datasheet under T_C = 80 °C derating guidance.

IPD50R650CEAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 1.8A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 342 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-344

IPD50R650CEAUMA1 FAQ

1.How can I place an order for IPD50R650CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R650CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R650CEAUMA1 reliable?

The price and inventory of IPD50R650CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R650CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R650CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R650CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R650CEAUMA1?

IPD50R650CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R650CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R650CEAUMA1?

For technical support, including IPD50R650CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R650CEAUMA1 requirements.

6.How does Aetrix verify that IPD50R650CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R650CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R650CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R650CEAUMA1?

All IPD50R650CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R650CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R650CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD50R650CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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