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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60N10S412ATMA1

Name: IPD60N10S412ATMA1
Brand: Infineon Technologies
SKU: IPD60N10S412ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60N10S412ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60N10S412ATMA1.pdf

Description:: MOSFET N-CH 100V 60A TO252-3

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Product details

Overview

IPD60N10S412ATMA1 from Infineon Technologies is a 100 V, 60 A, N-channel TrenchMOS power MOSFET in TO-252-3 (D-Pak) package, optimized for high-efficiency DC-DC converters and motor control stages where low R_DS(on) (12.5 mΩ max at V_GS = 10 V) and fast switching are critical. It features integrated avalanche energy rating (E_AS = 520 mJ), logic-level gate drive compatibility, and operates up to T_j = 175 °C.

For engineers reviewing the IPD60N10S412ATMA1 datasheet, IPD60N10S412ATMA1 pinout, IPD60N10S412ATMA1 application, or IPD60N10S412ATMA1 equivalent, key selection criteria include R_DS(on), Q_g, thermal resistance (R_thJC = 1.5 K/W), SOA compliance, and gate charge profile for synchronous buck stage design.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 4 technology, delivering reduced conduction and switching losses via optimized cell pitch and trench geometry. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with 5 V microcontroller outputs.

The device supports repetitive avalanche operation and meets JEDEC JESD47 reliability standards. Its SOA curve is characterized up to 100 µs pulse width, supporting robust short-circuit handling in industrial motor drives and UPS inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 48 V bus systems with 2× safety margin.
I_D (T_C = 25°C)	60 A - Continuous drain current at case temperature 25°C; derates to 42 A at 100°C.
R_DS(on) max	12.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 35 A, critical for thermally constrained PCB layouts.
Q_g typ	42 nC - Total gate charge determining driver strength requirement and switching transition time.
E_AS	520 mJ - Rated single-pulse avalanche energy, supporting non-destructive operation during inductive load switching.
R_thJC	1.5 K/W - Junction-to-case thermal resistance enabling 50 W dissipation with 75 K temperature rise to heatsink.

Pinout & Package

Package: TO-252-3 (D-Pak), surface-mount, single-drain tab configuration with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to power ground plane with low-inductance layout.
Pin 2 (Gate)	Control input	Receives PWM signal; requires 10–15 V drive for full enhancement and minimal R_DS(on).
Pin 3 (Drain)	High-side or low-side switch node	Exposed metal tab - must be electrically connected to drain net and thermally coupled to heatsink or copper pour.

Key Features

Feature	Design Value
OptiMOS™ 4 technology	Reduces R_DS(on) × Q_g figure-of-merit by 30% vs. prior generation, lowering combined conduction/switching loss.
Logic-level gate	V_GS(th) ≤ 4.0 V ensures full turn-on using standard 5 V MCU GPIO without level-shifting circuitry.
Enhanced avalanche ruggedness	Guaranteed E_AS rating enables reliable operation in inductive switching without external snubbers.
Thermally optimized D-Pak	Low R_thJC (1.5 K/W) and large drain pad allow direct thermal coupling to PCB copper, reducing heatsink dependency.

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Three-phase inverter stage for 200–500 W BLDC fans and pumps in HVAC and factory automation.

IC Role / Device Role / Timing Role: Low-side power switch in 6-step commutation; synchronized to gate driver IC (e.g., IR2101).

Use Value: 12.5 mΩ R_DS(on) limits conduction loss to <0.5 W per phase at 15 A RMS, improving system efficiency to >94%.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: High-current, high-frequency switching element in synchronous buck topology operating at 300 kHz.

Use Value: 42 nC Q_g enables clean 50 ns turn-on with 2 A peak gate driver, minimizing dead-time losses.

Uninterruptible Power Supply

Automotive Body Control Module

Use Scenario: Output stage in 1 kVA online UPS inverter feeding AC loads during mains failure.

IC Role / Device Role / Timing Role: Half-bridge switch in H-bridge output stage; driven by isolated gate driver (e.g., Si8233).

Use Value: 520 mJ E_AS withstands inductive kickback from transformer leakage during fault transitions.

Use Scenario: Load switch for headlight LED drivers and window lift motors in 12 V automotive systems.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated overtemperature and short-circuit shutdown.

Use Value: 175 °C max junction temperature allows operation under hood ambient up to 125 °C with 50 K thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF10	R_DS(on) = 14 mΩ (higher), Q_g = 55 nC (higher), TO-220 package	Requires bolted heatsink; unsuitable for space-constrained SMT designs	Prefer IPD60N10S412ATMA1 for SMT-based, thermally dense applications.
IRF540NPBF	R_DS(on) = 44 mΩ (3.5× higher), V_DS = 100 V, TO-220	Limited to <15 A continuous; inadequate for 60 A peak motor surge currents	Select IPD60N10S412ATMA1 when ≥40 A RMS current and <15 mΩ R_DS(on) are required.

Compared with STP60NF10 and IRF540NPBF, IPD60N10S412ATMA1 delivers superior power density via lower R_DS(on), lower Q_g, and SMT-compatible thermal performance-enabling smaller PCB area and higher efficiency in compact 48 V power stages.

Availability

IPD60N10S412ATMA1 is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for IPD60N10S412ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 4 product line, engineered specifically for high-efficiency, high-current switching in industrial power conversion and motor control applications.

FAQ

What is the maximum pulsed drain current (I_DM) for IPD60N10S412ATMA1?

The maximum pulsed drain current is 240 A, specified at T_C = 25°C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating supports short-duration motor startup surges and fault transients without device failure, provided PCB layout maintains low source inductance and thermal mass limits junction temperature rise.

Does IPD60N10S412ATMA1 require a gate resistor for stability?

Yes-a 10 Ω to 22 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance. This prevents spurious turn-on due to dv/dt coupling and ensures clean switching edges, especially at switching frequencies above 100 kHz in hard-switched topologies.

Can IPD60N10S412ATMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Thermal and gate drive imbalance must be minimized: use identical gate resistors, Kelvin source connections, and shared heatsink mounting. Parallel operation increases current capacity but does not linearly scale R_DS(on) due to threshold voltage spread; derate total current by 15% for reliability.

Is the drain tab of IPD60N10S412ATMA1 electrically isolated?

No-the drain tab is internally connected to the drain terminal (Pin 3) and is not insulated. It must be mounted on a PCB copper pour or heatsink that is electrically tied to the drain net. Electrical isolation requires an insulating thermal pad or ceramic substrate, which adds ~0.5 K/W to R_thJC.

IPD60N10S412ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12.2mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD60N10S412ATMA1 FAQ

1.How can I place an order for IPD60N10S412ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60N10S412ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60N10S412ATMA1 reliable?

The price and inventory of IPD60N10S412ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60N10S412ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60N10S412ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60N10S412ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60N10S412ATMA1?

IPD60N10S412ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60N10S412ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60N10S412ATMA1?

For technical support, including IPD60N10S412ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60N10S412ATMA1 requirements.

6.How does Aetrix verify that IPD60N10S412ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60N10S412ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60N10S412ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60N10S412ATMA1?

All IPD60N10S412ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60N10S412ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60N10S412ATMA1 part is unused and in its original packaging.

Return procedure for IPD60N10S412ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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