Infineon Technologies IPD60R180C7ATMA1

Overview

IPD60R180C7ATMA1 from Infineon Technologies is a 600 V, 180 mΩ superjunction N-channel power MOSFET in PG-TO252-3 (DPAK) package, featuring R_DS(on) × E_oss and R_DS(on) × Q_g figures of merit optimized for high-efficiency PFC and LLC resonant converters. It delivers 22 A continuous drain current at T_j < 150°C, 45 A pulsed current, and supports dv/dt ruggedness up to 120 V/ns-enabling robust hard- and soft-switching operation in server and telecom SMPS.

For engineers reviewing the IPD60R180C7ATMA1 datasheet, IPD60R180C7ATMA1 pinout, IPD60R180C7ATMA1 application, or IPD60R180C7ATMA1 equivalent, key selection criteria include its 2.7 µJ E_oss at 400 V, 24 nC total gate charge, 350 A/µs body diode di/dt rating, and JEDEC-qualified industrial reliability-critical for high-power, high-frequency switching stages.

Technical Context

This CoolMOS™ C7 device implements a superjunction cell structure with optimized charge balancing, enabling sub-1 Ω·mm² R_DS(on)·A performance. Its low effective output capacitance (Co(er) = 34 pF) and fast switching dynamics (t_r = 7 ns, t_f = 6 ns) reduce turn-on and turn-off losses in high-frequency topologies.

The integrated body diode exhibits 280 ns reverse recovery time and 2.6 µC Q_rr, supporting ZVS-capable LLC designs while maintaining 20 V/ns reverse dv/dt immunity. Gate plateau voltage is fixed at 5.0 V, ensuring stable Miller region control under varying drive conditions.

Key Specifications

Pinout & Package

IPD60R180C7ATMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain tab for enhanced thermal dissipation. The package features gull-wing leads and is RoHS-compliant and MSL1 reflow-rated to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP60N180 and IPP60R180C7, IPD60R180C7ATMA1 provides superior thermal resistance (1.832 °C/W R_thJC) and surface-mount compatibility-making it optimal for high-volume, high-efficiency server and telecom power supplies where board-level thermal design and assembly automation are critical.

Availability

IPD60R180C7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar DC/DC converters requiring stable component supply, JEDEC-qualified industrial reliability, and high-frequency switching capability.

Supply support for IPD60R180C7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C7 product line was engineered specifically for high-efficiency, high-power-density switched-mode power supplies in computing, telecom, and renewable energy systems-targeting best-in-class R_DS(on) × E_oss and dv/dt ruggedness.

FAQ

What is the maximum continuous drain current for IPD60R180C7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 8 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This value reflects thermal derating due to reduced heat dissipation at elevated case temperatures and must be validated against actual PCB layout and cooling conditions.

Does IPD60R180C7ATMA1 include an integrated body diode, and what are its key recovery characteristics?

Yes, it features an internal body diode with 280 ns reverse recovery time (t_rr) and 2.6 µC reverse recovery charge (Q_rr) at V_R = 400 V, I_F = 5.3 A, and di_F/dt = 100 A/µs. These values are measured per JEDEC standard test conditions and support ZVS operation in resonant topologies.

Can IPD60R180C7ATMA1 be paralleled with identical units, and what layout guidance applies?

Yes, parallel operation is supported but requires individual gate ferrite beads or separate totem-pole drivers to prevent oscillation and current imbalance. Layout must ensure symmetrical trace length, identical thermal coupling, and independent Kelvin source connections to avoid gate loop instability.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 3.0 V to 4.0 V at T_j = 25°C, with typical value 3.5 V. This tight threshold ensures consistent turn-on behavior across temperature and batch, allowing 10 V gate drive to fully enhance the channel while avoiding overvoltage stress beyond the ±20 V static rating.