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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R180P7ATMA1

Name: IPD60R180P7ATMA1
Brand: Infineon Technologies
SKU: IPD60R180P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R180P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R180P7ATMA1.pdf

Description:: MOSFET N-CH 600V 18A TO252-3

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Product details

Overview

IPD60R180P7ATMA1 from Infineon Technologies is a 600 V, 180 mΩ superjunction N-channel power MOSFET in DPAK (PG-TO252-3) package, featuring integrated body diode and ESD protection. It delivers 53 A pulsed drain current, 25 nC total gate charge, and 2.9 µJ output switching energy at 400 V-optimized for PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPD60R180P7ATMA1 datasheet, IPD60R180P7ATMA1 pinout, IPD60R180P7ATMA1 application, or IPD60R180P7ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, di_F/dt ruggedness up to 900 A/µs, low ringing tendency in hard-switched topologies, and JEDEC industrial qualification with 150 °C max junction rating.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure enabling simultaneous reduction of conduction and switching losses. Its 180 mΩ R_DS(on) at 10 V_GS and 25 nC Q_g support high-frequency operation while maintaining robustness against hard commutation and dv/dt stress up to 80 V/ns.

The integrated body diode exhibits 900 A/µs reverse recovery di_F/dt capability and 175 ns t_rr, validated under 400 V reverse bias and 100 A/µs diF/dt test conditions. ESD robustness exceeds 2 kV HBM across all pins, enabled by on-chip protection structures.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for primary-side switching in 400 V DC-link applications
R_DS(on),max	180 mΩ at T_j = 150 °C - enables compact thermal design in 100–300 W PFC stages
Q_g,typ	25 nC - reduces gate drive power loss and simplifies driver selection for 100–300 kHz operation
E_oss @ 400 V	2.9 µJ - lowers turn-off loss and improves efficiency in soft-switched LLC converters
di_F/dt	900 A/µs - ensures reliable body diode commutation in continuous conduction mode (CCM) PFC
T_j,max	150 °C - supports industrial ambient operation without derating in enclosed server power supplies
R_thJC	1.74 °C/W - allows direct heatsinking via exposed drain tab for <10 W conduction loss dissipation

Pinout & Package

IPD60R180P7ATMA1 uses PG-TO252-3 (DPAK) package with exposed drain tab for thermal enhancement. Pin 1 is Gate, Pin 2 is Drain (connected to tab), Pin 3 is Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; 11 Ω internal gate resistance limits ringing
Pin 2 (Drain) / Tab	High-voltage power input	Exposed copper tab provides low-inductance, low-thermal-resistance path to heatsink
Pin 3 (Source)	Power return and reference	Serves as local ground reference for gate drive; connects to PCB source plane

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated for both CCM PFC and resonant LLC due to 900 A/µs di_F/dt and 80 V/ns dv/dt ruggedness
Low switching loss architecture	2.9 µJ E_oss at 400 V enables >98% efficiency in 200 kHz+ PFC designs
ESD-protected gate	2 kV HBM rating eliminates need for external gate protection in automated assembly
Thermal performance	1.74 °C/W R_thJC supports 72 W power dissipation at T_C = 25 °C with minimal heatsink area

Applications

Server Power Supply PFC Stage

Telecom Rectifier Module

Use Scenario: Active front-end boost converter operating at 100–200 kHz in 1U 80 PLUS Titanium PSUs.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 12 A RMS input current and 400 V DC-link voltage.

Use Value: 180 mΩ R_DS(on) and 25 nC Q_g reduce conduction + switching losses by 12% vs. P6 generation, enabling 50 °C case temperature rise at full load.

Use Scenario: 3 kW distributed power architecture rectifier with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: High-reliability switching element in high-dv/dt, high-di/dt line-commutated environment.

Use Value: 900 A/µs di_F/dt rating prevents failure during phase-shift transitions; JEDEC industrial qualification ensures 10-year field life.

LCD TV Backlight Inverter

Industrial UPS Inverter Stage

Use Scenario: Resonant half-bridge driving CCFL or LED backlight with variable frequency control.

IC Role / Device Role / Timing Role: Low-loss, low-noise switching device in ZVS-operated resonant tank.

Use Value: 2.9 µJ E_oss minimizes turn-off loss at 300–500 kHz, reducing EMI filter size and audible noise.

Use Scenario: 10 kVA online UPS inverter bridge with 16 kHz PWM and active clamping.

IC Role / Device Role / Timing Role: Main power switch subjected to repetitive unclamped inductive switching stress.

Use Value: 56 mJ single-pulse avalanche energy rating withstands transient overloads without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099P7	99 mΩ R_DS(on), same 600 V rating, higher Q_g (42 nC)	Better conduction loss but higher gate drive loss above 150 kHz	Select when thermal budget favors lower R_DS(on) and switching frequency ≤120 kHz
STP60N120	120 mΩ R_DS(on), 650 V rating, no integrated ESD diode	Higher avalanche ruggedness (120 mJ E_AS) but requires external gate protection	Select for ultra-rugged industrial motor drives where ESD risk is mitigated by board-level design

Compared with IPW60R099P7 and STP60N120, IPD60R180P7ATMA1 offers optimal balance of conduction loss, switching loss, and ease of use-ideal for cost-sensitive, high-volume PFC and resonant converter designs requiring JEDEC industrial qualification and no external ESD components.

Availability

IPD60R180P7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and industrial UPS systems requiring stable component supply, JEDEC-qualified reliability, and DPAK thermal performance.

Supply support for IPD60R180P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion in computing, telecom, and industrial power supplies, emphasizing reduced system size, simplified thermal design, and robust operation across hard- and soft-switching topologies.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω external gate resistor is validated per datasheet test conditions (td(on)/td(off) measurements). Values up to 22 Ω maintain safe dv/dt control without compromising turn-on loss; exceeding 33 Ω increases switching time beyond 100 ns and risks shoot-through in half-bridge configurations.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to 13 V gate drive and does not require negative turn-off bias. Its 3.5 V typical threshold voltage and 5.2 V gate plateau ensure clean turn-on even with 10 V logic drivers, eliminating need for bipolar gate supplies.

Can IPD60R180P7ATMA1 be paralleled for higher current capacity?

Yes, but only with gate ferrite beads (100–220 Ω impedance at 10 MHz) on each MOSFET's gate line to suppress oscillation. Parallel operation also requires matched layout symmetry, identical gate drive routing, and thermal coupling via shared heatsink to avoid current imbalance.

Is the drain tab electrically isolated from other pins?

No. The drain tab is internally connected to Pin 2 (Drain) and must be electrically isolated from the heatsink using insulating thermal pads or ceramic washers. Failure to isolate will short the drain to chassis ground and destroy the device during operation.

IPD60R180P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1081 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 72W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R180P7ATMA1 FAQ

1.How can I place an order for IPD60R180P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R180P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R180P7ATMA1 reliable?

The price and inventory of IPD60R180P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R180P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R180P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R180P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R180P7ATMA1?

IPD60R180P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R180P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R180P7ATMA1?

For technical support, including IPD60R180P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R180P7ATMA1 requirements.

6.How does Aetrix verify that IPD60R180P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R180P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R180P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R180P7ATMA1?

All IPD60R180P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R180P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R180P7ATMA1 part is unused and in its original packaging.

Return procedure for IPD60R180P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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