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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R1K0CEAUMA1

Name: IPD60R1K0CEAUMA1
Brand: Infineon Technologies
SKU: IPD60R1K0CEAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R1K0CEAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R1K0CEAUMA1.pdf

Description:: MOSFET N-CH 600V 6.8A 61W TO252

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Product details

Overview

IPD60R1K0CEAUMA1 from Infineon Technologies is a 600 V, 1.0 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency, cost-sensitive hard-switching and resonant PFC/PWM stages in consumer lighting and adapter applications.

For engineers reviewing the IPD60R1K0CEAUMA1 datasheet, IPD60R1K0CEAUMA1 pinout, IPD60R1K0CEAUMA1 application, or IPD60R1K0CEAUMA1 equivalent, key selection criteria include its 13 nC total gate charge, 1.3 µJ E_oss at 400 V, 6.8 A continuous drain current at T_C = 25 °C, and robust 50 V/ns dv/dt ruggedness in standard-grade industrial operation.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) of 13 Ω·nC and ultra-low E_oss, supporting high-frequency switching up to 100 kHz in discontinuous conduction mode (DCM) PFC and quasi-resonant flyback topologies.

It features a 5.4 V gate plateau voltage and 1.5 nC gate-to-source charge, simplifying gate drive design with standard 12 V logic-level drivers while maintaining high commutation ruggedness-evidenced by 46 mJ single-pulse avalanche energy and 500 A/µs diode di/dt rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports full mains input range (e.g., 375 V DC bus after bridge rectification in universal-input 85–265 V AC systems)
R_DS(on), max	1.00 Ω @ T_j = 150 °C - enables low conduction loss in 6.8 A continuous operation at elevated junction temperature
Q_g, typ	13 nC - reduces gate drive power and allows use of low-cost, low-current gate drivers (e.g., 1 A peak)
E_oss @ 400 V	1.3 µJ - minimizes turn-off switching loss in hard-switched converters operating near 400 V DC bus
I_D, cont	6.8 A @ T_C = 25 °C - suitable for 30–60 W PFC stages and 20–40 W QR flyback adapters
dv/dt ruggedness	50 V/ns - ensures reliable operation without spurious turn-on in high-noise, high-dV/dt environments (e.g., boost PFC)
Thermal R_thJC	2.06 °C/W - enables efficient heat transfer to PCB copper pour or heatsink in DPAK footprint

Pinout & Package

IPD60R1K0CEAUMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package measures 6.5 mm × 6.2 mm × 2.3 mm and is RoHS-compliant with halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤20 V static bias; 16 Ω internal gate resistance limits ringing
Pin 2 (Drain)	High-side power switch node	Connected to exposed metal tab; carries full load current and must be routed over large copper area for thermal dissipation
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate driver; low-inductance layout critical to prevent shoot-through during switching

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	13 Ω·nC - directly enables >94% efficiency in 30 W adapter PFC stage at 65 kHz
High commutation ruggedness	46 mJ single-pulse avalanche energy - eliminates need for external snubbers in non-isolated boost converters
Easy gate drive compatibility	5.4 V gate plateau and 1.5 nC Q_gs - supports direct drive from UC3854, ICE2PCS01, or similar PFC controllers
Standard-grade qualification	T_j = –40 to +150 °C operation - certified for indoor lighting and consumer adapter applications without automotive stress screening
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets IEC 61249-2-21 and JEDEC J-STD-020 reflow requirements

Applications

LED Driver Power Stage

Universal Input Adapter PFC

Use Scenario: Constant-current LED driver for indoor downlight modules with 85–265 V AC input and 30–45 W output.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC stage operating at 65 kHz.

Use Value: 1.0 Ω R_DS(on) and 13 nC Q_g reduce total losses to <1.2 W at full load, enabling passive cooling and >93% system efficiency.

Use Scenario: Compact 36 W USB-C PD adapter with active PFC + QR flyback secondary.

IC Role / Device Role / Timing Role: Primary-side switch in DCM boost PFC controller (ICE2PCS01) with 100 kHz switching frequency.

Use Value: 1.3 µJ E_oss at 400 V cuts turn-off loss by 35% vs. legacy 600 V SJ-MOSFETs, improving light-load efficiency compliance.

LCD TV Backlight Inverter

PC Silver Box Main Switch

Use Scenario: Resonant half-bridge inverter driving CCFL or edge-lit LED backlight in 32″ LCD TVs.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter operating at 250–500 kHz with ZVS.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during fast ZVS transitions; 2.06 °C/W R_thJC sustains 12 A pulsed current without derating.

Use Scenario: Main power switch in ATX PC silver box SMPS using active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side switch handling 300–400 V DC bus with 50–100 kHz PWM duty cycling.

Use Value: 6.8 A continuous rating and 4.8 A diode forward current support 300 W continuous output with margin for transient surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPU60R1K0CE	Same die, PG-TO251 (IPAK) package with isolated leadframe; R_thJC = 2.2 °C/W vs. 2.06 °C/W	Requires through-hole mounting; slightly lower thermal performance but higher mechanical stability in high-vibration environments	Select for legacy board designs with IPAK footprint or where manual assembly is preferred
STP60N1F10	600 V, 1.0 Ω, but Q_g = 22 nC and E_oss = 2.8 µJ - higher switching loss and slower turn-off	Compatible in same PFC topologies but requires larger heatsink and gate driver capable of 2 A peak current	Choose only if supply chain constraints preclude Infineon parts; expect ~1.5% lower full-load efficiency

Compared with IPU60R1K0CE, IPD60R1K0CEAUMA1 offers better thermal resistance and SMT compatibility; versus STP60N1F10, it delivers significantly lower gate drive loss and faster switching, enabling smaller magnetics and higher power density in space-constrained adapters.

Availability

IPD60R1K0CEAUMA1 is available at Aetrix Electronics and suitable for LED driver power stages, universal input adapter PFC circuits, and LCD TV backlight inverters requiring stable component supply across multi-year production cycles.

Supply support for IPD60R1K0CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the CoolMOS™ CE family-a cost-optimized superjunction platform targeting high-efficiency, high-volume consumer and lighting applications where price-performance balance is critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 12.2 Ω gate resistor is used in the datasheet's switching time test conditions (V_DD = 400 V, I_D = 1.9 A). For 6.8 A operation, values between 10 Ω and 22 Ω maintain safe dV/dt control while limiting peak gate current to <1 A with 12 V drive. Higher values increase switching loss; lower values risk overshoot and EMI.

Can IPD60R1K0CEAUMA1 be paralleled in high-current PFC designs?

Yes, but with strict layout controls: individual 100 Ω ferrite beads on each gate line and matched gate trace lengths are required per Infineon's application note AN2015-04. Parallel operation also demands identical source inductance and thermal coupling to avoid current imbalance above 4 A per device.

Does this MOSFET include an integrated body diode suitable for synchronous rectification?

No-it contains a standard fast-recovery body diode (t_rr = 220 ns, Q_rr = 1.5 µC), not a low-Q_rr synchronous rectifier diode. It is not rated for reverse conduction in SR configurations; external Schottky or dedicated SR controllers are required for that function.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA curve (Figure 3) limits continuous operation to ≤3.2 A at 400 V V_DS. Pulse operation up to 12 A is allowed for ≤100 µs at this temperature, provided single-pulse avalanche energy remains below 46 mJ and thermal transients stay within Z_thJC limits shown in Diagram 4.

IPD60R1K0CEAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 61W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-344

IPD60R1K0CEAUMA1 FAQ

1.How can I place an order for IPD60R1K0CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R1K0CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R1K0CEAUMA1 reliable?

The price and inventory of IPD60R1K0CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R1K0CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R1K0CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R1K0CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R1K0CEAUMA1?

IPD60R1K0CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R1K0CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R1K0CEAUMA1?

For technical support, including IPD60R1K0CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R1K0CEAUMA1 requirements.

6.How does Aetrix verify that IPD60R1K0CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R1K0CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R1K0CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R1K0CEAUMA1?

All IPD60R1K0CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R1K0CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R1K0CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD60R1K0CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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