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Infineon Technologies IPD60R1K5PFD7SAUMA1

Part No.:
IPD60R1K5PFD7SAUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R1K5PFD7SAUMA1.pdf
Description:
MOSFET N-CH 600V 3.6A TO252
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,422

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Product details

Overview

IPD60R1K5PFD7SAUMA1 from Infineon Technologies is a 600 V, 1.5 Ω (max) superjunction MOSFET in DPAK package with integrated fast body diode and ESD protection, optimized for ZVS topologies in high-density chargers, adapters, and lighting drivers. It delivers 6.0 A pulsed drain current, 0.5 µJ Eoss at 400 V, and 1300 A/µs diF/dt capability.

For engineers reviewing the IPD60R1K5PFD7SAUMA1 datasheet, IPD60R1K5PFD7SAUMA1 pinout, IPD60R1K5PFD7SAUMA1 application, or IPD60R1K5PFD7SAUMA1 equivalent, key selection criteria include RDS(on) temperature stability, low gate charge (4.6 nC), fast diode recovery (40–59 ns trr), and rugged commutation performance in resonant SMPS designs.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction (SJ) structure enabling high-voltage blocking (600 V) with low conduction loss (RDS(on) ≤ 1.5 Ω at 150 °C) and reduced switching energy (Eoss = 0.5 µJ @ 400 V). Its integrated body diode features 1300 A/µs diF/dt rating and 40–59 ns reverse recovery time - critical for hard- and soft-switched converters.

The MOSFET supports gate drive with VGS(th) = 3.5–4.5 V and plateau voltage of 5.6 V, ensuring stable turn-on under varying conditions. Thermal resistance RthJC = 5.62 °C/W enables efficient heat transfer to PCB copper, while its DPAK package (PG-TO252-3) provides robust mechanical mounting and solderability per MSL3.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - Supports primary-side switching in universal-input offline SMPS up to 400 V DC bus with margin.
RDS(on), max 1.500 Ω @ Tj = 150 °C - Enables low conduction loss in compact, thermally constrained adapter PCB layouts.
Qg, typ 4.6 nC - Reduces gate driver power demand and enables efficient operation at >100 kHz switching frequencies.
Eoss 0.5 µJ @ 400 V - Low output capacitance energy minimizes turn-off losses in ZVS and LLC resonant converters.
diF/dt 1300 A/µs - Ensures reliable commutation without oscillation or shoot-through in high-dV/dt half-bridge configurations.
trr 40–59 ns - Fast body diode recovery reduces switching node ringing and EMI in high-frequency flyback and QR PSR designs.
Tj max 150 °C - Allows sustained operation in sealed, convection-limited consumer power supplies without active cooling.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, with exposed drain tab for thermal conduction. Pin 1: Gate; Pin 2: Drain (tab-connected); Pin 3: Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal Receives 10 V logic-level gate drive; threshold 3.5–4.5 V ensures compatibility with standard PWM controllers.
Pin 2 (Drain / Tab) High-voltage power input Exposed metal tab electrically connected to drain; must be isolated from heatsink unless referenced to same potential.
Pin 3 (Source) Power return and reference Serves as local ground reference for gate drive; connects to source of synchronous rectifier or controller IC.

Key Features

Feature Design Value
Superjunction architecture Enables 600 V breakdown with RDS(on) × Qg FOM < 6.9 Ω·nC - balances efficiency and switching speed in cost-sensitive SMPS.
Integrated fast body diode 1300 A/µs diF/dt and 40–59 ns trr support ZVS operation without external snubbers in resonant topologies.
ESD protection HBM Class 2 (≥2 kV) built-in zener diode eliminates need for external gate protection in automated assembly lines.
Thermal design enablement RthJC = 5.62 °C/W allows direct thermal coupling to 6 cm² copper pour - simplifies thermal layout for slim AC/DC adapters.

Applications

USB-C PD Charger LED Driver (Dimmable)

Use Scenario: 65 W USB-C Power Delivery adapter using QR flyback topology with primary-side regulation.

IC Role / Device Role: Primary-side high-voltage switch handling 400 V DC bus and delivering 3.6 A continuous drain current.

Use Value: Low Eoss (0.5 µJ) and fast diode recovery reduce switching losses and improve light-load efficiency to meet DoE Level VI.

Use Scenario: 40 W dimmable LED driver with TRIAC-dimmable input and constant-current output.

IC Role / Device Role: High-side switch in buck-boost PFC stage operating at 65 kHz with 600 V blocking requirement.

Use Value: 1300 A/µs diF/dt rating prevents commutation failure during phase-cut dimmer transitions, improving reliability.

BLDC Motor Inverter Industrial AC/DC PSU

Use Scenario: 24 V, 150 W BLDC motor control module with integrated inverter stage in compact enclosure.

IC Role / Device Role: Low-side switch in 3-phase inverter leg, leveraging fast body diode for freewheeling current path.

Use Value: Integrated ESD diode (HBM Class 2) withstands board-level ESD events during motor startup transients.

Use Scenario: 120 W industrial AC/DC power supply with dual-output (12 V/5 V) and wide ambient temperature range (−40 to +85 °C).

IC Role / Device Role: Primary switch in active-clamp forward converter, rated for 150 °C junction temperature.

Use Value: RDS(on) drift < 2.9× from 25 °C to 150 °C ensures stable power delivery across full temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP60N1F5 RDS(on) = 1.5 Ω @ 100 °C (not 150 °C); Qg = 5.2 nC; no integrated ESD diode Lacks HBM Class 2 ESD protection; requires external gate clamp; higher gate charge increases driver loss Prefer when gate drive circuit already includes robust clamping and thermal margin exceeds 100 °C.
IPP60R1K5PFD7 Same die, TO-220FP package; RthJC = 1.3 °C/W; higher Ptot = 104 W but larger footprint Requires heatsink; unsuitable for ultra-slim designs; better for high-power density industrial PSUs Select only when thermal budget permits TO-220FP mounting and board space allows larger outline.

Compared with STP60N1F5 and IPP60R1K5PFD7, IPD60R1K5PFD7SAUMA1 uniquely combines DPAK form factor, 150 °C-rated RDS(on), integrated ESD protection, and ZVS-optimized diode - making it optimal for space-constrained, high-volume consumer power supplies.

Availability

IPD60R1K5PFD7SAUMA1 is available at Aetrix Electronics and suitable for USB-C PD chargers, LED lighting drivers, BLDC motor inverters, and industrial AC/DC power supplies requiring stable component supply and long-term lifecycle continuity.

Supply support for IPD60R1K5PFD7SAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ PFD7 family - engineered specifically for cost-sensitive, high-efficiency resonant and quasi-resonant SMPS in consumer electronics, emphasizing ease-of-use, thermal robustness, and ZVS compatibility.

FAQ

What is the maximum continuous drain current for IPD60R1K5PFD7SAUMA1 at 100 °C case temperature?

The maximum continuous drain current is 2.2 A at TC = 100 °C, as specified in Table 2 of the datasheet. This value is limited by junction temperature (Tj ≤ 150 °C) and thermal resistance (RthJC = 5.62 °C/W), not by package current rating alone.

Does IPD60R1K5PFD7SAUMA1 require an external gate resistor for safe operation in ZVS circuits?

Yes - the datasheet recommends using ferrite beads on the gate or separate totem-pole drivers when paralleling devices. For single-device ZVS operation, a 10.2 Ω gate resistor is used in characterization (Table 9), and values between 5–15 Ω are typical to balance switching speed and ringing suppression.

How does the integrated body diode differ from standard MOSFET body diodes in terms of recovery behavior?

It exhibits 40–59 ns reverse recovery time (trr) and 1300 A/µs diF/dt rating - significantly faster and more rugged than conventional planar MOSFET diodes. This enables clean commutation in high-dV/dt ZVS topologies without external snubbers or diode replacement.

Is IPD60R1K5PFD7SAUMA1 qualified for automotive applications?

No - it is qualified per JEDEC standards for industrial and consumer use only. It lacks AEC-Q101 qualification, has no automotive-grade screening, and its 150 °C Tj max aligns with industrial (not automotive) thermal requirements. Automotive designs require AEC-Q101-certified variants like IPA60R1K5PFD7S.

IPD60R1K5PFD7SAUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ PFD7
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:
4.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:
4.6 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
169 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
22W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-344

IPD60R1K5PFD7SAUMA1 FAQ

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Please submit a Request for Quotation (RFQ) for IPD60R1K5PFD7SAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IPD60R1K5PFD7SAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R1K5PFD7SAUMA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R1K5PFD7SAUMA1 transactions.

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IPD60R1K5PFD7SAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R1K5PFD7SAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R1K5PFD7SAUMA1?

For technical support, including IPD60R1K5PFD7SAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R1K5PFD7SAUMA1 requirements.

6.How does Aetrix verify that IPD60R1K5PFD7SAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R1K5PFD7SAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R1K5PFD7SAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R1K5PFD7SAUMA1?

All IPD60R1K5PFD7SAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R1K5PFD7SAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R1K5PFD7SAUMA1 part is unused and in its original packaging.

Return procedure for IPD60R1K5PFD7SAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD60R1K5PFD7SAUMA1 Tags

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