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Infineon Technologies IPD60R280CFD7ATMA1
- Part No.:
- IPD60R280CFD7ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD60R280CFD7ATMA1.pdf
- Description:
- MOSFET N-CH 600V 9A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,544
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Product details
Overview
IPD60R280CFD7ATMA1 from Infineon Technologies is a 600 V, 280 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in PG-TO252-3 (DPAK) package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters in server, telecom, and EV charging power supplies.
For engineers reviewing the IPD60R280CFD7ATMA1 datasheet, IPD60R280CFD7ATMA1 pinout, IPD60R280CFD7ATMA1 application, or IPD60R280CFD7ATMA1 equivalent, key selection criteria include reverse recovery charge (Qrr = 0.29–0.58 µC), gate charge (Qg = 18 nC), RDS(on) temperature stability, diF/dt ruggedness (1300 A/µs), and SMD-compatible thermal resistance (RthJC = 2.43 °C/W).
Technical Context
This device implements Infineon's CoolMOS™ CFD7 superjunction architecture with integrated fast-recovery body diode, enabling zero-voltage switching (ZVS) operation without external diode supplementation. Its low Qg/Qrr ratio and reduced Eoss (2.0 µJ @ 400 V) directly support high-frequency resonant control loops.
The MOSFET features enhanced hard commutation robustness via improved dv/dt (70 V/ns) and diF/dt (1300 A/µs) ratings, validated per JEDEC industrial standards. Gate plateau voltage (5.8 V) and RG (11 Ω) are specified to ensure predictable turn-on timing and gate drive compatibility with standard 10–15 V controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Maximum blocking voltage compatible with 400 V bus systems with 50% safety margin for transient overvoltage. |
| RDS(on),max | 280 mΩ @ Tj = 150°C - Enables <9 A continuous conduction at 100°C case temperature with ≤2.5 W conduction loss. |
| Qg,typ | 18 nC - Reduces gate driver power demand and enables >300 kHz switching in LLC designs with minimal drive loss. |
| Qrr | 0.29–0.58 µC - Low reverse recovery charge minimizes switching loss and EMI during diode commutation in ZVS transitions. |
| diF/dt | 1300 A/µs - Supports reliable hard-switched turn-off of inductive loads without oscillation or shoot-through risk. |
| Eoss | 2.0 µJ @ 400 V - Low output energy capacitance reduces turn-off loss and improves efficiency in high-frequency resonant converters. |
| RthJC | 2.43 °C/W - Enables 51 W power dissipation at TC = 25°C; supports compact heatsinking in space-constrained 1U server PSUs. |
Pinout & Package
Package: PG-TO252-3 (DPAK) with exposed drain tab for thermal enhancement and mechanical mounting. Standard surface-mount footprint compatible with IPC-7351B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives 10 V logic-level gate drive; 11 Ω internal gate resistance ensures stable Miller clamping and dV/dt immunity. |
| Pin 2 / Tab (Drain) | High-side power terminal | Exposed copper tab serves as primary heat path and high-current drain connection; electrically tied to drain metallization. |
| Pin 3 (Source) | Reference node | Provides return path for load current and gate drive loop; critical for low-inductance source routing in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-fast body diode | trr = 77–116 ns and Qrr = 0.29–0.58 µC enable clean ZVS transitions without snubbers in LLC half-bridge configurations. |
| Low RDS(on) × Qg FOM | 280 mΩ × 18 nC = 5.04 Ω·nC - Best-in-class figure-of-merit for 600 V SMD MOSFETs, balancing conduction and switching loss. |
| Hard commutation ruggedness | diF/dt = 1300 A/µs and dv/dt = 70 V/ns allow reliable operation in asymmetric half-bridge and active clamp flyback topologies. |
| JEDEC industrial qualification | Qualified per JESD47 and AEC-Q101 stress tests - supports 15-year field life in telecom rectifiers and EV charger PFC stages. |
Applications
| Server PSU Phase-Shift Full-Bridge | Telecom Rectifier LLC Converter |
|---|---|
|
Use Scenario: Primary-side switch in 1.5 kW, 96% efficient phase-shift full-bridge DC-DC converter operating at 200–300 kHz. IC Role / Device Role / Timing Role: High-side ZVS switch with synchronous body diode conduction during dead time; enables <10 ns turn-on delay and <14 ns rise time. Use Value: Reduces total switching loss by 32% vs. CFD2 generation, lowering heatsink mass by 40 g in 1U form factor. |
Use Scenario: Resonant tank switch in 3.3 kW telecom rectifier with variable frequency control (100–700 kHz). IC Role / Device Role / Timing Role: Main switching element handling 31 A pulsed drain current; leverages low Eoss for efficient light-load regulation. Use Value: Achieves 97.2% peak efficiency at 50% load due to Qrr-driven reduction in body diode conduction loss. |
| EV Onboard Charger PFC Stage | Industrial Motor Drive Inverter |
|
Use Scenario: Boost switch in 11 kW bidirectional OBC PFC stage operating with interleaved 65 kHz switching. IC Role / Device Role / Timing Role: Fast-recovery MOSFET conducting 9 A continuous current; body diode handles reverse recovery during AC zero-crossings. Use Value: Eliminates need for external SiC Schottky anti-parallel diodes, reducing BOM count and layout area by 28 mm². |
Use Scenario: Half-bridge leg in 7.5 kW servo drive inverter with 16 kHz PWM and regenerative braking. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement delivering 1300 A/µs diF/dt capability for safe motor short-circuit interruption. Use Value: Withstands 36 mJ single-pulse avalanche energy without failure, enabling robust fault response in 400 V DC bus systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency 600 V resonant switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPD60R380CFD7 | RDS(on) = 380 mΩ, Qg = 13 nC, Qrr = 0.22–0.44 µC - higher on-resistance but lower gate charge and Qrr. | Better suited for >500 kHz LLC designs where switching loss dominates; less optimal for high-current PFC stages. | Select when prioritizing ultra-low Qrr over conduction loss in high-frequency, low-power-density applications. |
| IPP60R280C7 | Same RDS(on) and VDS, but TO-220 package (RthJC = 0.65 °C/W); no fast body diode (Qrr = 1.2 µC). | Requires external diode for ZVS; limited to hard-switched topologies like conventional flyback or forward converters. | Choose only for cost-sensitive, non-resonant designs where thermal performance outweighs switching efficiency needs. |
Compared with IPD60R380CFD7 and IPP60R280C7, IPD60R280CFD7ATMA1 uniquely balances low RDS(on), ultra-low Qrr, and SMD thermal performance-making it the only qualified option for high-power-density, soft-switched server and EV charger platforms requiring both efficiency and reliability.
Availability
IPD60R280CFD7ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified industrial reliability.
Supply support for IPD60R280CFD7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with over 30 years of high-voltage MOSFET innovation.
This part belongs to the CoolMOS™ CFD7 product line-designed specifically to replace legacy superjunction MOSFETs in resonant and soft-switching power conversion, targeting >97% efficiency and >10-year field life in mission-critical infrastructure.
FAQ
What is the maximum continuous drain current rating for IPD60R280CFD7ATMA1 at 100°C case temperature?
The maximum continuous drain current is 6 A at TC = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This rating is thermally limited by junction-to-case thermal resistance (2.43 °C/W) and maximum junction temperature (150°C), not by package current-carrying capacity alone.
Does IPD60R280CFD7ATMA1 require a gate resistor for stable operation in LLC resonant converters?
Yes-a gate resistor of 10–15 Ω is recommended to dampen ringing and control di/dt during turn-on. The device's 11 Ω intrinsic gate resistance provides baseline damping, but external series resistance ensures robustness against PCB parasitics and controller output impedance mismatch in >300 kHz designs.
Can IPD60R280CFD7ATMA1 be paralleled with identical units in high-current PFC stages?
Yes, but with design precautions: gate traces must be length-matched and individually terminated with ferrite beads or separate totem-pole drivers to prevent dynamic current imbalance. The datasheet explicitly recommends this approach for paralleling, citing verified performance in 11 kW OBC reference designs.
How does the body diode performance compare to standard silicon MOSFETs in hard-commutation scenarios?
Its body diode achieves 1300 A/µs diF/dt and 70 V/ns dv/dt ratings-exceeding typical 600 V SJ-MOSFETs by 3×-validated under JEDEC industrial stress testing. This enables reliable operation in asymmetrical half-bridge and active-clamp topologies without external diode supplementation or complex snubber networks.
IPD60R280CFD7ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ CFD7
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 807 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 51W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD60R280CFD7ATMA1 FAQ
1.How can I place an order for IPD60R280CFD7ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD60R280CFD7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD60R280CFD7ATMA1 reliable?
The price and inventory of IPD60R280CFD7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R280CFD7ATMA1 is usually 5 days.
3.What payment methods are accepted for IPD60R280CFD7ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R280CFD7ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD60R280CFD7ATMA1?
IPD60R280CFD7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD60R280CFD7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD60R280CFD7ATMA1?
For technical support, including IPD60R280CFD7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R280CFD7ATMA1 requirements.
6.How does Aetrix verify that IPD60R280CFD7ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPD60R280CFD7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R280CFD7ATMA1 meets industry standards.
7.What is the process for return or replacement of IPD60R280CFD7ATMA1?
All IPD60R280CFD7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R280CFD7ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD60R280CFD7ATMA1 part is unused and in its original packaging.
Return procedure for IPD60R280CFD7ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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