Infineon Technologies IPD60R280PFD7SAUMA1

Overview

IPD60R280PFD7SAUMA1 from Infineon Technologies is a 600 V, 280 mΩ superjunction MOSFET in DPAK (PG-TO252-3) package with integrated fast body diode and ESD protection. It delivers 15.3 nC gate charge, 2.0 µJ output switching energy at 400 V, and supports 1300 A/µs diode commutation for ZVS operation in high-density power supplies. Used in slim AC-DC adapters and LED drivers requiring high efficiency above 100 kHz.

For engineers reviewing the IPD60R280PFD7SAUMA1 datasheet, IPD60R280PFD7SAUMA1 pinout, IPD60R280PFD7SAUMA1 application, or IPD60R280PFD7SAUMA1 equivalent, key selection criteria include R_DS(on) temperature stability, E_oss-driven hard-switching loss, diode dI_F/dt ruggedness, and gate drive compatibility with standard 10 V logic-level controllers.

Technical Context

This CoolMOS™ PFD7 device implements a superjunction cell structure optimized for cost-sensitive consumer power conversion. Its 600 V rating and 280 mΩ R_DS(on) balance conduction loss and switching loss at 65–135 kHz operating frequencies, while the integrated zener-protected gate enables robust 30 V dynamic gate voltage tolerance.

The fast-recovery body diode (t_rr = 71–107 ns, Q_rr = 0.19–0.39 µC) and 1300 A/µs diF/dt capability support reliable zero-voltage switching in LLC and active-clamp flyback topologies. Thermal resistance R_thJC of 2.43 °C/W allows 51 W power dissipation at T_C = 25 °C with minimal heatsinking.

Key Specifications

Pinout & Package

IPD60R280PFD7SAUMA1 uses PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STP60N280 and IPP60R280C7, IPD60R280PFD7SAUMA1 provides superior diode ruggedness and thermal performance in surface-mount form factor-critical for ZVS-enabled, high-power-density consumer power supplies where board space and efficiency are co-constrained.

Availability

IPD60R280PFD7SAUMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, smart LED drivers, BLDC motor inverters, and industrial auxiliary power supplies requiring stable component supply and long-term production continuity.

Supply support for IPD60R280PFD7SAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ PFD7 superjunction MOSFET product line, engineered specifically for cost-optimized, high-efficiency AC-DC conversion in consumer electronics-emphasizing ease of use, ZVS compatibility, and slim-form-factor design enablement.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A 10.2 Ω gate resistor is validated in the datasheet for 400 V bus operation with 3.6 A current. For ZVS in LLC converters, values between 4.7 Ω and 12 Ω maintain optimal turn-on delay (18 ns) and minimize gate ringing while preserving diF/dt capability. Higher values increase turn-off delay and risk incomplete ZVS at light loads.

Does the integrated body diode require external snubbing in hard-switched flyback designs?

No external snubber is required for typical 65–100 kHz flyback operation due to the diode's 71–107 ns reverse recovery time and 1300 A/µs diF/dt rating. However, a 100 pF/100 Ω RC network across drain-source is recommended when operating above 150 kHz or with >10 A peak current to suppress high-frequency ringing.

Can IPD60R280PFD7SAUMA1 be paralleled for higher current capacity?

Yes, but with strict layout requirements: individual 10 Ω ferrite beads on each gate line and separate totem-pole drivers per device are mandatory per Infineon's application note AN2019-05. Without these, current imbalance exceeds 25% at full load due to gate threshold variation (3.5–4.5 V) and parasitic inductance mismatch.

What is the minimum PCB copper area needed for thermal management at 12 A continuous current?

For 12 A continuous current at T_C = 100 °C, a 6 cm² single-layer 70 µm copper area connected to the drain tab is required per the datasheet's R_thJA = 35–45 °C/W specification. This assumes vertical PCB orientation, no forced airflow, and FR4 substrate-reducing area below 4 cm² risks exceeding 150 °C junction temperature.