Infineon Technologies IPD60R600C6ATMA1
- Part No.:
- IPD60R600C6ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD60R600C6ATMA1.pdf
- Description:
- MOSFET N-CH 600V 7.3A TO252-3
- Quantity:
- Payment:

- Shipping:

Inventory:8,732
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Product details
Overview
IPD60R600C6ATMA1 from Infineon Technologies is a 600 V, 0.6 Ω RDS(on) CoolMOS™ C6 superjunction MOSFET optimized for hard-switching and resonant topologies in industrial SMPS, PFC stages, and server power supplies. It delivers 11 A continuous drain current at TC = 100 °C with ultra-low gate charge (Qg = 19.5 nC) and low Eoss (170 nJ), enabling high-efficiency, compact 1–3 kW designs.
For engineers reviewing the IPD60R600C6ATMA1 datasheet, IPD60R600C6ATMA1 pinout, IPD60R600C6ATMA1 application, or IPD60R600C6ATMA1 equivalent, key selection criteria include its 600 V VDSS, 0.6 Ω max RDS(on) at 100 °C, 19.5 nC total gate charge, 170 nJ output capacitance energy, and qualification per JEDEC JESD47 for industrial reliability.
Technical Context
This device implements Infineon's CoolMOS™ C6 technology based on superjunction architecture with optimized charge balancing and trench-gate design. It achieves low conduction loss (RDS(on) = 0.6 Ω @ 100 °C) while maintaining fast switching (tr = 12 ns, tf = 20 ns) and low Eoss (170 nJ @ 400 V).
The MOSFET supports hard-switched PFC, LLC resonant converters, and phase-shifted full-bridge topologies. Its gate threshold voltage (VGS(th) = 3.0–4.5 V) and low Qgd/Qg ratio (0.28) ensure robust noise immunity and reduced Miller-induced shoot-through risk in high-frequency operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands DC bus voltages up to 400 V AC input after rectification with margin for transients. |
| RDS(on) max | 0.6 Ω @ TJ = 100 °C - Enables low conduction loss in 11 A continuous operation without forced cooling. |
| Qg | 19.5 nC - Reduces driver power requirement and enables efficient 100–300 kHz switching in PFC and resonant converters. |
| Eoss | 170 nJ @ VDS = 400 V - Low output capacitance energy minimizes turn-on loss in hard-switched applications. |
| ID cont | 11 A @ TC = 100 °C - Supports 1.5–2.5 kW industrial power supplies with TO-252 (DPAK) thermal footprint. |
| VGS(th) | 3.0–4.5 V - Ensures clean turn-on with standard 5 V or 12 V gate drivers and resists false triggering. |
| tr/tf | 12 ns / 20 ns @ ID = 5 A - Fast switching supports high-frequency designs while limiting dv/dt stress on gate drive circuitry. |
Pinout & Package
IPD60R600C6ATMA1 is housed in a surface-mount TO-252 (DPAK) package with exposed drain pad for enhanced thermal performance. The package features gull-wing leads compatible with standard reflow soldering and provides 1.5 K/W junction-to-case thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Power return path for load current | Connected to ground or low-side reference; requires low-inductance layout to minimize switching noise. |
| Pin 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring RC snubber or gate resistor (typically 10–47 Ω) to damp ringing and control dV/dt. |
| Pin 3 (Drain) | Main high-voltage power terminal | Connected to DC bus or transformer primary; large copper pour required for thermal and current handling. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × Qg figure of merit | 11.7 Ω·nC - Improves trade-off between conduction and switching loss in high-frequency PFC stages. |
| JEDEC industrial qualification | Qualified per JESD47 - Ensures reliability under 100 °C case temperature, 1000-cycle temperature cycling, and HTRB stress. |
| Halogen-free & Pb-free construction | Meets RoHS/REACH and IPC/JEDEC J-STD-020 moisture sensitivity level 1 - Enables lead-free reflow without popcorn risk. |
| Low Eoss and Qgd/Qg ratio | Eoss = 170 nJ; Qgd/Qg = 0.28 - Reduces turn-on loss and improves stability in ZVS/ZCS topologies. |
| Optimized body diode recovery | trr = 290 ns, Qrr = 2.2 µC - Limits reverse recovery loss and EMI in bridge-leg configurations. |
Applications
| Industrial SMPS | Server Power Supplies |
|---|---|
|
Use Scenario: 2 kW front-end AC-DC converter with active PFC and LLC resonant DC-DC stage. IC Role / Device Role / Timing Role: High-side switch in boost PFC and primary-side switch in LLC half-bridge. Use Value: 0.6 Ω RDS(on) and 19.5 nC Qg enable >96% efficiency at full load while fitting within 1U rack height constraints. |
Use Scenario: 1.8 kW redundant power module for cloud data center servers. IC Role / Device Role / Timing Role: Primary-side switching transistor in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: Low Eoss (170 nJ) and fast tr/tf reduce switching loss during zero-voltage switching transitions, improving thermal headroom. |
| Telecom Rectifiers | LED Streetlight Drivers |
|
Use Scenario: 3 kW telecom rectifier with dual interleaved PFC and forward DC-DC conversion. IC Role / Device Role / Timing Role: Interleaved PFC switch handling 15 A peak current per phase at 65 kHz. Use Value: 11 A ID rating and 1.5 K/W RthJC allow parallel-free operation with natural convection cooling in enclosed cabinets. |
Use Scenario: 150 W isolated flyback driver for outdoor LED street lighting with wide AC input (90–305 VAC). IC Role / Device Role / Timing Role: Primary-side power switch operating in quasi-resonant mode with valley switching. Use Value: 600 V VDSS and low Qg support reliable operation across universal input range while minimizing gate drive losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60N6F6 | RDS(on) = 0.65 Ω @ 100 °C; Qg = 25 nC; Eoss = 220 nJ | Higher switching loss in >150 kHz PFC; requires larger heatsink at same power density | Preferred where cost sensitivity outweighs efficiency targets and layout space permits extra thermal margin. |
| IXFH60N60X3 | RDS(on) = 0.62 Ω @ 110 °C; Qg = 22 nC; no JEDEC industrial qualification | Limited lifetime validation for 10+ year deployments in unattended infrastructure | Suitable for non-critical commercial power supplies but not recommended for telecom or industrial OEMs requiring long-term BOM stability. |
Compared with STP60N6F6 and IXFH60N60X3, IPD60R600C6ATMA1 offers the lowest RDS(on) × Qg FoM and full industrial qualification-making it optimal for space-constrained, high-reliability 1–3 kW power systems where efficiency and lifecycle assurance are prioritized.
Availability
IPD60R600C6ATMA1 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and telecom rectifiers requiring stable component supply across multi-year production cycles.
Supply support for IPD60R600C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
The CoolMOS™ C6 series targets high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial, server, and telecom infrastructure-emphasizing low-loss switching and long-term reliability under continuous thermal stress.
FAQ
What is the maximum continuous drain current for IPD60R600C6ATMA1 at 100 °C case temperature?
The maximum continuous drain current is 11 A at TC = 100 °C, verified per datasheet Rev. 2.6 test conditions using a 10 cm² 2-oz copper pad on FR-4 PCB. This rating assumes proper thermal vias and minimal ambient airflow, and derates linearly to 15.5 A at TC = 25 °C.
Does IPD60R600C6ATMA1 require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage range of 3.0–4.5 V and is fully specified for 0 V turn-off. A negative gate voltage is not required, though a small negative bias (−2 V to −5 V) may be used in noisy environments to improve noise immunity without affecting reliability.
Can IPD60R600C6ATMA1 replace older CoolMOS™ C3 or C7 devices in existing designs?
It can directly replace C3 variants with identical pinout and lower RDS(on), but C7 devices have different gate charge profiles and higher VGS(th). Layout review is required for C7 drop-in use-especially gate resistor and snubber values-to avoid oscillation due to lower Qgd and faster switching.
Is the TO-252 package of IPD60R600C6ATMA1 suitable for reflow soldering in high-volume manufacturing?
Yes. The device is qualified per IPC/JEDEC J-STD-020 Class 1 (MSL-1), supporting unlimited floor life and standard lead-free reflow profiles (peak 260 °C). The exposed drain pad must be soldered to ≥20 mm² of 2-oz copper with ≥6 thermal vias (0.3 mm diameter) for optimal thermal performance.
IPD60R600C6ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ C6
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 63W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD60R600C6ATMA1 FAQ
1.How can I place an order for IPD60R600C6ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD60R600C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD60R600C6ATMA1 reliable?
The price and inventory of IPD60R600C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R600C6ATMA1 is usually 5 days.
3.What payment methods are accepted for IPD60R600C6ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R600C6ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD60R600C6ATMA1?
IPD60R600C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD60R600C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD60R600C6ATMA1?
For technical support, including IPD60R600C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R600C6ATMA1 requirements.
6.How does Aetrix verify that IPD60R600C6ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPD60R600C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R600C6ATMA1 meets industry standards.
7.What is the process for return or replacement of IPD60R600C6ATMA1?
All IPD60R600C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R600C6ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD60R600C6ATMA1 part is unused and in its original packaging.
Return procedure for IPD60R600C6ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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