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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R950C6ATMA1

Name: IPD60R950C6ATMA1
Brand: Infineon Technologies
SKU: IPD60R950C6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R950C6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R950C6ATMA1.pdf

Description:: MOSFET N-CH 600V 4.4A TO252-3

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Product details

Overview

IPD60R950C6 from Infineon Technologies is a 600 V, 0.95 Ω R_DS(on) CoolMOS™ C6 superjunction N-channel power MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency PFC and hard-switching PWM stages. It delivers 13 nC gate charge, 1.3 µJ E_oss at 400 V, and 500 A/µs body diode di/dt, enabling compact, cooler-running server PSUs and LCD TV power supplies.

For engineers reviewing the IPD60R950C6 datasheet, IPD60R950C6 pinout, IPD60R950C6 application, or IPD60R950C6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven turn-off loss, commutation ruggedness under high di/dt, and TO-252 thermal resistance of 3.41 °C/W (junction-to-case).

Technical Context

This device implements Infineon's CoolMOS™ C6 superjunction architecture with optimized charge balancing for low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss. Its 2.5–3.5 V gate threshold voltage and 5.4 V gate plateau support robust drive margin in 12 V gate-drive systems.

The MOSFET features fully characterized reverse diode recovery (t_rr = 220 ns, Q_rr = 1.5 µC, I_rrm = 12 A) and 50 V/ns dv/dt ruggedness, making it suitable for both continuous conduction mode (CCM) PFC and resonant LLC topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input PFC stages with 20% margin against line surges
R_DS(on) max @ 150°C	2.22 Ω - defines worst-case conduction loss in thermally stressed operation
Q_g typ	13 nC - determines gate drive power and switching speed in 100–300 kHz converters
E_oss @ 400 V	1.3 µJ - directly reduces turn-off energy loss in hard-switched applications
Body diode di/dt	500 A/µs - enables reliable zero-voltage switching (ZVS) transition in resonant topologies
R_thJC	3.41 °C/W - enables 37 W continuous dissipation at T_C = 25°C in TO-252 footprint
V_GS(th)	2.5–3.5 V - ensures clean turn-on with standard 5 V logic-level drivers

Pinout & Package

IPD60R950C6 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 is Gate, Pin 2 is Drain, Pin 3 is Source - consistent with JEDEC MS-012 standard and compatible with automated SMT assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V drive to achieve 0.86 Ω R_DS(on) at 25°C; requires <12.2 Ω series gate resistor for stable switching
Pin 2 (Drain)	High-voltage power terminal	Connected to bulk capacitor or transformer primary; electrically tied to exposed copper pad for thermal conduction
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FOM	Enables >96% efficiency in 200 W–1 kW PFC stages without forced air cooling
High commutation ruggedness	Withstands 500 A/µs di/dt and 50 V/ns dv/dt without oscillation or failure in bridge-leg configurations
JEDEC industrial qualification	Validated for 150°C continuous operation and 1000-cycle temperature cycling per JESD22-A104
Pb-free & halogen-free construction	Complies with RoHS 2011/65/EU and IPC-1752A Class 1 material declarations

Applications

Server Power Supply

LCD TV Backlight Inverter

Use Scenario: Active clamp forward or LLC resonant converter in 80 PLUS Titanium PSUs.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC bus and 100–300 kHz switching.

Use Value: 1.3 µJ E_oss cuts turn-off loss by 35% vs. prior-gen SJ-MOSFETs, reducing heatsink size by 40%.

Use Scenario: Half-bridge inverter driving CCFL or LED backlight strings in 32–65 inch LCD panels.

IC Role / Device Role / Timing Role: Fast-switching power switch operating in ZVS mode with 220 ns t_rr body diode.

Use Value: 500 A/µs di/dt rating ensures reliable commutation during dead-time transitions without shoot-through risk.

Telecom Rectifier

UPS Input Stage

Use Scenario: Boost PFC stage in -48 V telecom rectifiers delivering up to 3 kW output.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch with 600 V blocking capability.

Use Value: 0.95 Ω R_DS(on) at 100°C maintains <1.8 W conduction loss at 2.8 A RMS, enabling natural convection cooling.

Use Scenario: Input rectification and boost PFC in online double-conversion UPS systems (1–10 kVA).

IC Role / Device Role / Timing Role: High-reliability main switch subjected to frequent line transients and battery backup cycles.

Use Value: 46 mJ single-pulse avalanche energy rating protects against 6 kV surge events per IEC 61000-4-5 without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB60R950C6	Same die, TO-263 (D2PAK) package with identical R_DS(on), Q_g, and E_oss	Higher thermal mass and 3.41 °C/W R_thJC suits higher-power boards with larger copper area	Select when board layout allows D2PAK footprint and higher solder joint reliability is required
IPP60R950C6	Same die, TO-220 package; R_thJC = 3.41 °C/W but lower creepage/clearance vs. TO-252	Through-hole mounting preferred for prototyping or legacy designs with manual assembly	Select when mechanical retention or serviceability outweighs SMT density advantages

Compared with IPB60R950C6 and IPP60R950C6, the IPD60R950C6 offers identical electrical performance in the smallest footprint (TO-252), enabling highest power density in space-constrained SMT designs while maintaining full thermal and avalanche robustness.

Availability

IPD60R950C6 is available at Aetrix Electronics and suitable for server power supplies, LCD TV inverters, telecom rectifiers, and UPS input stages requiring stable component supply across multi-year production cycles.

Supply support for IPD60R950C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

The CoolMOS™ C6 product line targets high-efficiency AC-DC conversion in data center, consumer, and telecom power supplies, emphasizing low-loss superjunction MOSFETs with enhanced ruggedness and ease of drive.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IPD60R950C6 supports 2.8 A continuous drain current at T_C = 100°C, as specified in Table 2 of the datasheet. This value accounts for thermal derating due to junction-to-case resistance (3.41 °C/W) and maximum junction temperature (150°C), ensuring safe operation without exceeding thermal limits in real-world PCB layouts.

Does this MOSFET require a gate resistor for stability in hard-switching applications?

Yes - a 12.2 Ω gate resistor is recommended per the test condition in Table 20 for stable switching with minimal ringing. This value balances switching speed (10 ns turn-on delay, 13 ns fall time) against gate oscillation risk, especially when driving inductive loads or paralleling multiple devices.

How does the body diode performance compare to standard silicon MOSFETs?

The IPD60R950C6 body diode achieves 220 ns reverse recovery time and 1.5 µC Q_rr at 100 A/µs diF/dt - significantly faster than planar MOSFETs. Its 500 A/µs di/dt rating enables reliable ZVS in resonant converters without external diodes, reducing system component count and EMI.

Is this part suitable for paralleling in high-current PFC designs?

Yes - the device supports paralleling with proper gate layout. Infineon recommends ferrite beads on each gate line or individual totem-pole drivers to suppress high-frequency oscillation. Matching R_DS(on) tolerance (±15%) and symmetrical PCB routing are essential to ensure current sharing within ±10% across parallel units.

IPD60R950C6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R950C6ATMA1 FAQ

1.How can I place an order for IPD60R950C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R950C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R950C6ATMA1 reliable?

The price and inventory of IPD60R950C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R950C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R950C6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R950C6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R950C6ATMA1?

IPD60R950C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R950C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R950C6ATMA1?

For technical support, including IPD60R950C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R950C6ATMA1 requirements.

6.How does Aetrix verify that IPD60R950C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R950C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R950C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R950C6ATMA1?

All IPD60R950C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R950C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R950C6ATMA1 part is unused and in its original packaging.

Return procedure for IPD60R950C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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