Infineon Technologies IPD65R380E6ATMA1

Overview

IPD65R380E6ATMA1 from Infineon Technologies is a 650 V, 11 A (continuous), 380 mΩ (R_DS(on) max) N-channel enhancement-mode CoolMOS™ E6 superjunction power MOSFET in TO-252 (DPAK) package. It delivers ultra-low switching and conduction losses for hard-switched and resonant SMPS topologies in industrial and server power supplies, with integrated avalanche ruggedness and full JEDEC industrial qualification.

For engineers reviewing the IPD65R380E6ATMA1 datasheet, IPD65R380E6ATMA1 pinout, IPD65R380E6ATMA1 application, or IPD65R380E6ATMA1 equivalent, key selection criteria include R_DS(on), Q_g, E_oss, t_r/t_f, and thermal resistance R_thJC - all critical for optimizing efficiency, thermal design, and EMI in high-frequency 650 V primary-side switching stages.

Technical Context

This CoolMOS E6 device employs Infineon's superjunction charge compensation structure with optimized cell pitch and trench gate geometry to achieve 380 mΩ R_DS(on) at 650 V while maintaining low gate charge (Q_g = 27 nC) and output charge (Q_oss = 49 nC). Its 11 A continuous drain current rating is thermally limited by R_thJC = 1.5 K/W in TO-252.

The device features fast, soft reverse recovery of its integrated body diode (t_rr = 220 ns, Q_rr = 1.2 µC), enabling reliable operation in LLC resonant converters and PFC boost stages without external diode snubbing. Its 100% avalanche-tested ruggedness supports robust hard-switching in offline adapters and telecom rectifiers.

Key Specifications

Pinout & Package

IPD65R380E6ATMA1 is housed in a surface-mount TO-252 (DPAK) package with exposed drain pad for thermal performance. The package features Pb-free plating and is halogen-free, fully qualified per JEDEC JESD47 for industrial applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Compared with STP65N6F6 and IXTH30N65X2, IPD65R380E6ATMA1 offers the best balance of low R_DS(on), low Q_g, and low E_oss - making it optimal for high-efficiency, high-frequency (>150 kHz), thermally constrained 650 V applications where both conduction and switching losses must be minimized simultaneously.

Availability

IPD65R380E6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPD65R380E6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

The CoolMOS E6 series was engineered specifically for high-efficiency, high-power-density 650 V SMPS applications - targeting next-generation server PSUs, industrial power supplies, and telecom infrastructure where reduced losses and thermal footprint are critical.

FAQ

What is the maximum recommended gate drive voltage for IPD65R380E6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the recommended operating range is 10–15 V. Driving at 10 V ensures full enhancement with margin, while 15 V maximizes dV/dt immunity without increasing gate oxide stress. Exceeding 15 V provides negligible R_DS(on) improvement but raises risk of gate oxide degradation during transients.

Can IPD65R380E6ATMA1 replace older CoolMOS E5 devices in existing designs?

Yes - it is a direct drop-in replacement for IPD65R450E5 in TO-252 packages, offering 15% lower R_DS(on) and 22% lower Q_g. Layout changes are not required, but gate resistor values may be reduced by 20–30% to maintain optimal switching speed and minimize overshoot due to faster t_r/t_f.

What PCB layout practices are essential for thermal performance?

A minimum 100 mm² exposed copper pad (2-oz copper, 70 µm thick) connected via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground plane is required to achieve the rated 11 A continuous current. The source trace must be short and wide (<5 mm length, ≥3 mm width) to limit common-source inductance and prevent gate oscillation.

Is IPD65R380E6ATMA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low E_oss (49 nJ) and fast, soft body diode (t_rr = 220 ns, Q_rr = 1.2 µC) enable reliable ZVS in LLC resonant converters up to 300 kHz. The low Q_g also reduces dead-time sensitivity, improving light-load regulation and efficiency stability across line/load variations.