Infineon Technologies IPD65R650CEAUMA1

Overview

IPD65R650CEAUMA1 from Infineon Technologies is a 650 V, 10.1 A superjunction N-channel MOSFET in DPAK (PG-TO252) package, featuring R_DS(on) = 650 mΩ (max), Q_g = 23 nC (typ), and E_oss = 2 µJ @ 400 V. It serves as a high-efficiency primary-side switch in hard-switched and resonant SMPS topologies for consumer power adapters and indoor lighting drivers.

For engineers reviewing the IPD65R650CEAUMA1 datasheet, IPD65R650CEAUMA1 pinout, IPD65R650CEAUMA1 application, or IPD65R650CEAUMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high commutation ruggedness, gate drive simplicity, and thermal performance in TO-252 footprint designs.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure optimized for cost-sensitive, high-efficiency AC-DC conversion. Its 650 V V_(BR)DSS, 1.45 °C/W R_thJC, and 440 pF C_iss support stable operation in PFC and PWM stages up to 100 kHz switching frequency with minimal gate drive loss.

The MOSFET integrates an intrinsic body diode with t_rr = 270 ns and Q_rr = 2 µC, enabling reliable operation in discontinuous conduction mode (DCM) flyback and LLC resonant converters. Its 50 V/ns dv/dt ruggedness ensures robustness against parasitic ringing in compact layouts.

Key Specifications

Pinout & Package

IPD65R650CEAUMA1 uses the DPAK (PG-TO252) surface-mount package with exposed drain tab for thermal and electrical connection. The package supports reflow soldering per MSL3 and features Pb-free plating and halogen-free mold compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP65N6F6 and IPP65R650C7, IPD65R650CEAUMA1 offers the lowest gate drive burden and best thermal performance in SMD form factor, making it optimal for space-constrained, high-volume consumer power supplies where reflow compatibility and board-level thermal management are critical.

Availability

IPD65R650CEAUMA1 is available at Aetrix Electronics and suitable for USB-C power adapters, indoor LED drivers, PC silver box PFC modules, and LCD TV main SMPS requiring stable component supply and consistent parametric performance across production lots.

Supply support for IPD65R650CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency AC-DC conversion in consumer and lighting applications, balancing performance, ruggedness, and manufacturability in standard SMD packages like DPAK and TO-220FP.

FAQ

What is the maximum junction temperature and how does it affect design lifetime?

The IPD65R650CEAUMA1 has a rated maximum junction temperature of 150 °C. Operating continuously above 130 °C accelerates parametric drift and reduces long-term reliability; derating to ≤125 °C junction temperature is recommended for 10-year field life in consumer applications. Thermal design must account for R_thJC = 1.45 °C/W and PCB copper area per Infineon's AN2015-04 layout guidelines.

Can this MOSFET be paralleled, and what layout considerations apply?

Yes, parallel operation is supported but requires individual gate resistors and ferrite beads on each gate trace to suppress oscillation, as noted in Infineon's datasheet Note 1. Source inductance must be matched across devices, and the PCB layout must provide symmetrical thermal paths to avoid current imbalance. Gate drive traces should be equal length and impedance-controlled.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No - the integrated body diode has t_rr = 270 ns and Q_rr = 2 µC, which is too slow for zero-voltage switching (ZVS) in high-frequency LLC topologies (>200 kHz). External Schottky or GaN-based synchronous rectifiers are required for optimal efficiency; this MOSFET is intended for primary-side switching only.

What is the gate threshold voltage range and how does it impact drive circuit design?

V_GS(th) is specified from 2.5 V to 3.5 V at T_j = 25°C. This tight range ensures predictable turn-on behavior across temperature and process variation. A 10 V gate drive is required to fully enhance the channel (R_DS(on) spec applies at V_GS = 10 V); 5 V logic-level drivers are insufficient and will cause excessive conduction loss.