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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R660CFDAATMA1

Name: IPD65R660CFDAATMA1
Brand: Infineon Technologies
SKU: IPD65R660CFDAATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R660CFDAATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R660CFDAATMA1.pdf

Description:: MOSFET N-CH 650V 6A TO252-3

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Product details

Overview

IPD65R660CFDAATMA1 from Infineon Technologies is a 650 V, 0.66 Ω R_DS(on) CoolMOS™ CFDA superjunction power MOSFET in DPAK (TO-252) package, featuring ultra-fast body diode (t_rr = 65 ns, Q_rr = 0.2 µC), high commutation ruggedness (di/dt = 900 A/µs), and low gate charge (Q_g = 20 nC). It is qualified to AEC-Q101 and used in resonant LLC and PFC stages of industrial SMPS.

For engineers reviewing the IPD65R660CFDAATMA1 datasheet, IPD65R660CFDAATMA1 pinout, IPD65R660CFDAATMA1 application, or IPD65R660CFDAATMA1 equivalent, key selection criteria include body diode robustness under hard commutation, E_oss (1.8 µJ @ 400 V), FOM (R_DS(on) × Q_g), thermal resistance (R_thJC = 2 K/W), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This device implements Infineon's CoolMOS™ CFDA superjunction architecture optimized for zero-voltage switching (ZVS) topologies. Its low E_oss and fast, soft-recovery body diode enable reliable operation in high-frequency resonant converters without external snubbers.

The MOSFET supports gate drive with standard 10–13 V logic-level signals and exhibits stable R_DS(on) up to 150 °C (1.54 Ω max), while maintaining dv/dt ruggedness of 50 V/ns in both MOSFET and diode modes-critical for noise-immune operation in high-power PFC and DC-DC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 400 V DC-link applications with ≥30 % voltage margin for surge and ringing.
R_DS(on),max	0.66 Ω @ T_j = 25 °C - Enables <6 W conduction loss at 3.2 A continuous drain current.
Q_g,typ	20 nC - Reduces gate driver power requirement and enables >300 kHz switching in LLC designs.
E_oss @ 400 V	1.8 µJ - Low stored output capacitance energy minimizes turn-on switching loss in ZVS circuits.
t_rr / Q_rr	65 ns / 0.2 µC - Ultra-fast, soft reverse recovery prevents voltage overshoot during hard commutation.
di/dt (body diode)	900 A/µs - Sustains high-current commutation in phase-shifted full-bridge and asymmetrical half-bridge topologies.
R_thJC	2 K/W - Enables 62.5 W power dissipation at T_C = 25 °C with minimal heatsinking in SMD layout.

Pinout & Package

IPD65R660CFDAATMA1 is housed in a surface-mount DPAK (PG-TO252) package with exposed drain pad for thermal enhancement. Pin 1 is Source, Pin 2 is Gate, Pin 3 is Drain (tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Reference node for gate drive and current return path	Low-inductance source connection required to minimize gate oscillation and improve di/dt immunity.
Pin 2 (Gate)	Control terminal for channel modulation	Requires ≤6.8 Ω series gate resistor to balance switching speed and EMI; compatible with 5–15 V logic drivers.
Pin 3 (Drain)	Main high-side power terminal (exposed tab)	Tab is electrically connected to Drain; must be soldered to large copper pour for thermal and electrical integrity.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 65 ns, Q_rr = 0.2 µC - Eliminates need for external anti-parallel SiC Schottky in medium-frequency resonant converters.
High commutation ruggedness	di/dt = 900 A/µs - Withstands abrupt current reversal in hard-switched bridge legs without failure.
Low figure-of-merit	R_DS(on) × Q_g = 13.2 Ω·nC - Delivers superior efficiency vs. standard SJ-MOSFETs at 100–300 kHz.
AEC-Q101 qualified	Stress-tested per automotive reliability standards - Validated for under-hood industrial power supplies and EV auxiliary converters.

Applications

Server PSU PFC Stage

Industrial LLC Resonant Converter

Use Scenario: Active PFC front-end in 1–3 kW telecom/server PSUs operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 6 A RMS input current.

Use Value: Low R_DS(on) and E_oss reduce conduction + switching losses by ~12 % vs. prior-gen SJ-MOSFETs, improving efficiency to >98.5 % at full load.

Use Scenario: Primary-side switch in 500 W–2 kW isolated LLC DC-DC modules for factory automation.

IC Role / Device Role / Timing Role: ZVS-capable primary switch synchronized to resonant tank zero-crossing; operates at 250–500 kHz.

Use Value: Ultra-fast body diode ensures reliable self-commutation during dead-time, enabling stable ZVS across 10–100 % load range without auxiliary circuits.

Onboard Charger (OBC) AC-DC Stage

Solar Microinverter DC-Link Switch

Use Scenario: Interleaved PFC stage in 6.6 kW automotive OBCs with dual-phase boost topology.

IC Role / Device Role / Timing Role: Phase-leg switch rated for 17 A pulsed current; thermally coupled to aluminum baseplate.

Use Value: AEC-Q101 qualification and 150 °C T_j rating ensure long-term reliability in sealed, convection-cooled enclosures with ambient up to 105 °C.

Use Scenario: DC-link switching in single-phase 300–500 W solar microinverters with transformer-isolated H-bridge.

IC Role / Device Role / Timing Role: High-voltage side switch handling 450–800 V DC bus; subjected to repetitive unclamped inductive switching.

Use Value: 50 V/ns dv/dt ruggedness and 115 mJ single-pulse avalanche energy prevent failure during grid-voltage transients and islanding events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD7	Lower R_DS(on) (0.099 Ω), higher Q_g (64 nC), same 650 V rating and CFDA platform	Better conduction loss but higher gate drive loss; requires larger gate driver and heatsink	Select when conduction loss dominates and gate drive capability permits higher Q_g.
STP65N6F6	650 V, 0.06 Ω R_DS(on), no AEC-Q101, slower body diode (t_rr ≈ 120 ns)	Higher efficiency at low frequency but unsuitable for ZVS above 150 kHz due to diode tail current	Select only for non-automotive, hard-switched applications below 100 kHz where diode speed is not critical.

Compared with IPW65R099CFD7 and STP65N6F6, IPD65R660CFDAATMA1 offers optimal balance of switching loss (via low E_oss and Q_g), body diode performance, and automotive qualification-making it preferred for space-constrained, high-frequency resonant converters requiring field-proven ruggedness.

Availability

IPD65R660CFDAATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial LLC converters, onboard chargers, and solar microinverters requiring stable component supply and AEC-Q101-compliant MOSFETs.

Supply support for IPD65R660CFDAATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

The CoolMOS™ CFDA product line targets high-efficiency, high-reliability switching applications in resonant topologies, combining superjunction technology with enhanced body diode dynamics for next-generation SMPS and EV power systems.

FAQ

Is IPD65R660CFDAATMA1 pin-compatible with earlier CoolMOS™ CFD or CFD2 variants?

No. While all share DPAK packaging, IPD65R660CFDAATMA1 uses updated die design and gate oxide structure. Pinout is identical (Drain–Gate–Source), but gate threshold voltage (3.5–4.5 V) and dynamic parameters differ significantly-requiring re-optimization of gate drive and layout for stability and EMI.

What is the maximum recommended gate resistor value for ZVS operation in an LLC converter?

For reliable ZVS at 300 kHz with 400 V bus, a gate resistor of 4.7–6.8 Ω is recommended. This balances turn-on speed (to minimize t_on) and dV/dt control (to limit EMI), leveraging the device's low Q_g and high dv/dt ruggedness without risking gate oscillation.

Does the AEC-Q101 qualification cover temperature cycling and mechanical shock testing?

Yes. AEC-Q101 qualification for IPD65R660CFDAATMA1 includes temperature cycling (-40 °C to +150 °C, 1000 cycles), mechanical shock (1500 g), and board flex tests-validating suitability for automotive under-hood environments and industrial equipment subject to vibration and thermal stress.

Can this MOSFET replace a 600 V Si IGBT in a 10 kHz motor drive inverter?

No. Though rated for 650 V, IPD65R660CFDAATMA1 is optimized for >100 kHz resonant switching-not low-frequency, high-current motor drive. Its R_DS(on) increases sharply above 10 A, and lack of short-circuit withstand time makes it unsuitable for IGBT-replacement in 60 Hz–20 kHz inverters.

IPD65R660CFDAATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 3.22A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 214.55µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 543 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R660CFDAATMA1 FAQ

1.How can I place an order for IPD65R660CFDAATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R660CFDAATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R660CFDAATMA1 reliable?

The price and inventory of IPD65R660CFDAATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R660CFDAATMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R660CFDAATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R660CFDAATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R660CFDAATMA1?

IPD65R660CFDAATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R660CFDAATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R660CFDAATMA1?

For technical support, including IPD65R660CFDAATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R660CFDAATMA1 requirements.

6.How does Aetrix verify that IPD65R660CFDAATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R660CFDAATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R660CFDAATMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R660CFDAATMA1?

All IPD65R660CFDAATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R660CFDAATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R660CFDAATMA1 part is unused and in its original packaging.

Return procedure for IPD65R660CFDAATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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