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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD80R2K7C3AATMA1

Name: IPD80R2K7C3AATMA1
Brand: Infineon Technologies
SKU: IPD80R2K7C3AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD80R2K7C3AATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD80R2K7C3AATMA1.pdf

Description:: MOSFET N-CH TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,495

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Product details

Overview

IPD80R2K7C3AATMA1 from Infineon Technologies is a 800 V, 2.7 Ω (max @ Tj=25°C) N-channel enhancement-mode CoolMOS™ C3 power MOSFET in PG-TO252-3 package, rated for automotive-grade AEC-Q101 compliance, ultra-low gate charge (12 nC typ), and high dv/dt ruggedness (640 V/ns). It serves as a high-voltage switching device in active-clamp forward converters operating with DC bulk voltages up to 800 V.

For engineers reviewing the IPD80R2K7C3AATMA1 datasheet, IPD80R2K7C3AATMA1 pinout, IPD80R2K7C3AATMA1 application, or IPD80R2K7C3AATMA1 equivalent, key selection criteria include R_DS(on) temperature stability, avalanche energy rating (90 mJ single-pulse), diode reverse recovery performance (t_rr = 520 ns), and thermal resistance (R_thJC = 3 K/W).

Technical Context

This device implements Infineon's CoolMOS™ C3 technology, featuring optimized charge distribution for reduced effective output capacitance (C_o(er) = 11 pF) and minimized switching losses. Its gate threshold voltage (2.1–3.9 V) and plateau voltage (5.5 V) support robust gate drive design in isolated topologies.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 2 µC, I_rrm = 6 A) and is rated for repetitive diode forward current (I_S = 2 A), enabling use in hard-switched and resonant converter configurations without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports DC link operation up to 640 V with margin for transients in automotive and industrial SMPS
R_DS(on) max @ 25°C	2.7 Ω - defines conduction loss at low current (I_D = 1.2 A); rises to 5.5 Ω @ 150°C
Q_g typ	12 nC - enables fast, low-loss switching with moderate gate driver strength (e.g., 1–2 A peak)
E_AS	90 mJ - allows single-pulse unclamped inductive switching without failure under defined test conditions
C_iss	290 pF - impacts gate drive loop stability and Miller effect during high dv/dt transitions
t_rr	520 ns - determines diode commutation time and associated switching loss in bridge-leg configurations
R_thJC	3 K/W - enables 42 W power dissipation at T_C = 25°C; requires minimal copper area for thermal management

Pinout & Package

IPD80R2K7C3AATMA1 is housed in a surface-mount PG-TO252-3 (DPAK) package with exposed drain pad for thermal conduction. The package complies with MSL1 reflow profile (260 °C peak) and features halogen-free mold compound and Pb-free lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to low-side return path; carries full load current
Pin 2 (Gate)	Control electrode	High-impedance input requiring <100 nA leakage; driven to ≥10 V for full enhancement
Pin 3 (Drain)	Power output terminal	Exposed copper pad on bottom side; electrically and thermally connected to drain; must be routed to high-voltage DC bus

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements (HTOL, TC, H3TRB)
Ultra-low Q_g (12 nC)	Reduces gate drive power and EMI generation in high-frequency (>100 kHz) switching applications
dv/dt ruggedness (640 V/ns)	Withstands rapid voltage transients without spurious turn-on in high-noise environments like motor drives
Low C_o(er) (11 pF)	Minimizes stored energy in output capacitance, lowering turn-off loss and improving ZVS capability
Integrated fast-recovery diode	Enables bidirectional current flow in LLC and phase-shifted full-bridge topologies without discrete diode

Applications

Active-Clamp Forward Converter

On-Board Charger (OBC)

Use Scenario: High-efficiency 3.3–6.6 kW isolated DC/DC stage converting 400 V battery to 12/48 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 800 V blocking and 2 A average current with active-clamp reset.

Use Value: Low R_DS(on) and C_o(er) reduce conduction and switching losses; AEC-Q101 ensures reliability across vehicle lifetime.

Use Scenario: Bidirectional AC/DC and DC/DC conversion in EV charging systems with 800 V architecture.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved PFC and isolated DC/DC stages, operating at 65–100 kHz.

Use Value: 640 V/ns dv/dt rating prevents false triggering during fast grid transients; Q_rr and t_rr enable soft-switching in ZVS designs.

Industrial SMPS

Photovoltaic Inverter DC Link

Use Scenario: 1–3 kW telecom rectifier or server PSU with universal AC input and 400 V DC bus.

IC Role / Device Role / Timing Role: Primary switch in LLC resonant half-bridge, operating with zero-voltage switching.

Use Value: Low C_iss and stable R_DS(on) over temperature ensure consistent gain and efficiency across ambient range.

Use Scenario: String-level DC optimization and isolation in utility-scale solar farms with 1000–1500 V DC strings.

IC Role / Device Role / Timing Role: High-voltage switch in DC/DC boost and isolation stages handling up to 800 V blocking.

Use Value: 90 mJ E_AS withstands lightning-induced surges; RoHS/halogen-free construction meets PV system environmental standards.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD80R1K2P7ATMA1	R_DS(on) = 1.2 Ω (lower conduction loss), Q_g = 25 nC (higher drive requirement), same 800 V rating	Better suited for lower-frequency, higher-current applications where conduction loss dominates	Select when I_D > 3 A average and switching frequency < 65 kHz
STW80N80F5	800 V rating, R_DS(on) = 2.8 Ω, Q_g = 100 nC, no AEC-Q101 qualification	Limited to industrial/non-automotive use; higher gate charge increases driver complexity and loss	Choose only for cost-sensitive non-automotive designs with relaxed reliability requirements

Compared with IPD80R2K7C3AATMA1, the IPD80R1K2P7ATMA1 trades higher gate drive demand for significantly lower conduction loss, while the STW80N80F5 lacks automotive qualification and introduces greater switching loss due to excessive Q_g, limiting suitability for high-efficiency or safety-critical systems.

Availability

IPD80R2K7C3AATMA1 is available at Aetrix Electronics and suitable for active-clamp forward converters, on-board chargers, industrial SMPS, and photovoltaic inverter DC link stages requiring stable component supply, automotive-grade reliability, and high-voltage switching performance.

Supply support for IPD80R2K7C3AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-voltage switched-mode power supplies in automotive and industrial applications demanding AEC-Q101 compliance and low switching losses.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (I_D) is 1.2 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (3 K/W) and safe operating area limitations at elevated temperatures.

Does IPD80R2K7C3AATMA1 include an integrated body diode, and what are its key parameters?

Yes, it features an integrated fast-recovery body diode with V_SD = 1.0–1.2 V at I_F = 2 A and T_j = 25°C, t_rr = 520 ns, Q_rr = 2 µC, and I_rrm = 6 A. These values are measured under standardized conditions (V_R = 400 V, di/dt = 100 A/µs) and support use in synchronous rectification and resonant topologies.

Can this MOSFET be used in zero-voltage switching (ZVS) circuits?

Yes - its low effective output capacitance (C_o(er) = 11 pF) and controlled diode reverse recovery (Q_rr = 2 µC) make it suitable for ZVS operation in LLC and phase-shifted full-bridge converters. Designers must ensure sufficient dead time and resonant tank design to achieve reliable soft switching across load and line variations.

Is the PG-TO252-3 package compatible with standard SMT reflow profiles?

Yes - the device is qualified for MSL1 per JEDEC J-STD-020 and supports peak reflow temperatures up to 260°C. The package uses Pb-free lead plating and halogen-free mold compound, meeting RoHS and ELV directives without requiring special soldering processes or underfill.

IPD80R2K7C3AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.7Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 290 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IPD80R2K7C3AATMA1 FAQ

1.How can I place an order for IPD80R2K7C3AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD80R2K7C3AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD80R2K7C3AATMA1 reliable?

The price and inventory of IPD80R2K7C3AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD80R2K7C3AATMA1 is usually 5 days.

3.What payment methods are accepted for IPD80R2K7C3AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD80R2K7C3AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD80R2K7C3AATMA1?

IPD80R2K7C3AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD80R2K7C3AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD80R2K7C3AATMA1?

For technical support, including IPD80R2K7C3AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD80R2K7C3AATMA1 requirements.

6.How does Aetrix verify that IPD80R2K7C3AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD80R2K7C3AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD80R2K7C3AATMA1 meets industry standards.

7.What is the process for return or replacement of IPD80R2K7C3AATMA1?

All IPD80R2K7C3AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD80R2K7C3AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD80R2K7C3AATMA1 part is unused and in its original packaging.

Return procedure for IPD80R2K7C3AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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