Infineon Technologies IPD80R750P7ATMA1

Overview

IPD80R750P7ATMA1 from Infineon is an 800V superjunction N-channel CoolMOS™ P7 power MOSFET in DPAK (PG-TO252-3) package, featuring R_DS(on) max 0.75 Ω at 10 V_GS, 7 A continuous drain current, 17 nC total gate charge, and integrated ESD protection. It is optimized for hard/soft-switching flyback converters in LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPD80R750P7ATMA1 datasheet, IPD80R750P7ATMA1 pinout, IPD80R750P7ATMA1 application, or IPD80R750P7ATMA1 equivalent, key selection criteria include its 3 V gate threshold with ±0.5 V variation, 1.6 µJ E_oss at 500 V, 460 pF C_iss, and JEDEC-qualified industrial reliability - critical for high-density, low-BOM-cost SMPS designs.

Technical Context

This 800V CoolMOS™ P7 device uses charge-compensation superjunction architecture to achieve best-in-class R_DS(on) × E_oss figure of merit, enabling high-efficiency flyback operation up to 100 kHz with reduced switching losses. Its 3 V V_GS(th) and low Q_g simplify gate drive design and improve parallelability.

The integrated Zener-protected gate and body diode support robust ESD immunity (HBM Class 2), while its 100 V/ns dv/dt ruggedness ensures stable operation in noisy high-voltage node environments. Thermal resistance R_thJC = 2.4 °C/W enables efficient heatsinking in compact DPAK layouts.

Key Specifications

Pinout & Package

IPD80R750P7ATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain tab for thermal and electrical connection. The package supports surface-mount reflow (MSL1, 260°C peak) and provides low R_thJC = 2.4 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Compared with IPD80R650P7ATMA1, this part trades 0.1 Ω higher R_DS(on) for 2 nC lower Q_g, favoring high-frequency efficiency; versus STP80NF80, it delivers superior ease-of-use, ESD safety, and soft-switching capability despite higher R_DS(on).

Availability

IPD80R750P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C adapter primary stages, and auxiliary power supplies requiring stable component supply, JEDEC industrial qualification, and DPAK-compatible thermal management.

Supply support for IPD80R750P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 18 years of superjunction MOSFET innovation.

This device belongs to the CoolMOS™ P7 series - engineered specifically for high-efficiency, high-power-density offline SMPS in consumer, industrial, and renewable energy systems where ease-of-use and production yield are critical.

FAQ

Is IPD80R750P7ATMA1 suitable for paralleling in high-current designs?

Yes - its tight V_GS(th) distribution (±0.5 V) and low R_DS(on) tolerance enable stable current sharing. Infineon recommends using individual ferrite beads on each gate line or separate totem-pole drivers to suppress oscillation and ensure simultaneous switching.

What is the maximum recommended PCB copper area for thermal performance in DPAK layout?

For optimal R_thJA, use a minimum 6 cm² copper area (single-layer, 70 µm thick) connected directly to the drain tab on a vertical 40 mm × 40 mm × 1.5 mm FR4 board. This achieves R_thJA ≈ 35–45 °C/W without forced airflow.

Does the integrated body diode support continuous conduction mode (CCM) operation?

No - the internal body diode is optimized for flyback discontinuous conduction mode (DCM) and quasi-resonant (QR) recovery. Its t_rr = 630 ns and Q_rr = 5.2 µC limit use in high-frequency CCM PFC; dedicated SiC diodes are preferred for that stage.

Can IPD80R750P7ATMA1 replace older CoolMOS™ P6 devices in existing designs?

Yes - it shares identical PG-TO252-3 package, pinout, and gate drive requirements. Key improvements include 15% lower E_oss, 20% lower Q_g, and tighter V_GS(th) control, allowing direct replacement with measurable efficiency gain and reduced thermal stress.