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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N04S403ATMA1

Name: IPD90N04S403ATMA1
Brand: Infineon Technologies
SKU: IPD90N04S403ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N04S403ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N04S403ATMA1.pdf

Description:: MOSFET N-CH 40V 90A TO252-3

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Product details

Overview

IPD90N04S403ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in PG-TO252-3-313 package, rated for 40 V V_DS, 3.2 mΩ R_DS(on) max at 10 V V_GS, and 90 A continuous drain current at T_C = 25 °C. It operates up to 175 °C junction temperature and is 100% avalanche tested - used in automotive DC-DC converters and motor control stages where high-current switching with low conduction loss is critical.

For engineers reviewing the IPD90N04S403ATMA1 datasheet, IPD90N04S403ATMA1 pinout, IPD90N04S403ATMA1 application, or IPD90N04S403ATMA1 equivalent, key selection criteria include its 1.6 K/W R_thJC, 360 A pulsed drain capability, integrated body diode with 43 ns t_rr, and MSL1 reflow compatibility - all validated for under-hood automotive power stages.

Technical Context

This OptiMOS®-T2 power transistor employs trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive, while the 5.8 V gate plateau voltage supports stable Miller region control during hard-switching.

The device integrates a fast-recovery body diode (t_rr = 43 ns, Q_rr = 44 nC) and delivers 185 mJ single-pulse avalanche energy at I_D = 45 A - enabling reliable operation in inductive load switching without external freewheeling diodes in many automotive applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail systems
R_DS(on) max	3.2 mΩ at V_GS = 10 V, I_D = 90 A - Enables ≤2.9 W conduction loss at full load
I_D cont	90 A at T_C = 25 °C - Supported by bondwire-limited current rating and 1.6 K/W thermal resistance
E_AS	185 mJ - Single-pulse avalanche ruggedness verified per JEDEC JESD24-11
t_rr	43 ns - Fast body diode recovery reduces switching losses in synchronous rectification
Q_g	66 nC max - Gate charge optimized for <100 ns total switching time with 3.5 Ω gate resistor
R_thJC	1.6 K/W - Enables direct heatsink mounting for high-power density PCB layouts

Pinout & Package

IPD90N04S403ATMA1 uses the PG-TO252-3-313 (DPAK) thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current routing and efficient heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side return path; connected to PCB ground plane for minimal loop inductance
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nC total charge for full enhancement
Pin 3 (Drain)	Power output / High-side connection	Exposed metal pad - electrically tied to drain; must be soldered to ≥6 cm² copper area for thermal performance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit subjected to single-pulse E_AS stress at production test - no screening failures allowed
MSL1, 260 °C peak reflow	Compatible with standard lead-free SMT assembly without moisture sensitivity concerns
175 °C operating T_j	Enables placement near hot components (e.g., engine control units) without derating
Green Product (RoHS)	Lead-free, halogen-free construction compliant with EU Directive 2011/65/EU

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) H-Bridge

Use Scenario: Step-down conversion from 48 V or 12 V battery to 5 V/3.3 V logic rails in ADAS domain controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching assist.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 5 mΩ devices, improving efficiency at 60 A load.

Use Scenario: Bidirectional motor drive in column-assist EPS systems with regenerative braking.

IC Role / Device Role / Timing Role: High-current quadrant switch in half-bridge leg, handling 90 A peak motor current with <15 ns fall time.

Use Value: 185 mJ E_AS withstands inductive kickback during rapid direction reversal without snubber circuits.

On-Board Charger (OBC) Input Stage

12 V Battery Protection Switch

Use Scenario: AC-DC PFC front-end switching in bi-directional OBC modules for plug-in hybrids.

IC Role / Device Role / Timing Role: Fast-switching N-channel switch in interleaved boost topology with 360 A pulsed capability.

Use Value: 4050 pF C_iss and 51 nC Q_g enable efficient 100 kHz operation with minimal gate drive power.

Use Scenario: Smart high-side load switch for battery disconnect and short-circuit protection in body control modules.

IC Role / Device Role / Timing Role: Load switch with integrated reverse polarity and overtemperature protection via external controller.

Use Value: 2.0–4.0 V V_GS(th) range ensures clean turn-on with 3.3 V microcontroller GPIO, eliminating level-shifter need.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 2.2 mΩ R_DS(on), 220 A I_D, DFN5x6 package	Higher current rating but requires larger PCB footprint and dual-side cooling	Preferred for space-constrained 48 V systems needing >150 A peak
IRL8721PBF	30 V, 4.5 mΩ R_DS(on), TO-220AB package, non-AEC qualified	Limited to 30 V systems; lacks automotive qualification and 175 °C rating	Suitable only for industrial 12 V prototypes without automotive compliance needs

Compared with STL220N4F7AG and IRL8721PBF, IPD90N04S403ATMA1 offers optimal balance of AEC-Q101 compliance, 40 V rating, DPAK thermal performance, and proven 90 A continuous capability - making it the default choice for production-grade 12 V/24 V automotive power stages.

Availability

IPD90N04S403ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering systems, and on-board chargers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPD90N04S403ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 product line - engineered specifically for high-efficiency, high-reliability automotive power conversion where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPD90N04S403ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 5.8 V gate plateau ensuring stable Miller region control. Gate drive circuits must include clamping or Zener protection if using higher-voltage drivers.

Does IPD90N04S403ATMA1 require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. With R_G = 3.5 Ω (per datasheet test condition), total switching time is ~54 ns. For 12 V systems, 2.2–4.7 Ω provides optimal trade-off between E_sw and EMI; values below 1.5 Ω risk ringing and overshoot.

Can IPD90N04S403ATMA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables inherent current sharing. Layout symmetry, matched gate drive paths, and shared thermal mass are essential. Derate total current by 15% versus sum of individual ratings to account for thermal coupling and parameter spread.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 90 A continuous forward current at T_C = 25 °C and exhibits 0.9–1.3 V V_SD at 90 A. Its 43 ns t_rr and 44 nC Q_rr make it viable for 200–500 kHz synchronous rectification, though external Schottky diodes may be preferred above 1 MHz.

IPD90N04S403ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 53µA

Gate Charge (Qg) (Max) @ Vgs:: 66.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD90N04S403ATMA1 FAQ

1.How can I place an order for IPD90N04S403ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N04S403ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N04S403ATMA1 reliable?

The price and inventory of IPD90N04S403ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N04S403ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N04S403ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N04S403ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N04S403ATMA1?

IPD90N04S403ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N04S403ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N04S403ATMA1?

For technical support, including IPD90N04S403ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N04S403ATMA1 requirements.

6.How does Aetrix verify that IPD90N04S403ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N04S403ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N04S403ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N04S403ATMA1?

All IPD90N04S403ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N04S403ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N04S403ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N04S403ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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