Infineon Technologies IPD90N04S404ATMA1

Overview

IPD90N04S404ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-313 package, rated for 40 V V_DS, 4.1 mΩ R_DS(on) at 10 V V_GS, and 90 A continuous drain current at T_C = 25°C. It features 100% single-pulse avalanche testing (95 mJ), 175°C maximum junction temperature, and integrated Schottky-like body diode with 0.9–1.3 V forward voltage at 90 A.

For engineers reviewing the IPD90N04S404ATMA1 datasheet, IPD90N04S404ATMA1 pinout, IPD90N04S404ATMA1 application, or IPD90N04S404ATMA1 equivalent, key selection criteria include its low R_DS(on) for high-efficiency 12 V/24 V automotive load switching, robust avalanche capability for inductive load handling, MSL1 reflow compatibility, and validated operation up to 175°C ambient in engine bay modules.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in DC-DC converters and motor control stages. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while the 5.8 V gate plateau voltage supports stable Miller region control during hard-switching.

The MOSFET integrates a fast-recovery body diode (t_rr = 39 ns, Q_rr = 35 nC) suitable for synchronous rectification and freewheeling in buck converters and H-bridge motor drives. Thermal resistance R_thJC = 2.1 K/W allows sustained 90 A operation with minimal heatsinking when mounted on a 6 cm² copper area.

Key Specifications

Pinout & Package

IPD90N04S404ATMA1 is housed in PG-TO252-3-313 (DPAK) package with exposed drain pad for thermal performance. The three-terminal configuration supports surface-mount assembly with MSL1 reflow profile compatibility up to 260°C peak.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N4F7AG and IRF7470PBF, IPD90N04S404ATMA1 uniquely combines AEC-Q101 qualification, 100% avalanche testing, and MSL1 reflow compatibility-making it the only option qualified for under-hood engine control and EPS applications requiring functional safety compliance.

Availability

IPD90N04S404ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering modules, and HVAC blower systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPD90N04S404ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V/24 V automotive power switching in engine, chassis, and body control modules.

FAQ

What is the maximum allowable gate-source voltage for IPD90N04S404ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable switching, V_GS should be maintained between 4.5 V (minimum for full enhancement) and 15 V (recommended upper limit to avoid accelerated gate wear), with 10 V being the standard drive level for specified R_DS(on) and switching performance.

Does IPD90N04S404ATMA1 require a gate resistor in automotive applications?

Yes-a series gate resistor (typically 5–22 Ω) is required to dampen ringing, control dV/dt during turn-on/off, and limit peak gate current from drivers. Without it, parasitic oscillation can cause shoot-through in half-bridge configurations or false triggering due to Miller capacitance coupling in noisy engine environments.

Can IPD90N04S404ATMA1 replace older OptiMOS®-T1 devices in existing designs?

Yes, it is a direct drop-in replacement for IPD90N04S3-04 and similar T1 variants, sharing identical PG-TO252-3-313 footprint, pinout, and voltage ratings. Key improvements include lower R_DS(on) (4.1 mΩ vs. 4.8 mΩ), higher avalanche energy (95 mJ vs. 75 mJ), and extended temperature range (175°C vs. 150°C).

How is thermal performance affected when mounted on a minimal PCB footprint?

With only the minimal footprint (no added copper), R_thJA rises to 62 K/W, limiting continuous current to ~25 A at 25°C ambient. To achieve full 90 A rating, the drain pad must be soldered to ≥6 cm² of 70 µm thick copper on FR4, reducing R_thJA to 40 K/W and enabling 75 A at 85°C ambient.