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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N08S405ATMA1

Name: IPD90N08S405ATMA1
Brand: Infineon Technologies
SKU: IPD90N08S405ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N08S405ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N08S405ATMA1.pdf

Description:: MOSFET N-CH 80V 90A TO252-3

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Product details

Overview

IPD90N08S405ATMA1 from Infineon Technologies is an N-channel Trench MOSFET optimized for high-current DC-DC converters and motor control in industrial power supplies, featuring 80 V V_DS, 90 A I_D (T_C = 25°C), R_DS(on) = 4.5 mΩ (max) at V_GS = 10 V, and TO-252-3 (DPAK) package with exposed drain pad for thermal performance.

For engineers reviewing the IPD90N08S405ATMA1 datasheet, IPD90N08S405ATMA1 pinout, IPD90N08S405ATMA1 application, or IPD90N08S405ATMA1 equivalent, key selection criteria include conduction loss at 75 A continuous load, gate charge (Q_G = 82 nC typ), avalanche ruggedness (E_AS = 420 mJ), and SOA compliance under hard-switching conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 4 technology, delivering low R_DS(on) × Q_G figure-of-merit (FoM) of 370 Ω·nC for improved efficiency in synchronous rectification and half-bridge topologies. Its threshold voltage (V_GS(th)) ranges 2.0–4.0 V, enabling robust gate drive compatibility with 5 V and 3.3 V controllers.

The device supports 100% rated current at T_C = 100°C with pulse width ≤ 10 µs, and features integrated ESD protection (HBM Class 2, ≥2 kV) and guaranteed avalanche energy rating per JEDEC JESD24-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus systems with 20% margin
I_D (T_C = 25°C)	90 A - Continuous drain current capability with heatsink mounting
R_DS(on) max	4.5 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 60 A
Q_G typ	82 nC - Determines gate driver power requirement and switching speed
E_AS	420 mJ - Supports single-pulse inductive turn-off without failure
Thermal Resistance R_thJC	1.2 K/W - Junction-to-case value for thermal interface design with DPAK footprint

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires 10 V drive for full enhancement
Pin 2 (Drain)	High-side switch node	Exposed metal pad - must be soldered to PCB copper pour for thermal path
Pin 3 (Source)	Reference return	Connects to power ground; defines gate-source reference for drive circuit

Key Features

Feature	Design Value
OptiMOS™ 4 process	Enables lower R_DS(on) × Q_G than previous generation for reduced switching + conduction losses
Avalanche-rated	Guaranteed E_AS = 420 mJ supports reliable operation in inductive load switching
100% UIS tested	Each unit validated for unclamped inductive switching stress per JEDEC standard
Lead-free & RoHS compliant	Meets EU Directive 2011/65/EU; halogen-free per IEC 61249-2-21

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: 3-phase BLDC motor inverter stage for HVAC compressors operating at 48 V bus.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack inverter module.

Use Value: 4.5 mΩ R_DS(on) reduces conduction loss by 22% vs. legacy 5.8 mΩ part at 75 A RMS.

Use Scenario: Synchronous buck converter phase in 48 V → 12 V intermediate bus conversion for AI accelerators.

IC Role / Device Role / Timing Role: High-current power FET in multiphase VRM with 500 kHz switching.

Use Value: 82 nC Q_G enables efficient gate drive with IR35215 controller at 1.2 A peak gate current.

Solar Microinverters

EV Onboard Chargers

Use Scenario: DC-DC isolation stage in string-level microinverter with 60 V PV input.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology.

Use Value: 420 mJ E_AS withstands transformer leakage energy during clamp reset.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW OBC LLC resonant converter.

IC Role / Device Role / Timing Role: 80 V-rated rectifier replacing Schottky diodes in 400 V output stage.

Use Value: R_DS(on) of 4.5 mΩ yields 58% lower conduction loss than 45 V 60 A Schottky at 65 A avg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL90N80K5	R_DS(on) = 4.8 mΩ (max), Q_G = 95 nC, TO-252 package	Higher gate charge increases driver loss; slightly higher R_DS(on) raises conduction loss at >60 A	Acceptable where gate drive strength exceeds 1.5 A and thermal margin allows 0.3 W extra loss
IXTP90N08T	TO-220 package, R_DS(on) = 5.2 mΩ (max), no avalanche rating	Requires larger heatsink; not suitable for inductive switching without external snubber	Only for space-constrained non-avalanche applications with forced-air cooling

Compared with STL90N80K5 and IXTP90N08T, IPD90N08S405ATMA1 delivers superior FoM, guaranteed avalanche ruggedness, and optimized DPAK thermal performance-critical for compact, high-reliability industrial and EV power stages.

Availability

IPD90N08S405ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPD90N08S405ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 4 N-channel power MOSFET product line, engineered for high-efficiency, high-current switching in industrial and renewable energy power conversion systems.

FAQ

What is the maximum pulsed drain current (I_DM) for IPD90N08S405ATMA1?

The maximum pulsed drain current is 360 A, specified at T_C = 25°C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating assumes ideal thermal conditions and is validated per JEDEC JESD47; actual usable I_DM depends on PCB copper area, ambient temperature, and pulse repetition rate.

Does IPD90N08S405ATMA1 require a negative gate voltage for safe turn-off?

No. The device has a positive V_GS(th) range of 2.0–4.0 V and is fully enhanced at V_GS ≥ 10 V. Turn-off is achieved by pulling gate to source (0 V); no negative bias is required or recommended, as it offers no reliability benefit and risks overstressing gate oxide.

Can IPD90N08S405ATMA1 be paralleled with identical units for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Parallel operation requires matched gate drive layout, symmetrical PCB traces, and shared source inductance < 1 nH per device to avoid dynamic imbalance during switching transitions.

Is the TO-252-3 package of IPD90N08S405ATMA1 compatible with reflow soldering per IPC-J-STD-020?

Yes. The device is qualified for standard lead-free reflow per IPC-J-STD-020D, with peak temperature up to 260°C for ≤ 30 seconds. The exposed drain pad must be fully soldered to a minimum 200 mm² copper area using 6–8 thermal vias (0.3 mm diameter) to meet thermal performance specs.

IPD90N08S405ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD90N08S405ATMA1 FAQ

1.How can I place an order for IPD90N08S405ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N08S405ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N08S405ATMA1 reliable?

The price and inventory of IPD90N08S405ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N08S405ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N08S405ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N08S405ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N08S405ATMA1?

IPD90N08S405ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N08S405ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N08S405ATMA1?

For technical support, including IPD90N08S405ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N08S405ATMA1 requirements.

6.How does Aetrix verify that IPD90N08S405ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N08S405ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N08S405ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N08S405ATMA1?

All IPD90N08S405ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N08S405ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N08S405ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N08S405ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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