Infineon Technologies IPD90N10S406ATMA1

Overview

IPD90N10S406ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-313 package, rated for 100 V V_DS, 6.7 mΩ R_DS(on) max at V_GS = 10 V and I_D = 90 A, with 175 °C maximum junction temperature and 100% single-pulse avalanche tested. It serves as a high-current main switch in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPD90N10S406ATMA1 datasheet, IPD90N10S406ATMA1 pinout, IPD90N10S406ATMA1 application, or IPD90N10S406ATMA1 equivalent, key selection criteria include its 1.1 K/W R_thJC, 360 A pulsed drain current capability, integrated body diode with 65 ns t_rr, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOSTM-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.0–3.5 V) enables robust drive with standard 5 V or 10 V logic-level controllers, while the 4.9 V gate plateau voltage supports stable Miller region control during hard-switching.

The MOSFET integrates a fast-recovery body diode (t_rr = 65 ns, Q_rr = 130 nC) and exhibits low dynamic capacitances (C_iss = 4870 pF typ, C_oss = 1550 pF typ), enabling efficient operation in synchronous rectification and high-frequency PWM applications up to 200 kHz.

Key Specifications

Pinout & Package

IPD90N10S406ATMA1 is housed in PG-TO252-3-313 (D-Pak) package with exposed drain tab on the underside for thermal dissipation. The three terminals are arranged in standard TO252 layout: Pin 1 = Gate, Pin 2 = Source, Pin 3 = Drain (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N10F7 and IRF1407PBF, IPD90N10S406ATMA1 uniquely combines AEC-Q101 qualification, 100 V rating, and 6.7 mΩ R_DS(on) in surface-mount D-Pak-enabling compact, reliable, and production-ready automotive power stages without compromise.

Availability

IPD90N10S406ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and onboard charger PFC stages requiring stable component supply across extended vehicle lifecycles.

Supply support for IPD90N10S406ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOSTM-T2 product line, engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V/48 V automotive power systems including engine control, ADAS, and electrified drivetrain subsystems.

FAQ

What is the maximum allowable gate-source voltage for IPD90N10S406ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) performance, with minimum 5 V ensuring reliable turn-on across temperature and process variation. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching.

Does IPD90N10S406ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. For 100 kHz switching with a 1 A peak gate driver, a 3.5 Ω resistor is recommended (per datasheet test condition). Lower values increase switching speed but raise EMI risk; higher values reduce EMI but increase switching losses. Layout parasitics must be minimized regardless of resistor choice.

How is thermal performance affected when mounted on a minimal PCB footprint?

With minimal footprint (no added copper), R_thJA is 62 K/W, limiting continuous power dissipation to ~2.2 W at 25 °C ambient. Using the recommended 6 cm² copper area reduces R_thJA to 40 K/W, enabling ~3.4 W dissipation. For full 90 A operation, thermal design must rely on R_thJC = 1.1 K/W and direct heatsink attachment to the drain tab.

Can IPD90N10S406ATMA1 replace older OptiMOSTM variants like IPD90N04S4-06 in existing designs?

No-IPD90N04S4-06 is a 40 V device with different R_DS(on) and thermal characteristics. Substitution requires verification of voltage margin, SOA, and gate drive compatibility. While both share PG-TO252-3-313 packaging, the 100 V rating and higher current capability of IPD90N10S406ATMA1 make it unsuitable as a drop-in replacement without circuit redesign.