Infineon Technologies IPG15N06S3L-45

Overview

IPG15N06S3L-45 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8-4 package, rated for 55 V V_DS, 15 A continuous drain current per channel at T_C = 25 °C, and 45 mΩ max R_DS(on) per channel at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and supports automotive motor control and DC-DC converter applications requiring robust 175 °C operation.

For engineers reviewing the IPG15N06S3L-45 datasheet, IPG15N06S3L-45 pinout, IPG15N06S3L-45 application, or IPG15N06S3L-45 equivalent, key selection criteria include its dual-channel layout, 45 mΩ R_DS(on) per channel at 10 V gate drive, 15 A continuous rating, 60 A pulsed capability, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This OptiMOS®-T device integrates two identical N-channel power transistors in a single thermally enhanced TDSON-8 package with exposed drain pad. Its logic-level gate threshold (1.2–2.2 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting. The 7 K/W junction-to-case thermal resistance supports high-power density designs when mounted on 6 cm² copper area.

Each channel features independent source, drain, and gate terminals with shared thermal path. Dynamic parameters-1090–1420 pF input capacitance, 15–20 nC total gate charge, and 7 ns turn-on delay-enable efficient switching up to several hundred kHz in synchronous buck and half-bridge topologies.

Key Specifications

Pinout & Package

Package: PG-TDSON-8-4 - Thermally optimized 8-pin leadless surface-mount package with exposed drain pad (pins 1–4 and 5–8 are duplicated for parallel channel routing; pin 1 = G1, pin 2 = S1, pin 3 = D1, pin 4 = D1; pin 5 = G2, pin 6 = S2, pin 7 = D2, pin 8 = D2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IPG15N06S3L-45, the -40 variant offers lower R_DS(on) for reduced conduction loss but trades off slightly higher Q_g, while IRF7341PBF lacks automotive qualification and thermal capability-making the IPG15N06S3L-45 optimal for AEC-Q101-compliant, high-reliability 48 V systems.

Availability

IPG15N06S3L-45 is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and industrial actuator driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPG15N06S3L-45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS®-T family-designed specifically for high-current, high-temperature automotive power switching applications demanding AEC-Q101 compliance and avalanche ruggedness.

FAQ

What is the maximum allowable gate-source voltage for IPG15N06S3L-45?

The absolute maximum V_GS is ±16 V, qualified at –5 V and +16 V per specification. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10 V to +12 V for reliable long-term performance, especially under transient conditions.

Can both channels be paralleled to increase current capacity?

No-channels are electrically isolated with separate gate, source, and drain terminals. They are not internally matched for current sharing and lack shared source sensing. Paralleling requires external current-balancing resistors and careful layout to avoid thermal runaway.

Is the PG-TDSON-8-4 package compatible with standard reflow profiles?

Yes-it is MSL1 rated for peak reflow temperatures up to 260 °C, fully compatible with IPC/JEDEC J-STD-020 Class 3 reflow profiles. The exposed drain pad must be soldered to ≥6 cm² of 70 µm copper for thermal performance per datasheet layout guidelines.

Does the 100% avalanche test apply to each channel independently?

Yes-the datasheet specifies "100% Avalanche tested" with E_AS = 47 mJ and I_AS = 15 A per channel. Testing is performed individually on each transistor during final test, confirming independent ruggedness for inductive load commutation.