Infineon Technologies IPG16N10S461AATMA1

Overview

IPG16N10S461AATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 100 V V_DS, 16 A continuous drain current (T_C = 25 °C), and 61 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested-designed for automotive high-side/low-side switching in engine control units and body electronics.

For engineers reviewing the IPG16N10S461AATMA1 datasheet, IPG16N10S461AATMA1 pinout, IPG16N10S461AATMA1 application, or IPG16N10S461AATMA1 equivalent, key selection criteria include its dual-channel layout, 5.2 K/W R_thJC, 33 mJ single-pulse avalanche energy, integrated body diode with 1.3 V V_SD, and AOI-compatible marking "4N1061".

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single PG-TDSON-8 thermally enhanced leadless package with exposed drain pad. Each channel supports independent gate drive and shares common source connection via internal bonding-enabling half-bridge or synchronous rectifier topologies without external paralleling.

Its OptiMOS™-T2 process delivers low gate charge (Q_g = 5.4–9.5 nC), fast switching (t_r/t_f ≤ 1 ns / 5 ns), and robust dynamic performance: C_iss = 374–580 pF, C_oss = 120–240 pF, and Crss = 10–20 pF at V_DS = 25 V, enabling high-frequency DC-DC conversion and motor phase control.

Key Specifications

Pinout & Package

PG-TDSON-8 (8-pin leadless surface-mount package) with exposed drain pad on bottom side for optimal thermal dissipation. Pin 1–4 and 5–8 form two independent channel sets sharing source terminals internally.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IPG16N10S461AATMA1, the AATMA2 offers identical performance in alternate packaging, while IRF7341PBF lacks automotive qualification, avalanche ruggedness, and dual-channel integration-making it unsuitable for safety-critical vehicle systems.

Availability

IPG16N10S461AATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, body electronics modules, and on-board charger auxiliary power supplies requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPG16N10S461AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive powertrain and chassis systems.

FAQ

What is the maximum allowable gate-source voltage for IPG16N10S461AATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. Recommended drive voltage is 10 V for full R_DS(on) specification compliance; 5 V is sufficient for logic-level switching but increases conduction loss by ~30% due to higher R_DS(on).

Does IPG16N10S461AATMA1 require external freewheeling diodes in inductive load circuits?

No. Its integrated body diode has 1.3 V forward voltage at 16 A and 50 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling in motor and solenoid drives. However, for high-di/dt applications (>100 A/µs), an external Schottky diode may improve efficiency.

How is thermal performance affected when both channels operate simultaneously?

Simultaneous operation increases total power dissipation but does not alter R_thJC per channel. The 5.2 K/W value applies per channel with dedicated PCB copper area. Shared thermal mass raises junction temperature faster; design must allocate ≥12 cm² total copper (6 cm² per channel) and verify T_j < 175 °C using worst-case P_tot = 2 × (I_D² × R_DS(on)).

Can IPG16N10S461AATMA1 be used in a single-ended forward converter primary switch?

No. Its 100 V V_DS rating is insufficient for typical forward converter primary-side operation, where reflected output voltage plus input spikes often exceed 150 V. It is appropriate only for secondary-side synchronous rectification or auxiliary supply switches in such topologies.