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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IPG16N10S461ATMA1

Name: IPG16N10S461ATMA1
Brand: Infineon Technologies
SKU: IPG16N10S461ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPG16N10S461ATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: IPG16N10S461ATMA1.pdf

Description:: MOSFET 2N-CH 100V 16A 8TDSON

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Product details

Overview

IPG16N10S461ATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 100 V V_DS, 16 A continuous drain current (T_C = 25 °C), and 61 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C, features 100% single-pulse avalanche testing (E_AS = 33 mJ at I_D = 8 A), and is used in automotive body control modules for high-side load switching.

For engineers reviewing the IPG16N10S461ATMA1 datasheet, IPG16N10S461ATMA1 pinout, IPG16N10S461ATMA1 application, or IPG16N10S461ATMA1 equivalent, key selection criteria include its dual-channel layout, 5.2 K/W R_thJC, 374–580 pF C_iss, integrated avalanche ruggedness, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This device implements two identical OptiMOS™-T2 silicon die in a single thermally optimized PG-TDSON-8 package with exposed drain pad for low thermal resistance. Each channel supports independent gate drive, with shared source terminals and isolated drain paths enabling dual high-side or half-bridge configurations.

Its gate threshold voltage (2.0–3.5 V) and plateau voltage (5.4 V) support robust TTL/CMOS-compatible driving, while dynamic parameters-including 3.0 nC Q_gs, 2.6 nC Q_gd, and 9.5 nC Q_g-enable fast switching with controlled EMI in 12 V/24 V automotive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a (120 V peak).
R_DS(on) max	61 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 16 A DC load current.
I_D cont	16 A at T_C = 25 °C - Supports high-current solenoid or lamp drivers without external heatsinking.
E_AS	33 mJ (I_D = 8 A) - Sustains inductive turn-off energy without failure in relay or motor control.
R_thJC	5.2 K/W - Allows direct PCB copper thermal coupling to chassis ground for efficient heat extraction.
C_iss	374–580 pF - Sets gate drive strength requirement: ≥1 A peak for ≤10 ns rise time with 11 Ω gate resistor.
Q_g	5.4–9.5 nC - Determines total gate charge needed per switching cycle; impacts driver IC selection and power loss.

Pinout & Package

PG-TDSON-8 package with exposed drain pad (pins 1–3 and 5–7 are source/drain/gate connections; pin 4 and pin 8 are source terminals; pin 6 is gate of Channel 2; pin 1 is gate of Channel 1). Thermal pad on underside must be soldered to PCB copper for R_thJC compliance.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate 1 (G1)	Controls first N-channel channel; requires 10 V drive for full R_DS(on) performance.
2	Drain 1 (D1)	High-side switch output node; electrically tied to thermal pad for low-inductance path.
3	Source 1 (S1)	Reference node for Channel 1; internally connected to pins 4 and 8.
4	Source common (S)	Shared source terminal for both channels; connects to system ground or low-side return.
5	Drain 2 (D2)	Second high-side output; independent of D1 but shares thermal interface.
6	Gate 2 (G2)	Independent control input for second channel; same V_GS(th) and drive requirements as G1.
7	Source 2 (S2)	Redundant source connection for Channel 2; tied internally to pins 3 and 4.
8	Source common (S)	Secondary source tie point; improves current sharing and reduces bond-wire inductance.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including engine bay environments up to 175 °C junction temperature.
100% single-pulse avalanche tested	Guarantees robustness against inductive kickback in relay, fuel injector, and fan motor drives.
OptiMOS™-T2 silicon technology	Delivers lower R_DS(on) × Q_g figure-of-merit than prior generation, reducing switching + conduction losses.
MSL1 rating (260 °C peak reflow)	Enables compatibility with standard lead-free PCB assembly processes without moisture sensitivity concerns.
Integrated body diode	Supports freewheeling in half-bridge topologies with 1.0–1.3 V V_SD at 16 A and 50 ns t_rr.

Applications

Automotive Body Control Module

LED Headlamp Driver

Use Scenario: Centralized switching of door locks, window lifts, and interior lighting via 12 V supply rail.

IC Role / Device Role / Timing Role: Dual high-side power switch managing two independent loads with individual enable control.

Use Value: Eliminates need for discrete dual-MOSFET layouts; reduces BOM count and PCB area by 40% versus discrete solutions.

Use Scenario: PWM-controlled current regulation for adaptive front-lighting system (AFS) matrix LED arrays.

IC Role / Device Role / Timing Role: High-speed load switch enabling >1 kHz dimming with minimal dead-time distortion.

Use Value: Achieves <2% current ripple at 2 A due to low 61 mΩ R_DS(on) and 50 ns diode t_rr.

Engine Cooling Fan Controller

Start-Stop System Solenoid Driver

Use Scenario: Variable-speed control of brushless DC cooling fans using phase-shifted PWM across dual channels.

IC Role / Device Role / Timing Role: Half-bridge upper-arm switch with synchronized gate timing and avalanche energy absorption.

Use Value: Handles 33 mJ turn-off energy without snubber, enabling compact fan module design.

Use Scenario: High-reliability engagement/disengagement of starter motor solenoid during engine restart cycles.

IC Role / Device Role / Timing Role: Single-pole double-throw (SPDT) replacement for electromechanical relay with zero contact bounce.

Use Value: Supports >100,000 cycles at 16 A with no wear-out mechanism, exceeding mechanical relay lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB180N10N3 G	Single-channel, 100 V, 180 A, TO-263 package; higher current, larger footprint, no dual-gate integration.	Requires two devices + extra gate drivers for dual-load control; better suited for high-power single-load applications.	Select when peak current exceeds 16 A per channel or thermal mass demands TO-263 mounting.
BSC014N06LS	Single-channel, 60 V, 100 A, PG-TDSON-8; lower voltage rating, higher current, no AEC-Q101 certification.	Lacks automotive qualification and 100 V capability; unsuitable for 24 V commercial vehicle or load-dump tolerant designs.	Select only for non-automotive 12 V industrial controls where cost outweighs qualification requirements.

Compared with IPB180N10N3 G and BSC014N06LS, IPG16N10S461ATMA1 uniquely delivers dual-channel integration, AEC-Q101 compliance, and 100 V rating in a compact PG-TDSON-8 package-making it optimal for space-constrained, safety-critical automotive load switching where channel independence and qualification are mandatory.

Availability

IPG16N10S461ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting systems, and engine management subsystems requiring stable component supply across multi-year production programs.

Supply support for IPG16N10S461ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability automotive power distribution and load switching applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPG16N10S461ATMA1 supports continuous operation up to 175 °C junction temperature, validated per AEC-Q101 stress test conditions. Derating curves in the datasheet define safe operating area limits above 125 °C ambient, with thermal resistance R_thJC = 5.2 K/W enabling reliable performance in under-hood environments.

Does this device require external gate resistors for automotive EMI compliance?

Yes-gate resistors are required to control dv/dt and di/dt. The typical gate charge (Q_g = 5.4–9.5 nC) and low C_iss (374–580 pF) necessitate 10–22 Ω series gate resistors to meet CISPR 25 Class 5 radiated emissions limits in 12 V systems, especially when driving inductive loads.

Can both channels be paralleled to increase current capacity?

No-channels are not designed for paralleling. They share a common source and thermal path but have independent gates and drains; paralleling would cause current imbalance due to parametric mismatch and thermal coupling, risking premature failure. Use a single higher-current device instead.

Is the body diode suitable for synchronous rectification in DC-DC converters?

No-the body diode has 1.0–1.3 V forward voltage and 50 ns reverse recovery time, making it unsuitable for high-frequency synchronous rectification. Its design intent is freewheeling in low-frequency (<10 kHz) inductive load switching, not power conversion efficiency optimization.

IPG16N10S461ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 100V

Current - Continuous Drain (Id) @ 25°C:: 16A

Rds On (Max) @ Id, Vgs:: 61mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 9µA

Gate Charge (Qg) (Max) @ Vgs:: 7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 490pF @ 25V

Power - Max:: 29W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-4

IPG16N10S461ATMA1 FAQ

1.How can I place an order for IPG16N10S461ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG16N10S461ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG16N10S461ATMA1 reliable?

The price and inventory of IPG16N10S461ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG16N10S461ATMA1 is usually 5 days.

3.What payment methods are accepted for IPG16N10S461ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPG16N10S461ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPG16N10S461ATMA1?

IPG16N10S461ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG16N10S461ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG16N10S461ATMA1?

For technical support, including IPG16N10S461ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG16N10S461ATMA1 requirements.

6.How does Aetrix verify that IPG16N10S461ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPG16N10S461ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG16N10S461ATMA1 meets industry standards.

7.What is the process for return or replacement of IPG16N10S461ATMA1?

All IPG16N10S461ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPG16N10S461ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG16N10S461ATMA1 part is unused and in its original packaging.

Return procedure for IPG16N10S461ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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