Infineon Technologies IPG16N10S4L61AATMA1

Overview

IPG16N10S4L61AATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET with 100 V V_DS, 16 A continuous drain current (T_C = 25 °C), and 61 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, rated for 175 °C operation, and housed in PG-TDSON-8-10 package - designed for automotive high-side/low-side switching in DC-DC converters and motor control.

For engineers reviewing the IPG16N10S4L61AATMA1 datasheet, IPG16N10S4L61AATMA1 pinout, IPG16N10S4L61AATMA1 application, or IPG16N10S4L61AATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.1–2.1 V), 100% avalanche ruggedness (E_AS = 33 mJ), thermal resistance (R_thJC = 5.2 K/W), and AOI feasibility for automated optical inspection in automotive PCB assembly.

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single PG-TDSON-8-10 thermally enhanced leadless package with exposed drain pad. Each channel supports independent logic-level gate drive (V_GS(th) typ. 1.6 V) and delivers 16 A I_D at T_C = 25 °C with R_DS(on) ≤ 61 mΩ at V_GS = 10 V and I_D = 16 A.

It features fully characterized dynamic parameters including C_iss = 845 pF (max), Q_g = 11 nC (max), and t_r/t_f < 2 ns / < 4 ns, enabling high-frequency switching in synchronous buck regulators and H-bridge motor drivers under 100 V bus conditions.

Key Specifications

Pinout & Package

IPG16N10S4L61AATMA1 uses the PG-TDSON-8-10 (8-pin, 5 mm × 6 mm, 0.65 mm pitch) thermally optimized leadless package with dual drain pads for parallel current handling and low-inductance layout. The package is MSL1 rated for peak reflow up to 260 °C and supports automatic optical inspection (AOI).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with IPG16N10S4L61AATMA1, the A2 variant offers identical performance in alternate packaging, while IRF7341TRPBF trades automotive reliability and 100 V rating for lower cost in non-automotive 24 V applications - making the original part irreplaceable for AEC-Q101-compliant designs.

Availability

IPG16N10S4L61AATMA1 is available at Aetrix Electronics and suitable for automotive power conversion, brushed DC motor control, LED headlamp drivers, and industrial 48 V supply systems requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPG16N10S4L61AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 Power-Transistor product line, engineered specifically for high-efficiency, high-reliability automotive power stages requiring AEC-Q101 compliance, logic-level drive, and robust avalanche performance.

FAQ

What is the maximum allowable gate-source voltage for IPG16N10S4L61AATMA1?

The absolute maximum V_GS is ±16 V per datasheet Rev. 1.0. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10 V to +12 V for reliable long-term performance, especially under temperature cycling. Gate drive circuits must include clamping (e.g., Zener diodes) if using higher-voltage drivers.

Does IPG16N10S4L61AATMA1 support paralleling of its two channels for higher current?

Yes - both channels share the same die characteristics and thermal path, enabling safe current sharing when gates are driven identically and sources are kept at equal potential. Layout symmetry and matched gate resistors are required to ensure <5% current imbalance at 32 A total load.

Is the PG-TDSON-8-10 package RoHS-compliant and halogen-free?

Yes - the device is certified as a Green Product per Infineon's documentation, meeting RoHS Directive 2011/65/EU and being completely halogen-free (no brominated flame retardants or chlorine-based materials). Full material declarations are available via Infineon's Eco Reports portal.

Can IPG16N10S4L61AATMA1 be used in linear mode (beyond saturation)?

No - it is not characterized or guaranteed for linear (ohmic) operation. Safe Operating Area (SOA) curves in the datasheet limit linear use to short pulses (<100 µs) below 20 V V_DS and 8 A. Continuous linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on).