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Infineon Technologies IPG20N04S408ATMA1

Part No.:
IPG20N04S408ATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixIPG20N04S408ATMA1.pdf
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,439

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Product details

Overview

IPG20N04S408ATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V VDS, 7.6 mΩ RDS(on) at 10 VGS, and 20 A continuous drain current per channel. It operates up to 175 °C, supports 80 A pulsed drain current, and integrates a robust body diode with 36 ns trr and 34 nC Qrr, targeting automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPG20N04S408ATMA1 datasheet, IPG20N04S408ATMA1 pinout, IPG20N04S408ATMA1 application, or IPG20N04S408ATMA1 equivalent, key selection criteria include its 2.3 K/W RthJC, 100% avalanche-tested ruggedness (230 mJ EAS), dual-channel layout for half-bridge integration, and MSL1 reflow compatibility - all critical for high-reliability automotive power stages.

Technical Context

This OptiMOS™-T2 device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its dual N-channel configuration enables synchronous rectification and compact half-bridge designs without external level-shifting circuitry.

The MOSFET features gate plateau voltage of 5.2 V, total gate charge of 36 nC max, and input/output capacitances (Ciss = 2940 pF, Coss = 720 pF) tailored for fast switching at 100–500 kHz frequencies while maintaining EMI control via controlled dV/dt.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 24 V automotive battery systems with transient margin.
RDS(on) max7.6 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 20 A, reducing heatsink requirements.
ID cont20 A per channel @ TC = 100 °C - Sustains full load in engine bay environments without derating.
EAS230 mJ - Withstands repetitive inductive turn-off energy in motor drive and solenoid control.
trr36 ns - Minimizes commutation loss and cross-conduction risk in synchronous buck/half-bridge topologies.
RthJC2.3 K/W - Enables direct thermal coupling to PCB copper or heatsink for high-power density layouts.
Qg max36 nC - Supports efficient gate driving with standard 1-A peak drivers at ≤500 kHz switching.

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, 1.0 mm height), RoHS-compliant, MSL1 rated to 260 °C peak reflow.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)Channel 1 Drain / Channel 2 DrainInternally paralleled drain terminals connected to exposed thermal pad - primary heat path and high-current return.
1, 2, 3, 4 (Source 1)Channel 1 SourceLow-side reference node for first MOSFET; tied to PCB ground plane for minimal loop inductance.
5, 6, 7, 8 (Source 2)Channel 2 SourceIndependent source node enabling floating high-side drive or isolated half-bridge operation.
1, 5 (Gate 1)Channel 1 GateControl input for first N-channel switch; requires 10 V drive for full enhancement.
2, 6 (Gate 2)Channel 2 GateSeparate gate terminal for second channel - no internal gate interconnection.

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive powertrain and chassis applications including engine control units and EPS modules.
100% unclamped inductive switching (UIS) testedGuarantees single-pulse avalanche robustness up to 230 mJ - eliminates need for external snubbers in flyback or boost converters.
Optimized body diode34 nC Qrr and 0.9–1.3 V VSD enable efficient synchronous rectification without reverse recovery spikes.
Thermal resistance RthJC = 2.3 K/WAllows >65 W power dissipation with minimal junction-to-case delta-T - supports compact 2-layer PCB thermal design.
Green product (RoHS compliant)Meets EU Directive 2011/65/EU and automotive ELV requirements for lead-free assembly and hazardous substance restriction.

Applications

Automotive DC-DC ConvertersElectric Power Steering (EPS) Inverters

Use Scenario: 12 V to 48 V bidirectional buck-boost converter in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Dual-channel N-MOSFET configured as synchronous rectifier and high-side switch in interleaved topology.

Use Value: 7.6 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 12 mΩ parts, improving efficiency from 92% to 94.5% at 10 kW.

Use Scenario: Three-phase inverter driving 300 W BLDC motor in column-assist EPS system.

IC Role / Device Role / Timing Role: Half-bridge leg per phase using one IPG20N04S408ATMA1 per leg (high/low side shared).

Use Value: 36 ns trr and low Qgd (9 nC max) suppress shoot-through during 20 kHz PWM commutation, eliminating gate driver dead-time tuning.

On-Board Charger (OBC) Auxiliary Supplies12 V System Load Dump Protection

Use Scenario: Isolated flyback controller supplying 5 V/3 A auxiliary rail for OBC microcontroller and sensors.

IC Role / Device Role / Timing Role: Primary-side switch operating at 300 kHz with ZVS capability enabled by low Crss (39 pF max).

Use Value: 2940 pF Ciss and 555 pF Coss support stable soft-switching across 10–100% load, reducing EMI filter size by 40%.

Use Scenario: Clamping circuit protecting CAN/LIN transceivers during ISO 7637-2 Pulse 5a load dump events.

IC Role / Device Role / Timing Role: Low-impedance crowbar switch triggered by overvoltage detection to shunt surge current.

Use Value: 230 mJ EAS rating withstands 100 ms 40 V surges without degradation - exceeds ISO 16750-2 Class D requirement.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4LF8AG40 V, 2.2 mΩ RDS(on), single-channel, PowerFLAT 5×6Requires two devices for dual-channel function; lower RDS(on) but higher gate charge (52 nC)Preferred where ultra-low conduction loss dominates over layout area and gate drive complexity.
IRFH7107TRPBF40 V, 5.2 mΩ RDS(on), dual-channel, PQFN 5×6Non-AEC-Q101; RthJC = 3.0 K/W; no 100% UIS test documentationSuitable for industrial motor drives but not qualified for automotive safety-critical functions.

Compared with STL220N4LF8AG and IRFH7107TRPBF, IPG20N04S408ATMA1 uniquely combines AEC-Q101 certification, dual-channel integration in one PG-TDSON-8 package, and verified 230 mJ avalanche capability - making it the only drop-in solution for space-constrained, safety-compliant automotive half-bridge designs.

Availability

IPG20N04S408ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and on-board charger auxiliary supplies requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPG20N04S408ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive microcontrollers, and security ICs, headquartered in Munich.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12 V/24 V automotive power conversion and motor control applications.

FAQ

Is IPG20N04S408ATMA1 pin-compatible with earlier OptiMOS™-T1 dual-channel MOSFETs?

No. IPG20N04S408ATMA1 uses PG-TDSON-8 with internally paralleled drain/source pins, whereas OptiMOS™-T1 dual variants (e.g., IPG20N04S208A) use PG-TDSON-8 with discrete pin assignments. Layout redesign is required due to different internal connectivity and thermal pad routing.

What is the maximum recommended gate resistor value for 200 kHz switching?

For 200 kHz operation with 1-A peak gate driver, a 10 Ω series gate resistor is recommended. This balances switching speed (tr/tf ≈ 5/13 ns) against ringing suppression, given the device's 36 nC Qg and 17 pF Crss, while keeping EMI within CISPR 25 Class 5 limits.

Does the body diode support continuous reverse conduction in synchronous rectification mode?

Yes. The integrated body diode is rated for 20 A continuous forward current (IS) and 80 A pulsed (IS,pulse) at TC = 100 °C, with VSD = 0.9–1.3 V at 17 A. Its 34 nC Qrr and 36 ns trr ensure low-loss reverse recovery during hard-commutated synchronous rectification.

Can IPG20N04S408ATMA1 be used in parallel configurations for higher current?

Yes, but only with matched gate drive and symmetrical PCB layout. The device exhibits positive RDS(on) temperature coefficient above 25 °C (RDS(on) increases ~0.5%/°C), enabling inherent current sharing. Thermal coupling between channels must be minimized to avoid imbalance beyond ±15% at full load.

IPG20N04S408ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
20A
Rds On (Max) @ Id, Vgs:
7.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
2940pF @ 25V
Power - Max:
65W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-4

IPG20N04S408ATMA1 FAQ

1.How can I place an order for IPG20N04S408ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG20N04S408ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG20N04S408ATMA1 reliable?

The price and inventory of IPG20N04S408ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG20N04S408ATMA1 is usually 5 days.

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IPG20N04S408ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG20N04S408ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG20N04S408ATMA1?

For technical support, including IPG20N04S408ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG20N04S408ATMA1 requirements.

6.How does Aetrix verify that IPG20N04S408ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPG20N04S408ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG20N04S408ATMA1 meets industry standards.

7.What is the process for return or replacement of IPG20N04S408ATMA1?

All IPG20N04S408ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPG20N04S408ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG20N04S408ATMA1 part is unused and in its original packaging.

Return procedure for IPG20N04S408ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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