Infineon Technologies IPG20N04S409AATMA1

Overview

IPG20N04S409AATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 8.6 mΩ R_DS(on) at 10 V_GS, and 20 A continuous drain current per channel. It operates up to 175 °C junction temperature and is 100% avalanche tested for automotive power switching in motor control and DC-DC converters.

For engineers reviewing the IPG20N04S409AATMA1 datasheet, IPG20N04S409AATMA1 pinout, IPG20N04S409AATMA1 application, or IPG20N04S409AATMA1 equivalent, key selection criteria include its 2.8 K/W R_thJC, 145 mJ single-pulse avalanche energy, integrated body diode with 34 ns t_rr, and suitability for high-reliability 12 V/24 V automotive systems requiring AOI-compatible SMD assembly.

Technical Context

This dual N-channel MOSFET uses Infineon's OptiMOS™-T2 silicon process optimized for low R_DS(on) × Q_g figure-of-merit in automotive-grade power stages. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The device integrates matched channels with identical static and dynamic parameters-R_DS(on) max 8.6 mΩ, C_iss typ 2250 pF, Q_g typ 28 nC-and shares a common source configuration in the PG-TDSON-8 thermally enhanced leadless package with exposed drain pad.

Key Specifications

Pinout & Package

IPG20N04S409AATMA1 is housed in PG-TDSON-8 (3.3 mm × 3.3 mm), a thermally optimized leadless package with exposed drain pad on bottom side for direct PCB thermal coupling. Pin 1–4 and 5–8 are symmetrical dual-channel terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Compared with IPG20N04S409AATMA1, the AATMA2 offers identical performance in alternate packaging, while IRFH7107TRPBF increases board area and gate drive complexity but provides marginally lower R_DS(on) per channel at the cost of integration and thermal coupling benefits.

Availability

IPG20N04S409AATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended product lifecycles.

Supply support for IPG20N04S409AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the OptiMOS™-T2 automotive power transistor family, designed specifically for high-efficiency, high-reliability switching in 12 V–48 V vehicle electrical architectures.

FAQ

What is the maximum allowable gate-source voltage for IPG20N04S409AATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, consistent with AEC-Q101 stress limits and OptiMOS™-T2 gate oxide integrity testing.

Does IPG20N04S409AATMA1 support paralleling of its two channels for higher current?

No - the two channels share a common drain pad but have isolated source terminals; paralleling would require external source node balancing and introduces mismatch risk. The device is intended for independent channel operation in half-bridge, dual-output, or redundancy configurations-not parallel conduction.

Is the body diode in IPG20N04S409AATMA1 suitable for synchronous rectification?

Yes - its 34 ns reverse recovery time (t_rr) and 30 nC Q_rr are characterized for 20 V reverse bias and 100 A/µs di/dt, making it appropriate for synchronous rectification in 100–300 kHz DC-DC topologies where fast recovery minimizes switching loss and ringing.

How does the PG-TDSON-8 package affect thermal design compared to SO-8?

The PG-TDSON-8 exposes the drain pad directly to the PCB, achieving 2.8 K/W R_thJC - nearly 3× better than SO-8's typical 8 K/W. This requires a minimum 6 cm² copper pour on inner layers with ≥6 thermal vias under the pad, but enables full 20 A/channel operation without external heatsinks in automotive under-hood environments.