Infineon Technologies IPG20N04S412AATMA1

Overview

IPG20N04S412AATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8-10 package, rated for 40 V V_DS, 12.2 mΩ R_DS(on) at 10 V_GS, and 20 A continuous drain current per channel. It operates up to 175 °C, features 100% avalanche testing, and is used in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPG20N04S412AATMA1 datasheet, IPG20N04S412AATMA1 pinout, IPG20N04S412AATMA1 application, or IPG20N04S412AATMA1 equivalent, key selection criteria include its 3.7 K/W junction-to-case thermal resistance, 14–18 nC total gate charge, 1130–1470 pF input capacitance, and suitability for high-reliability 12 V/24 V automotive power stages.

Technical Context

This dual N-channel MOSFET employs trench-based OptiMOS™-T2 technology optimized for low conduction and switching losses in synchronous rectification and half-bridge configurations. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.5 V gate plateau voltage supports stable Miller region control during switching transitions.

The device integrates an intrinsic body diode with 0.9–1.3 V forward voltage at 17 A and 32 ns reverse recovery time, enabling efficient freewheeling in inductive loads. Thermal design is anchored by a validated 3.7 K/W R_thJC and 60 K/W R_thJA on 6 cm² PCB copper area, supporting high-power density layouts in constrained automotive modules.

Key Specifications

Pinout & Package

Package: PG-TDSON-8-10 - Exposed-drain thermally enhanced 8-pin surface-mount package with 10 mm × 8 mm footprint and 1.0 mm height; optimized for automated optical inspection (AOI) and reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive N-channel MOSFET applications.

Compared with IPG20N04S412AATMA1, the logic-level IPG20N04S4L12AATMA1 trades conduction loss for low-voltage drive compatibility, while IRF7759L2TRPBF offers similar R_DS(on) but omits automotive qualification, thermal robustness, and dual-channel integration-making it unsuitable for safety-critical or space-constrained automotive modules.

Availability

IPG20N04S412AATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, BLDC motor inverters, and on-board charger auxiliary supplies requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPG20N04S412AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This part belongs to the OptiMOS™-T2 automotive power transistor product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 24 V automotive subsystems including engine control, ADAS, and electrified powertrains.

FAQ

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is +175 °C, and the device is fully specified for continuous operation across this range. Derating curves in the datasheet show that at T_C = 100 °C, the device sustains 20 A with V_GS ≥ 6 V. Thermal design must maintain T_j ≤ 175 °C under worst-case ambient and power dissipation conditions using the provided R_thJC = 3.7 K/W value.

Does IPG20N04S412AATMA1 support paralleling of channels for higher current?

No-channels share a common drain pad but have independent source and gate terminals; however, they are not matched for current sharing due to process variation. The datasheet specifies parameters per channel, not combined. For >20 A applications, use separate discrete devices with individual thermal paths and gate drive isolation to ensure balanced conduction and avoid thermal runaway.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes-the intrinsic body diode has a typical V_SD of 0.9 V at 17 A and 25 °C, with t_rr = 32 ns and Q_rr = 25 nC. These values allow effective synchronous rectification at ≤300 kHz, though external Schottky diodes may be preferred for ultra-low-loss designs above 200 kHz due to lower Q_rr and V_F.

How does the 100% avalanche test impact field reliability?

Each unit undergoes a single-pulse inductive avalanche stress test at I_AS = 15 A and E_AS = 80 mJ, verifying robustness against unclamped inductive switching events. This screening significantly reduces infant mortality in automotive applications where load dump or relay bounce can generate transient overvoltage, extending FIT rate performance beyond standard JEDEC AEC-Q101 requirements.