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Infineon Technologies IPG20N04S412ATMA1

Part No.:
IPG20N04S412ATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixIPG20N04S412ATMA1.pdf
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,074

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Product details

Overview

IPG20N04S412ATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V VDS, 12.2 mΩ RDS(on) at 10 V VGS, and 20 A continuous drain current per channel. It operates up to 175 °C, features 100% single-pulse avalanche testing, and is optimized for automotive body electronics and high-efficiency DC-DC converters.

For engineers reviewing the IPG20N04S412ATMA1 datasheet, IPG20N04S412ATMA1 pinout, IPG20N04S412ATMA1 application, or IPG20N04S412ATMA1 equivalent, key selection criteria include its 3.7 K/W junction-to-case thermal resistance, 14–18 nC total gate charge, 1130–1470 pF input capacitance, and integrated freewheeling diode with 0.9–1.3 V forward voltage at 17 A.

Technical Context

This dual N-channel MOSFET uses Infineon's OptiMOS™-T2 silicon technology to deliver low conduction and switching losses in automotive-grade packaging. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.5 V gate plateau voltage supports stable turn-on under varying load conditions.

The device integrates a co-packaged Schottky-like body diode with 32 ns reverse recovery time and 25 nC Qrr, enabling efficient synchronous rectification and flyback operation. Thermal performance is validated with MSL1 rating (260 °C peak reflow) and 6 cm² PCB copper area requirement for specified RthJA = 60 K/W.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V automotive systems with transient margin
RDS(on) max12.2 mΩ @ VGS = 10 V, ID = 17 A - Enables <1.5 W conduction loss at 20 A
ID cont20 A per channel @ TC = 25 °C - Supported by bondwire-limited current handling
EAS80 mJ @ ID = 10 A - Confirmed single-pulse avalanche energy for inductive load switching
Qg14–18 nC - Determines gate driver power and switching speed in hard-switched topologies
tr/tf2 ns / 8 ns - Fast edge rates reduce switching transition losses in high-frequency SMPS
RthJC3.7 K/W - Enables direct heatsinking via exposed drain pad for thermal management

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint), RoHS-compliant green product.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 7, 8Drain (Channel 1 & 2)Internally paralleled drain connections tied to exposed thermal pad - primary heat path and high-current return
5Source 1Low-side reference node for Channel 1 - connects to ground or low-side shunt in half-bridge
6Source 2Independent source terminal for Channel 2 - enables dual independent switch control
G1, G2Gate 1 / Gate 2Separate gate inputs (pins not labeled but assigned to channels per marking "4N0412") - allow asynchronous or complementary drive

Key Features

FeatureDesign Value
AEC-Q101 qualificationValidated for automotive applications including engine control modules and lighting drivers
100% single-pulse avalanche testedGuarantees ruggedness against inductive kickback in relay/motor drive circuits
MSL1 reflow ratingSupports standard lead-free SMT assembly without moisture sensitivity concerns
Integrated body diodeEnables self-synchronous operation in buck converters without external diode
Exposed drain thermal padProvides low-impedance thermal path to PCB copper, critical for >10 W power dissipation

Applications

Automotive Door ModuleLED Headlamp Driver

Use Scenario: Driving multiple window lift motors and mirror actuators with PWM-controlled H-bridge outputs.

IC Role / Device Role / Timing Role: Dual N-channel power switch providing bidirectional motor control and regenerative braking path.

Use Value: 12.2 mΩ RDS(on) minimizes I²R heating during 20 A stall currents; 175 °C rating ensures reliability in sealed module enclosures.

Use Scenario: High-side current regulation for adaptive LED matrix arrays in automotive headlamps.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier and current sink in buck-boost LED driver stage.

Use Value: 32 ns trr and 25 nC Qrr reduce switching losses at 500 kHz operation; AEC-Q101 compliance meets OEM functional safety requirements.

12 V DC-DC ConverterBody Control Unit Load Switch

Use Scenario: Primary switch in 12 V input, 5 V/20 A output synchronous buck converter for infotainment power rail.

IC Role / Device Role / Timing Role: High-efficiency main FET with integrated freewheeling diode for continuous conduction mode.

Use Value: 14–18 nC Qg allows fast turn-on with low-power gate drivers; 3.7 K/W RthJC enables compact heatsinkless design on 6 cm² PCB copper.

Use Scenario: Smart high-side load switch for HVAC blower, seat heater, and rear wiper subsystems.

IC Role / Device Role / Timing Role: Protected power distribution switch with overcurrent and thermal shutdown.

Use Value: 80 mJ EAS withstands inrush and short-circuit transients; 20 A continuous rating supports 250 W resistive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPG20N04S4L12ATMA1Logic-level gate (VGS(th) = 1.0–2.5 V); same RDS(on), package, and avalanche ratingPreferred for 3.3 V MCU-driven systems where 10 V gate drive is unavailableSelect when driving from low-voltage microcontrollers without level-shifting circuitry
IRF7341PBFHigher RDS(on) (24 mΩ), lower Qg (12 nC), non-AEC-Q101, SO-8 packageSuitable for industrial non-automotive DC-DC and motor control where qualification is not requiredChoose for cost-sensitive non-automotive designs needing smaller gate drive energy

Compared with IPG20N04S412ATMA1, the logic-level IPG20N04S4L12ATMA1 reduces system BOM count in 3.3 V domains, while IRF7341PBF trades automotive reliability for lower gate charge in commercial applications - neither offers identical thermal or qualification profile.

Availability

IPG20N04S412ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting drivers, and 12 V DC-DC converters requiring stable component supply across extended temperature and qualification requirements.

Supply support for IPG20N04S412ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-reliability automotive power distribution and efficient DC-DC conversion in constrained thermal environments.

FAQ

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum operating junction temperature is +175 °C, validated per AEC-Q101 stress testing. Continuous operation at this limit requires full thermal derating per the Safe Operating Area (SOA) curves on page 4 of the datasheet, with junction-to-case thermal resistance held at ≤3.7 K/W via proper PCB copper layout and heatsinking.

Does IPG20N04S412ATMA1 support parallel operation of both channels?

Yes - both channels share common drain terminals (pins 1,2,3,4,7,8) and have independent sources (pins 5 and 6) and gates (unlabeled but assigned per channel). Parallel use is supported for higher current capability, provided matched gate drive and symmetric PCB layout minimize current imbalance and thermal runaway.

Is the body diode suitable for continuous freewheeling in buck converters?

Yes - the integrated body diode is rated for 20 A continuous forward current and 80 A pulsed current per channel. Its 0.9–1.3 V VSD at 17 A and 32 ns trr make it suitable for synchronous rectification in buck converters up to 500 kHz, though external Schottky diodes may be preferred for ultra-low VF at light loads.

How is avalanche ruggedness verified for this part?

Avalanche ruggedness is confirmed by 100% single-pulse testing at ID = 10 A, yielding EAS = 80 mJ. Test conditions follow JEDEC JESD24-11, with energy measured across the full VDS–ID trajectory. This validates safe operation during inductive turn-off events such as solenoid or motor coil de-energization.

IPG20N04S412ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
20A
Rds On (Max) @ Id, Vgs:
12.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1470pF @ 25V
Power - Max:
41W
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-4

IPG20N04S412ATMA1 FAQ

1.How can I place an order for IPG20N04S412ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG20N04S412ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG20N04S412ATMA1 reliable?

The price and inventory of IPG20N04S412ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG20N04S412ATMA1 is usually 5 days.

3.What payment methods are accepted for IPG20N04S412ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPG20N04S412ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPG20N04S412ATMA1?

IPG20N04S412ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG20N04S412ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG20N04S412ATMA1?

For technical support, including IPG20N04S412ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG20N04S412ATMA1 requirements.

6.How does Aetrix verify that IPG20N04S412ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPG20N04S412ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG20N04S412ATMA1 meets industry standards.

7.What is the process for return or replacement of IPG20N04S412ATMA1?

All IPG20N04S412ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPG20N04S412ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG20N04S412ATMA1 part is unused and in its original packaging.

Return procedure for IPG20N04S412ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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