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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IPG20N04S418AATMA1

Name: IPG20N04S418AATMA1
Brand: Infineon Technologies
SKU: IPG20N04S418AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPG20N04S418AATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: IPG20N04S418AATMA1.pdf

Description:: MOSFET 2N-CH 40V 20A 8TDSON

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Product details

Overview

IPG20N04S418AATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 20 A continuous drain current per channel at T_C = 25 °C, and 18 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is fully avalanche-tested-designed for automotive body control modules, LED headlight drivers, and high-reliability 12 V/24 V DC-DC power stages.

For engineers reviewing the IPG20N04S418AATMA1 datasheet, IPG20N04S418AATMA1 pinout, IPG20N04S418AATMA1 application, or IPG20N04S418AATMA1 equivalent, key selection criteria include its dual-channel layout with shared source configuration, 100% single-pulse avalanche energy rating (25 mJ), low gate charge (Q_g = 8.7–15.0 nC), and AOI-compatible packaging for automated optical inspection in automotive SMT lines.

Technical Context

This device implements two independent N-channel trench MOSFETs in a single PG-TDSON-8 thermally enhanced leadless package with exposed drain pad. Its gate threshold voltage (2.0–4.0 V) enables robust 3.3 V/5 V logic-level drive compatibility while maintaining noise immunity above 2 V under hot conditions.

The integrated body diode exhibits fast reverse recovery (t_rr = 21 ns typ., Q_rr = 10 nC) and low forward voltage (V_SD = 0.9–1.3 V at I_F = 17 A), supporting synchronous rectification and bidirectional switching in half-bridge topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - supports 12 V/24 V automotive systems with margin against load-dump transients
R_DS(on) max	18.4 mΩ at V_GS = 10 V, I_D = 17 A - enables <1.5 W conduction loss per channel at 20 A
I_D continuous	20 A per channel at T_C = 25 °C - validated for sustained operation in compact heatsinked layouts
E_AS	25 mJ single-pulse avalanche energy - ensures ruggedness during inductive turn-off events in motor drives
Q_g	8.7–15.0 nC - balances switching speed and gate driver stress in 100–500 kHz PWM applications
t_r/t_f	0.4 ns / 2.2 ns - supports fast edge rates with minimal overlap loss in bridge configurations
T_j max	+175 °C - qualified for under-hood environments including engine control units and HVAC actuators

Pinout & Package

IPG20N04S418AATMA1 uses the PG-TDSON-8 (exposed drain) surface-mount package with thermal pad on underside for PCB copper area cooling. Pin numbering follows standard top-view orientation: pins 1–4 and 5–8 form two identical 4-pin channel blocks (G-S-D-S), sharing common source terminals (pins 2 & 7).

Pin/Terminal	Circuit Role	Design Meaning
1, 5	Gate 1 / Gate 2	Independent gate inputs enabling separate PWM control of each channel
2, 7	Source 1 / Source 2	Internally tied to common source plane; electrically isolated but thermally coupled via substrate
3, 4, 6, 8	Drain 1 / Drain 2	Exposed copper pad connects all drain terminals; requires ≥6 cm² PCB copper area for R_thJC = 5.6 K/W

Key Features

Feature	Design Value
Dual-channel integration	Two matched N-MOSFETs in one package reduce board space by 40% vs discrete solutions in H-bridge motor drivers
AEC-Q101 qualification	Validated for automotive use across temperature, humidity, vibration, and lifetime stress profiles per JESD22-A108
100% avalanche tested	Each unit passes single-pulse E_AS screening at 25 mJ - eliminates field failures from inductive kickback
AOI-compatible marking	Laser-marked "4N0418" on top surface enables automated optical inspection without contrast agents or special lighting
Green product (RoHS)	Lead-free, halogen-free, and compliant with EU Directive 2011/65/EU - suitable for global automotive supply chains

Applications

Automotive Body Control Module

LED Headlight Driver

Use Scenario: Driving multiple solenoids, relays, and lamps in centralized BCM units with CAN/LIN interface.

IC Role / Device Role / Timing Role: High-side switch for 12 V loads with integrated current sensing capability via R_DS(on) monitoring.

Use Value: Dual-channel layout allows independent control of left/right turn signals and fog lamps using one footprint, reducing BOM count by 2x.

Use Scenario: Constant-current regulation for adaptive front-lighting systems (AFS) with dynamic beam shaping.

IC Role / Device Role / Timing Role: Low-side PWM switch in buck-derived constant-current LED driver stage operating at 200–300 kHz.

Use Value: 18.4 mΩ R_DS(on) limits conduction loss to <0.75 W at 20 A, enabling >95% efficiency and eliminating need for external heatsinks.

12 V/24 V DC-DC Converter

Electric Power Steering (EPS) Assist Motor Driver

Use Scenario: Synchronous rectification in secondary-side of isolated flyback or forward converters powering ADAS sensors.

IC Role / Device Role / Timing Role: Secondary-side N-MOSFET replacing Schottky diode to improve conversion efficiency and thermal performance.

Use Value: Fast t_rr (21 ns) and low Q_rr (10 nC) minimize reverse recovery losses, increasing full-load efficiency by 1.8% over diode-based designs.

Use Scenario: Half-bridge leg in 3-phase inverter driving 12 V assist motors in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switch with matched timing characteristics to upper-leg MOSFET for precise dead-time control.

Use Value: Matched R_DS(on) and gate charge between channels ensures balanced current sharing and reduced thermal imbalance in parallel operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPG20N04S4L18AATMA1	Logic-level variant: V_GS(th) = 1.0–2.2 V; R_DS(on) = 20.5 mΩ max at V_GS = 4.5 V	Better suited for 3.3 V microcontroller direct drive; higher R_DS(on) increases conduction loss at high current	Select when gate drive voltage is limited to ≤4.5 V and thermal margin permits +12% R_DS(on)
IRF7341TRPBF	Legacy dual N-MOSFET in SO-8; R_DS(on) = 28 mΩ at V_GS = 10 V; no AEC-Q101 or avalanche testing	Non-automotive grade; lacks thermal robustness for under-hood deployment	Only acceptable for cost-sensitive industrial prototypes where qualification is not required

Compared with IPG20N04S418AATMA1, the logic-level IPG20N04S4L18AATMA1 trades off conduction efficiency for lower gate drive voltage support, while IRF7341TRPBF offers legacy compatibility but fails to meet automotive reliability, thermal, or safety requirements.

Availability

IPG20N04S418AATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting systems, and 12 V/24 V DC-DC power conversion requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPG20N04S418AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 automotive power transistor family, engineered specifically for high-efficiency, high-reliability switching in 12 V/24 V vehicle electrical systems-including body control, lighting, and EPS.

FAQ

What is the maximum allowable gate-source voltage for IPG20N04S418AATMA1?

The absolute maximum gate-source voltage is ±20 V, as specified in the datasheet's "Maximum Ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable long-term performance, gate drive circuits should limit transient overshoot to ≤±15 V using clamping diodes or active gate control.

Can both channels be paralleled to increase current handling?

No-channels share a common thermal substrate and are not electrically isolated. Paralleling would cause thermal runaway due to mismatched R_DS(on) drift with temperature. The device is designed for independent channel operation only; total system current must remain within per-channel ratings.

Is the PG-TDSON-8 package compatible with standard reflow profiles?

Yes-it is MSL1 rated for peak reflow temperatures up to 260 °C, meeting IPC/JEDEC J-STD-020 requirements. Recommended profile uses ramp rate ≤3 °C/s, peak at 250–260 °C for ≤30 seconds, with preheat at 150–200 °C for 90–120 seconds.

Does the integrated body diode support synchronous rectification?

Yes-the body diode has characterized reverse recovery parameters (t_rr = 21 ns, Q_rr = 10 nC) and forward voltage (V_SD = 0.9–1.3 V), making it suitable for synchronous rectification in buck, flyback, and LLC topologies where controlled turn-on timing avoids shoot-through.

IPG20N04S418AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T2

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Rds On (Max) @ Id, Vgs:: 18.4mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:: 15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 789pF @ 25V

Power - Max:: 26W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PG-TDSON-8-10

IPG20N04S418AATMA1 FAQ

1.How can I place an order for IPG20N04S418AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG20N04S418AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG20N04S418AATMA1 reliable?

The price and inventory of IPG20N04S418AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG20N04S418AATMA1 is usually 5 days.

3.What payment methods are accepted for IPG20N04S418AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPG20N04S418AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPG20N04S418AATMA1?

IPG20N04S418AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG20N04S418AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG20N04S418AATMA1?

For technical support, including IPG20N04S418AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG20N04S418AATMA1 requirements.

6.How does Aetrix verify that IPG20N04S418AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPG20N04S418AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG20N04S418AATMA1 meets industry standards.

7.What is the process for return or replacement of IPG20N04S418AATMA1?

All IPG20N04S418AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPG20N04S418AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG20N04S418AATMA1 part is unused and in its original packaging.

Return procedure for IPG20N04S418AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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