Infineon Technologies IPG20N04S4L07AATMA1

Overview

IPG20N04S4L07AATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 7.2 mΩ R_DS(on) at V_GS = 10 V and I_D = 17 A, and qualified to AEC-Q101 for automotive power switching applications including motor control and DC-DC converters.

For engineers reviewing the IPG20N04S4L07AATMA1 datasheet, IPG20N04S4L07AATMA1 pinout, IPG20N04S4L07AATMA1 application, or IPG20N04S4L07AATMA1 equivalent, key selection criteria include its 2.3 K/W R_thJC, 100% avalanche-tested ruggedness, 175°C operating temperature, and dual-channel layout enabling compact half-bridge or synchronous rectifier designs.

Technical Context

This OptiMOS™-T2 device integrates two identical N-channel MOSFETs in a single PG-TDSON-8 package with shared drain terminals (pins 1–3 and 5–7), enabling high-density dual-switch configurations. Its logic-level gate threshold (1.2–2.2 V) ensures full enhancement with 3.3 V or 5 V microcontroller drive.

Thermal performance is defined by a low 2.3 K/W junction-to-case resistance and validated 100% single-pulse avalanche testing at 230 mJ (I_D = 10 A). Dynamic parameters include C_iss = 3060–3980 pF and Q_g = 39–50 nC, supporting efficient 100 kHz+ switching in automotive DC-DC and motor gate drivers.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (exposed drain pad, 5 mm × 6 mm footprint, MSL1 rated to 260 °C peak reflow).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IRF7341PBF, IPG20N04S4L07AATMA1 delivers 43% lower conduction loss and certified automotive reliability, while the IPG20N04S4L07ATMA1 variant offers identical performance in alternate packaging-making both viable depending on logistics and qualification needs.

Availability

IPG20N04S4L07AATMA1 is available at Aetrix Electronics and suitable for automotive motor control, onboard charger DC-DC stages, and electric power steering driver modules requiring stable component supply across extended product lifecycles.

Supply support for IPG20N04S4L07AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor drive applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum continuous drain current per channel at 100°C case temperature?

The IPG20N04S4L07AATMA1 supports 20 A continuous drain current per channel at T_C = 100 °C with V_GS = 10 V, limited by bondwire capacity-not thermal constraints-due to its 2.3 K/W R_thJC and 175°C T_j rating. Derating is unnecessary up to this temperature point.

Is the exposed thermal pad electrically isolated or connected to the drain terminals?

The exposed pad is electrically connected to both drain terminals (pins 1–3 and 5–7) and must be soldered to a PCB copper pour tied to the system's high-side power rail. It serves as the primary thermal and electrical return path, not an isolated heatsink interface.

Does this part support synchronous rectification in LLC resonant converters?

Yes-its 7.2 mΩ R_DS(on) at 10 V gate drive, 39–50 nC total gate charge, and 36 ns reverse recovery time (t_rr) make it suitable for secondary-side synchronous rectification in 100–300 kHz LLC converters, delivering >2% efficiency gain over Schottky diodes at 15 A output.

How does the dual-channel architecture affect PCB layout compared to discrete single-channel MOSFETs?

The dual-channel PG-TDSON-8 layout reduces board area by ~40% versus two discrete SO-8 devices, but requires careful separation of drain loops to avoid cross-talk. Independent source pins (4 and 8) enable Kelvin sensing or separate current monitoring paths without shared source impedance.