Infineon Technologies IPG20N04S4L07ATMA1

Overview

IPG20N04S4L07ATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 7.2 mΩ R_DS(on) at 10 V_GS, and 20 A continuous drain current per channel. It is AEC-Q101 qualified, supports 175 °C operation, and is fully avalanche tested-designed for automotive body control modules and 12 V DC-DC synchronous rectification.

For engineers reviewing the IPG20N04S4L07ATMA1 datasheet, IPG20N04S4L07ATMA1 pinout, IPG20N04S4L07ATMA1 application, or IPG20N04S4L07ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), low R_DS(on) at 4.5 V_GS (8.0–9.2 mΩ), integrated Schottky-like body diode performance (V_SD = 0.9–1.3 V), and MSL1 reflow capability up to 260 °C.

Technical Context

This dual N-channel MOSFET uses Infineon's OptiMOS™-T2 silicon technology optimized for low gate charge (Q_g = 39–50 nC) and fast switching (t_r = 4 ns, t_f = 25 ns), enabling high-efficiency synchronous buck converters in automotive ADAS power supplies. Its thermal resistance R_thJC = 2.3 K/W allows sustained 20 A conduction with minimal junction-to-case temperature rise.

The device integrates a robust body diode with t_rr = 36 ns and Q_rr = 34 nC, supporting hard-switched topologies without external freewheeling diodes. Gate plateau voltage is fixed at 2.7 V, ensuring stable turn-on behavior under varying load and temperature conditions (–55 to +175 °C).

Key Specifications

Pinout & Package

IPG20N04S4L07ATMA1 is housed in a thermally enhanced PG-TDSON-8 (3.3 × 3.3 mm) leadless surface-mount package with exposed drain pad for low-inductance, high-current PCB routing and efficient heat dissipation via bottom-side copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with BSC014N04LS and IPB180N04S4H02, IPG20N04S4L07ATMA1 uniquely delivers dual-channel logic-level operation in a compact surface-mount package with automotive-grade reliability-making it optimal for integrated load switching where gate drive simplicity, footprint, and AEC-Q101 compliance are jointly essential.

Availability

IPG20N04S4L07ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, electric power steering subsystems, and adaptive LED lighting requiring stable component supply across multi-year production cycles.

Supply support for IPG20N04S4L07ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-current, logic-level switching in automotive 12 V systems where thermal robustness, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPG20N04S4L07ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. For reliable logic-level drive, V_GS should be maintained between 4.5 V (for guaranteed R_DS(on) ≤ 9.2 mΩ) and 10 V (for minimum R_DS(on) = 7.2 mΩ). Transient overshoot must be clamped using Zener diodes if driving from unregulated sources.

Does IPG20N04S4L07ATMA1 support parallel operation of both channels?

Yes-both channels share common drain connections and are electrically isolated at source and gate. They can be paralleled to deliver up to 40 A continuous current with matched thermal coupling. However, individual gate resistors (≤10 Ω) and symmetrical PCB layout are required to ensure current sharing within ±10% across temperature and process variation.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode is rated for 20 A continuous forward current and exhibits V_SD = 0.9–1.3 V at 17 A and 25 °C. Its 36 ns reverse recovery time and 34 nC Q_rr make it suitable for synchronous rectification in buck converters up to 500 kHz, provided gate timing avoids shoot-through during dead-time transitions.

How does the 175 °C operating temperature affect PCB layout recommendations?

The 175 °C rating requires thermal vias under the exposed drain pad (minimum 9×0.3 mm vias to inner ground plane) and ≥6 cm² of 70 µm copper on the bottom layer. FR4 PCBs must use high-Tg (≥170 °C) material, and adjacent components must be rated for >150 °C to avoid derating or solder joint fatigue in under-hood environments.