Infineon Technologies IPG20N04S4L08AATMA1

Overview

IPG20N04S4L08AATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 8.2 mΩ R_DS(on) at 10 V_GS, and 20 A continuous drain current per channel. It is AEC-Q101 qualified, supports 175 °C operation, and is fully avalanche tested-designed for automotive body control modules, DC-DC converters, and high-efficiency motor drivers.

For engineers reviewing the IPG20N04S4L08AATMA1 datasheet, IPG20N04S4L08AATMA1 pinout, IPG20N04S4L08AATMA1 application, or IPG20N04S4L08AATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), low R_DS(on) at 4.5 V_GS (9.2–10.9 mΩ), integrated reverse diode with t_rr = 34 ns, and MSL1 reflow capability up to 260 °C.

Technical Context

This dual N-channel MOSFET features symmetric channel layout in a thermally enhanced PG-TDSON-8 package with exposed drain pad. Its gate threshold voltage (1.2–2.2 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

Dynamic parameters include C_iss = 2350–3050 pF, Q_g = 30–39 nC, and fast switching with t_d(on) = 7 ns and t_f = 20 ns under standard test conditions (V_DD = 20 V, R_G = 11 Ω). The integrated Schottky-like body diode delivers V_SD = 0.9–1.3 V at 17 A and t_rr = 34 ns, supporting synchronous rectification and freewheeling in half-bridge topologies.

Key Specifications

Pinout & Package

IPG20N04S4L08AATMA1 uses the PG-TDSON-8 (also known as TDSON-8 or TSDSON-8) surface-mount package with an exposed drain pad on the bottom side for thermal and electrical connection. Pin numbering follows JEDEC MS-012AC standard, with pins 1–4 assigned to Channel 1 and pins 5–8 to Channel 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IPG20N04S4L08AATMA1, the IPG20N04S4L07AATMA1 offers marginally better conduction efficiency but identical thermal and reliability specs, while STP20NF04L trades performance, qualification, and packaging for legacy through-hole compatibility and lower unit cost in non-automotive contexts.

Availability

IPG20N04S4L08AATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, BLDC motor gate driver stages, and redundant power supply switching requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for IPG20N04S4L08AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.

This device belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12 V/24 V/48 V systems where logic-level drive, thermal robustness, and AEC-Q101 compliance are mandatory.

FAQ

Is IPG20N04S4L08AATMA1 suitable for synchronous rectification in a 48 V-to-12 V DC-DC converter?

Yes. With R_DS(on) = 8.2 mΩ at 10 V_GS, t_rr = 34 ns, and V_SD = 0.9–1.3 V at 17 A, it delivers low conduction and switching losses in synchronous rectifier topologies operating up to 500 kHz. Its dual-channel structure also supports interleaved designs.

What is the maximum allowable gate-source voltage for safe operation?

The absolute maximum V_GS is ±16 V. Operation beyond this risks irreversible gate oxide breakdown. For reliable 3.3 V or 5 V MCU interface, a series gate resistor (e.g., 10–47 Ω) and optional Zener clamp (e.g., 12 V) are recommended to suppress overshoot during fast switching.

Does this part require external freewheeling diodes when used in half-bridge motor drive applications?

No. The integrated body diode has t_rr = 34 ns and Q_rr = 30 nC, enabling effective freewheeling during dead-time. However, for high-frequency (>100 kHz) or high-di/dt applications, external SiC Schottky diodes may further reduce losses and EMI.

How does the PG-TDSON-8 package affect PCB layout and thermal design?

The exposed drain pad requires a minimum 6 cm² copper pour on the bottom layer, connected via ≥6 thermal vias (0.3 mm diameter) to internal ground planes. Trace width for drain paths should exceed 3 mm to handle 20 A/channel; keep gate traces short and shielded from drain switching noise to prevent false triggering.