Infineon Technologies IPG20N04S4L08ATMA1

Overview

IPG20N04S4L08ATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET with 40 V V_DS, 8.2 mΩ R_DS(on) at 10 V_GS, and 20 A continuous drain current per channel. It is AEC-Q101 qualified, rated for 175 °C operation, and housed in a PG-TDSON-8 package-designed for automotive body electronics, DC-DC converters, and high-efficiency motor control.

For engineers reviewing the IPG20N04S4L08ATMA1 datasheet, IPG20N04S4L08ATMA1 pinout, IPG20N04S4L08ATMA1 application, or IPG20N04S4L08ATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 100% avalanche-tested ruggedness, low 2.8 K/W R_thJC, and integrated body diode with 34 ns t_rr and 30 nC Q_rr.

Technical Context

This OptiMOS™-T2 power transistor uses trench-based silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its dual-channel layout enables half-bridge or synchronous rectifier configurations without external paralleling, and the 2.8 K/W junction-to-case thermal resistance supports high-power density PCB layouts with minimal copper area.

The device features a gate threshold voltage of 1.2–2.2 V (typ. 1.7 V), enabling robust turn-on with standard microcontroller GPIOs, and exhibits 30–39 nC total gate charge with a 2.8 V gate plateau-critical for predictable timing in PWM-driven loads like solenoids and LED drivers.

Key Specifications

Pinout & Package

IPG20N04S4L08ATMA1 is packaged in PG-TDSON-8 (3.3 mm × 3.3 mm × 0.9 mm), a thermally enhanced leadless surface-mount package with exposed drain pad on bottom side for optimal heat transfer. The eight terminals are arranged in dual-channel symmetric layout: pins 1–4 serve Channel 1, pins 5–8 serve Channel 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IPG20N04S4L12ATMA1, this part delivers 33% lower R_DS(on) for improved efficiency in thermally constrained designs; versus IRF7341PBF, it adds AEC-Q101 compliance, 2.2× better thermal resistance, and 65% lower on-resistance-making it the only qualified option for production automotive systems.

Availability

IPG20N04S4L08ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and brushed DC motor drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for IPG20N04S4L08ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power stages-including body electronics, lighting, and auxiliary motor control-where logic-level drive and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPG20N04S4L08ATMA1?

The absolute maximum gate-source voltage is ±16 V. Operation beyond this range risks permanent gate oxide damage. For reliable long-term performance, gate drive circuits should limit V_GS to ≤12 V during transient conditions, especially in noisy automotive environments where coupled spikes may exceed nominal levels.

Can IPG20N04S4L08ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing between paralleled devices. However, matched gate drive routing and symmetrical PCB layout are essential to avoid dynamic imbalance; gate resistors ≥10 Ω per channel are recommended to dampen oscillation.

Does the device include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic body diode with V_SD = 0.9–1.3 V at 17 A and 25 °C, t_rr = 34 ns, and Q_rr = 30 nC. These values are measured under V_R = 20 V, I_F = I_S, and di_F/dt = 100 A/µs, making it suitable for synchronous rectification in high-frequency DC-DC converters.

Is thermal derating required above 100 °C case temperature?

No continuous current derating is specified above 100 °C case temperature-the datasheet confirms I_D = 20 A remains valid up to T_C = 100 °C. Beyond that, current must be reduced per the I_D = f(T_C) curve on page 4; at T_C = 125 °C, maximum continuous current drops to ~16 A due to thermal saturation of the bondwire limit.