Infineon Technologies IPG20N04S4L11ATMA1

Overview

IPG20N04S4L11ATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 20 A continuous drain current (T_C = 25 °C), and 11.6 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, supports 175 °C operation, and is 100% avalanche tested - deployed in automotive body control modules and 12 V DC-DC synchronous rectification.

For engineers reviewing the IPG20N04S4L11ATMA1 datasheet, IPG20N04S4L11ATMA1 pinout, IPG20N04S4L11ATMA1 application, or IPG20N04S4L11ATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.2 V), low R_DS(on) at 4.5 V (13.1–15.5 mΩ), thermal resistance R_thJC = 3.7 K/W, and integrated avalanche ruggedness (E_AS = 80 mJ).

Technical Context

This dual N-channel MOSFET uses Infineon's OptiMOS™-T2 silicon process optimized for low gate charge (Q_g = 20–26 nC) and fast switching (t_r = 2 ns, t_f = 15 ns). Its symmetric channel layout enables parallel operation without external balancing components.

The device integrates a robust body diode with t_rr = 32 ns and Q_rr = 25 nC, supporting high-frequency synchronous buck topologies. Thermal design is enabled by direct-drain thermal path in PG-TDSON-8 and specified R_thJC = 3.7 K/W under controlled PCB mounting conditions.

Key Specifications

Pinout & Package

IPG20N04S4L11ATMA1 is housed in PG-TDSON-8 (exposed drain pad), a surface-mount power package with thermal performance optimized for high-current automotive applications. The exposed drain pad must be soldered to ≥6 cm² of 70 µm copper on FR4 PCB for rated R_thJC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with IPB20N04S4L12ATMA1, the IPG20N04S4L11ATMA1 offers superior thermal performance (R_thJC 3.7 vs. 4.5 K/W) and smaller footprint; versus STL220N4LF8AG, it delivers system-level simplification via dual-channel integration and lower total gate charge.

Availability

IPG20N04S4L11ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and industrial PLC output stages requiring stable component supply across extended production lifecycles.

Supply support for IPG20N04S4L11ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949 and AEC standards.

This part belongs to the OptiMOS™-T2 power transistor family, engineered specifically for high-efficiency, high-reliability 12–24 V automotive and industrial switching applications where logic-level drive, avalanche ruggedness, and thermal performance are critical.

FAQ

What is the maximum allowable gate-source voltage for IPG20N04S4L11ATMA1?

The absolute maximum V_GS is ±16 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to ≤12 V with transient suppression, especially in automotive environments with load dump events.

Does IPG20N04S4L11ATMA1 support paralleling of its two channels for higher current?

Yes - both channels share identical die characteristics (matching V_GS(th), R_DS(on), and dynamic parameters), enabling current sharing without external balancing resistors. Layout symmetry and matched gate trace lengths are required to ensure equal switching timing.

Is the body diode in IPG20N04S4L11ATMA1 suitable for reverse recovery in hard-switched topologies?

Yes - the body diode is fully characterized with t_rr = 32 ns and Q_rr = 25 nC at T_j = 25 °C. These values support reliable operation in 300–500 kHz synchronous rectifiers, though soft-switching or ZVS is recommended above 500 kHz to minimize diode-related losses.

How is thermal performance affected if the exposed drain pad is not fully soldered to the PCB?

Unsoldered or partially soldered drain pad increases R_thJC significantly - measured data shows >2× degradation in thermal resistance with <50% pad coverage. Full soldering to ≥6 cm² of 70 µm copper is mandatory to achieve the rated 3.7 K/W and prevent thermal runaway at 20 A.