Infineon Technologies IPG20N04S4L18AATMA1

Overview

IPG20N04S4L18AATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 40 V V_DS, 18 mΩ R_DS(on) at V_GS = 10 V and I_D = 17 A, with AEC-Q101 qualification and 175 °C maximum junction temperature. It delivers high-current switching in automotive body control modules, DC-DC converters, and motor drivers requiring robust avalanche capability and low gate charge.

For engineers reviewing the IPG20N04S4L18AATMA1 datasheet, IPG20N04S4L18AATMA1 pinout, IPG20N04S4L18AATMA1 application, or IPG20N04S4L18AATMA1 equivalent, key selection criteria include its 10.5–15.0 nC total gate charge, 21.4–26.0 mΩ R_DS(on) at 4.5 V drive, 100% avalanche-tested ruggedness, and MSL1 reflow compatibility up to 260 °C - critical for automotive PCB assembly and thermally constrained power stages.

Technical Context

This OptiMOS™-T2 device integrates two identical N-channel MOSFETs in a single thermally optimized PG-TDSON-8 package with exposed drain pad for low R_thJC (5.6 K/W). Its logic-level gate threshold (1.2–2.2 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The device features fast switching dynamics (t_d(on) = 2.4 ns, t_d(off) = 12.7 ns), low Crss (7–16 pF), and integrated Schottky-like body diode with t_rr = 25 ns and Q_rr = 15 nC - enabling high-frequency synchronous rectification and reduced switching losses in buck and half-bridge topologies.

Key Specifications

Pinout & Package

IPG20N04S4L18AATMA1 uses the PG-TDSON-8 (exposed drain) surface-mount package with 0.65 mm pitch and thermal pad on underside for PCB heat dissipation. Pin numbering follows standard dual-channel layout with shared source terminals and independent gate/drain connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IRF7341PBF, IPG20N04S4L18AATMA1 delivers 38 % lower R_DS(on), 45 % less gate charge, and full automotive qualification - making it superior for thermally demanding, safety-aware designs where long-term reliability is mandatory.

Availability

IPG20N04S4L18AATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, 48 V DC-DC conversion, and industrial motor control applications requiring stable component supply, AEC-Q101 compliance, and extended temperature operation.

Supply support for IPG20N04S4L18AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial 12–48 V systems where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum allowable gate-source voltage for IPG20N04S4L18AATMA1?

The absolute maximum V_GS is ±16 V per the datasheet. Operation beyond this risks irreversible gate oxide damage. Recommended drive range is 0–10 V for full enhancement; gate drive circuits must include clamping or zener protection to prevent overshoot during fast switching transitions.

Does IPG20N04S4L18AATMA1 support paralleling of channels for higher current?

Yes - both channels share identical electrical characteristics (R_DS(on), V_GS(th), Q_g) and thermal coupling via the common package base. For safe paralleling, ensure matched gate drive impedance, symmetrical PCB layout, and current-sharing resistors if operating near thermal limits.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode is rated for 20 A continuous forward current (I_S) and 80 A pulsed (I_S,pulse). Its 25 ns t_rr and 15 nC Q_rr make it viable for high-frequency synchronous rectification in buck converters up to 1 MHz, provided layout minimizes parasitic inductance.

How does the PG-TDSON-8 package affect thermal performance in real-world PCB layouts?

With a 6 cm² copper area on FR4 PCB, R_thJA is 60 K/W. The exposed drain pad enables direct thermal connection to inner-layer copper planes, achieving R_thJC = 5.6 K/W - meaning 26 W power dissipation yields only ~146 °C junction rise above case temperature at steady state.