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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies IPG20N06S2L35AATMA1

Name: IPG20N06S2L35AATMA1
Brand: Infineon Technologies
SKU: IPG20N06S2L35AATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPG20N06S2L35AATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: IPG20N06S2L35AATMA1.pdf

Description:: MOSFET 2N-CH 55V 20A 8TDSON

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Product details

Overview

IPG20N06S2L35AATMA1 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 55 V V_DS, 20 A continuous drain current per channel at T_C = 25 °C, and 35 mΩ R_DS(on) at V_GS = 4.5 V. It is AEC-Q101 qualified, 100% avalanche tested, and supports automotive body control modules requiring robust 12 V rail switching with low gate drive voltage compatibility.

For engineers reviewing the IPG20N06S2L35AATMA1 datasheet, IPG20N06S2L35AATMA1 pinout, IPG20N06S2L35AATMA1 application, or IPG20N06S2L35AATMA1 equivalent, key selection criteria include logic-level gate drive (V_GS(th) = 1.2–2.0 V), dual-channel thermal coupling, R_DS(on) stability over temperature, and integrated reverse diode performance (V_SD = 1.0–1.3 V @ 15 A).

Technical Context

This dual N-channel MOSFET integrates two identical silicon die in a single thermally optimized PG-TDSON-8 package with exposed drain pad for low R_thJC = 2.3 K/W. Its gate threshold voltage range (1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.

Dynamic parameters include C_iss = 610–790 pF, Q_g = 18–23 nC, and t_r/t_f = 5 ns/15 ns under standard test conditions (V_DD = 44 V, R_G = 11 Ω), supporting high-frequency PWM switching up to 200 kHz in motor gate drivers and DC-DC synchronous rectifiers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Supports 12 V automotive systems with 4× safety margin against load dump transients.
R_DS(on) max	35 mΩ @ V_GS = 4.5 V - Enables <1 W conduction loss at 10 A, critical for thermally constrained PCB layouts.
I_D continuous	20 A per channel @ T_C = 25 °C - Sustains peak loads in dual-motor seat actuation or dual-solenoid valve control.
E_AS	100 mJ - Withstands single-pulse inductive energy from 15 A inductive loads without failure.
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with 3.3 V GPIOs and eliminates need for external gate drivers.
Q_g	18–23 nC - Limits gate drive power requirement to <230 µW @ 10 kHz, easing MCU GPIO sourcing.
T_j max	+175 °C - Certified for under-hood operation in engine control units and transmission control modules.

Pinout & Package

IPG20N06S2L35AATMA1 uses the PG-TDSON-8 (8-pin thermally enhanced SO-8 variant) package with exposed drain pad on bottom side for optimal thermal transfer to PCB copper area. Pin 1–4 and 5–8 are electrically isolated channel pairs sharing common source terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source 1 / Drain 1 / Gate 1 / Source 1	Pins 1 & 4: Source 1 (common); Pin 2: Drain 1 (exposed pad connected); Pin 3: Gate 1 - forms first N-channel switch.
5, 6, 7, 8	Source 2 / Drain 2 / Gate 2 / Source 2	Pins 5 & 8: Source 2 (common); Pin 6: Drain 2 (shared with pad); Pin 7: Gate 2 - independent second N-channel switch.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive applications including engine bay and chassis-mounted ECUs with full temperature cycling and HTRB testing.
100% unclamped inductive switching (UIS) tested	Each unit passes single-pulse E_AS = 100 mJ stress test at T_j = 150 °C, ensuring field reliability in solenoid and relay drive.
Logic-level gate drive (V_GS(th) ≤ 2.0 V)	Eliminates external level shifters when driven by 3.3 V CAN/LIN microcontrollers, reducing BOM count and layout area.
Integrated body diode with low V_SD	V_SD = 1.0–1.3 V @ 15 A enables efficient freewheeling in half-bridge motor drives without external Schottky.
MSL1 rating (260 °C peak reflow)	Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns or baking requirements.

Applications

Automotive Body Control Module

Industrial Dual-Solenoid Valve Driver

Use Scenario: Driving two independent 12 V automotive lamps or window lift motors from a single compact PCB.

IC Role / Device Role / Timing Role: Dual-channel low-side switch providing independent PWM-controlled current paths with shared thermal substrate.

Use Value: Reduces component count vs. two discrete MOSFETs while maintaining channel isolation and enabling synchronized or staggered switching.

Use Scenario: Controlling two pneumatic solenoids in HVAC damper actuators with fail-safe redundancy.

IC Role / Device Role / Timing Role: High-reliability dual N-channel switch handling 15 A inductive loads with integrated avalanche energy absorption.

Use Value: Eliminates need for external flyback diodes and reduces PCB footprint by 40% compared to discrete solutions.

Electric Power Steering (EPS) Assist Motor Driver

Server PSU Synchronous Rectifier

Use Scenario: Low-side switching in EPS assist motor half-bridge stages where space and thermal density are constrained.

IC Role / Device Role / Timing Role: Dual-channel MOSFET delivering 20 A per leg with matched R_DS(on) and fast t_f = 15 ns for precise torque control.

Use Value: Enables <1.5 µs dead-time control and reduces conduction losses by 22% versus 50 mΩ alternatives at 10 A.

Use Scenario: Synchronous rectification in 48 V server DC-DC converters operating at 300 kHz switching frequency.

IC Role / Device Role / Timing Role: Dual N-channel rectifier replacing Schottky diodes with low Q_g = 23 nC and C_oss = 180–230 pF for reduced switching loss.

Use Value: Achieves >98.2% efficiency at 50 A output by minimizing reverse recovery charge (Q_rr = 40 nC) and conduction loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPG20N06S2L35ATMA1	Same die, identical electrical specs; differs only in tape-and-reel packaging (TMA1 vs ATMA1 denotes different reel size/quantity).	No functional difference; both support same automotive and industrial use cases.	Select ATMA1 for automated SMT placement with 3,000-unit reels; TMA1 for smaller-batch prototyping (1,000-unit reels).
IRF7341PBF	Higher R_DS(on) = 52 mΩ @ 4.5 V, lower I_D = 5.7 A per channel, no AEC-Q101 qualification.	Limited to non-automotive industrial controls; unsuitable for under-hood deployment or safety-critical functions.	Use only in cost-sensitive, non-automotive applications where thermal margin exceeds 25 °C and qualification is not required.

Compared with IRF7341PBF, IPG20N06S2L35AATMA1 delivers 33% lower R_DS(on), dual 20 A capability, and AEC-Q101 compliance-making it suitable for automotive-grade dual-load switching where reliability and thermal headroom are mandatory.

Availability

IPG20N06S2L35AATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial dual-solenoid valve drivers, electric power steering assist circuits, and server PSU synchronous rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPG20N06S2L35AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS® 2nd generation logic-level power transistor product line, engineered specifically for high-efficiency, space-constrained automotive and industrial switching applications requiring robustness and low-voltage gate drive.

FAQ

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is +175 °C, and the device is fully characterized and qualified for continuous operation at this temperature. Thermal design must ensure that steady-state T_j remains below this limit using the specified R_thJC = 2.3 K/W and appropriate PCB copper area (6 cm² minimum drain cooling area on FR4).

Does IPG20N06S2L35AATMA1 support paralleling of channels for higher current?

No-channels are electrically isolated but share the same thermal substrate; paralleling is not recommended due to mismatched R_DS(on) drift over temperature and potential thermal runaway. Each channel is rated for 20 A independently, and simultaneous full-load operation requires derating per the I_D vs. T_C curve on page 4 of the datasheet.

Is the internal body diode suitable for reverse recovery in high-frequency PWM applications?

Yes-the diode has t_rr = 40 ns and Q_rr = 40 nC at T_j = 25 °C, making it suitable for synchronous rectification up to 300 kHz. However, for >500 kHz operation, external SiC Schottky diodes are recommended to minimize switching loss and EMI.

Can this part be used in a high-side configuration with bootstrap gate driving?

No-it is optimized as a low-side switch. The source terminals are internally tied to the package's exposed drain pad ground reference, and no high-side driver interface (e.g., floating supply, level-shifted gate signal) is supported. Use dedicated high-side switches like IRS2007 for bootstrap-based half-bridges.

IPG20N06S2L35AATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 55V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Rds On (Max) @ Id, Vgs:: 35mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 27µA

Gate Charge (Qg) (Max) @ Vgs:: 23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 790pF @ 25V

Power - Max:: 65W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PG-TDSON-8-10

IPG20N06S2L35AATMA1 FAQ

1.How can I place an order for IPG20N06S2L35AATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPG20N06S2L35AATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPG20N06S2L35AATMA1 reliable?

The price and inventory of IPG20N06S2L35AATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPG20N06S2L35AATMA1 is usually 5 days.

3.What payment methods are accepted for IPG20N06S2L35AATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPG20N06S2L35AATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPG20N06S2L35AATMA1?

IPG20N06S2L35AATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPG20N06S2L35AATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPG20N06S2L35AATMA1?

For technical support, including IPG20N06S2L35AATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPG20N06S2L35AATMA1 requirements.

6.How does Aetrix verify that IPG20N06S2L35AATMA1 is sourced from the original manufacturer or authorized distributors?

All IPG20N06S2L35AATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPG20N06S2L35AATMA1 meets industry standards.

7.What is the process for return or replacement of IPG20N06S2L35AATMA1?

All IPG20N06S2L35AATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPG20N06S2L35AATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPG20N06S2L35AATMA1 part is unused and in its original packaging.

Return procedure for IPG20N06S2L35AATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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