Infineon Technologies IPG20N06S3L-35

Overview

IPG20N06S3L-35 from Infineon Technologies is a dual-channel N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8-4 package, rated for 55 V V_DS, 20 A continuous drain current (T_C = 25 °C), and 35 mΩ R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, 100% avalanche tested, and supports automotive motor control and DC-DC converter primary-side switching.

For engineers reviewing the IPG20N06S3L-35 datasheet, IPG20N06S3L-35 pinout, IPG20N06S3L-35 application, or IPG20N06S3L-35 equivalent, key selection criteria include its 35 mΩ on-resistance at 10 V gate drive, 175 °C maximum junction temperature, dual-channel layout for half-bridge integration, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS®-T device implements two independent N-channel power transistors in a single thermally optimized TDSON-8 package with exposed drain pad. Its logic-level gate threshold (1.2–2.2 V) enables direct microcontroller drive without level-shifting, while the 5 K/W junction-to-case thermal resistance supports high-power density designs.

The MOSFET features low gate charge (Q_g = 18–23 nC), fast switching (t_r = 5 ns, t_f = 9 ns), and integrated body diode with 10 ns reverse recovery time and 10 nC Q_rr, enabling efficient synchronous rectification and hard-switched topologies.

Key Specifications

Pinout & Package

PG-TDSON-8-4 is a surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad (pins 1–4 and 5–8 are source/drain pairs per channel). The package meets MSL1 and supports 260 °C peak reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IPG20N06S3L-25 and IRF7341PBF, the IPG20N06S3L-35 delivers optimal balance of low R_DS(on), fast switching, and automotive-grade ruggedness-making it preferred for space-constrained, high-reliability 24 V–48 V systems where both efficiency and fault tolerance are critical.

Availability

IPG20N06S3L-35 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC-DC converters, on-board chargers, and BLDC motor inverters requiring stable component supply across multi-year production cycles.

Supply support for IPG20N06S3L-35 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T product line, engineered specifically for high-efficiency, high-reliability automotive and industrial power conversion where logic-level drive, thermal robustness, and AEC-Q101 compliance are mandatory.

FAQ

Is IPG20N06S3L-35 suitable for 48 V battery systems?

Yes. With a 55 V V_DS rating and 175 °C maximum junction temperature, it supports 48 V nominal systems including transient overvoltage conditions up to 50 V. Its 35 mΩ R_DS(on) limits conduction loss to under 2 W at 8 A, making it appropriate for auxiliary power modules and DC-DC stages in light EVs and telecom equipment.

What is the recommended PCB layout for thermal performance?

Use a 40 mm × 40 mm FR4 board with ≥6 cm² of 70 µm-thick copper connected to the exposed drain pad on one layer. Maintain vertical orientation in still air. Thermal vias under the pad (≥12×0.3 mm diameter) to inner ground planes further reduce R_thJA to ~45 K/W, enabling 15 A continuous operation at T_C = 100 °C.

Does this MOSFET require a gate resistor for driving with an MCU?

A series gate resistor (10–22 Ω) is recommended to damp ringing and limit peak gate current during fast transitions. While the device's 1.7 V typical V_GS(th) allows direct 3.3 V MCU drive, the 23 nC Q_g demands sufficient drive strength; weak GPIOs may cause slow turn-on and increased switching loss without proper buffering.

Can both channels be paralleled for higher current handling?

No. The two channels share a common drain pad but have independent source terminals; paralleling would create unequal current sharing due to mismatched R_DS(on) and thermal coupling. They are intended for half-bridge or dual-load configurations-not parallel operation. For higher current, use a single-channel part with lower R_DS(on) like IPG26N06S3L-17.