Infineon Technologies IPG20N06S415AATMA1

Overview

IPG20N06S415AATMA1 from Infineon Technologies is a dual-channel AEC-Q101-qualified N-channel enhancement-mode MOSFET in PG-TDSON-8-10 package, rated for 60 V V_DS, 20 A continuous drain current per channel at T_C = 25 °C, and 15.5 mΩ max R_DS(on) at V_GS = 10 V. It delivers robust avalanche performance (90 mJ single-pulse E_AS) and operates up to 175 °C junction temperature-used in automotive DC-DC converters and motor control half-bridges.

For engineers reviewing the IPG20N06S415AATMA1 datasheet, IPG20N06S415AATMA1 pinout, IPG20N06S415AATMA1 application, or IPG20N06S415AATMA1 equivalent, key selection criteria include its dual-channel layout, 3 K/W R_thJC, 100% avalanche-tested reliability, AOI-compatibility, and compliance with automotive thermal and qualification standards.

Technical Context

This dual N-channel MOSFET integrates two independent power switches sharing a common source terminal in a thermally optimized 8-pin TDSON package. Its gate threshold voltage (2.0–4.0 V) enables direct drive from standard 3.3 V/5 V logic controllers, while low Crss (19–38 pF) and fast switching (t_r = 2 ns, t_f = 9 ns) support high-frequency PWM operation in synchronous rectification stages.

The device features integrated body diodes with 0.95–1.3 V forward voltage at 17 A and 35 ns reverse recovery time, enabling efficient freewheeling in inductive loads. Its 100% single-pulse avalanche testing and 175 °C operating temperature rating ensure functional safety in automotive under-hood applications where thermal transients are frequent.

Key Specifications

Pinout & Package

Package: PG-TDSON-8-10 (8-pin exposed-drain thermal pad, 5 mm × 6 mm footprint, MSL1 rated to 260 °C peak reflow).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.

Compared with IPG20N06S415AATMA1, the logic-level IPG20N06S4L15AATMA1 reduces gate drive overhead but sacrifices noise immunity, while IRF7341TRPBF offers lower cost at the expense of automotive qualification, thermal capability, and ruggedness-making it unsuitable for safety-critical vehicle subsystems.

Availability

IPG20N06S415AATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering modules, and on-board charger auxiliary supplies requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPG20N06S415AATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certifications aligned to IATF 16949.

This part belongs to the OptiMOS™-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability automotive power conversion and motor control applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPG20N06S415AATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to 10–15 V during normal switching, with transient overshoots clamped below 18 V using external Zener diodes or gate drivers with built-in overvoltage protection.

Can IPG20N06S415AATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherent current sharing between paralleled devices. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are mandatory to prevent oscillation and unequal dynamic current distribution during switching transitions.

Is the exposed thermal pad electrically connected to any internal node?

Yes-the exposed drain pad is electrically connected to both Drain 1 and Drain 2 terminals. It must be soldered to a large copper pour tied to the system ground plane or heatsink, and must not be left floating or connected to any other potential. Thermal vias beneath the pad are recommended for optimal heat dissipation.

Does IPG20N06S415AATMA1 support pulse-width modulation at frequencies above 500 kHz?

Yes-its 2 ns rise time and 9 ns fall time, combined with low Crss (19–38 pF), support clean switching at 500–1000 kHz in hard-switched topologies. However, gate driver strength must deliver ≥1.5 A peak current to charge/discharge Q_g (22–29 nC) within the required timing window while maintaining controlled dv/dt.